2004 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150C
250
V
V
DGR
T
J
= 25
C to 150C; R
GS
= 1 M
250
V
V
GSM
20
V
I
D25
T
C
= 25
C
82
A
I
D(RMS)
External lead current limit
75
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
250
A
I
AR
T
C
= 25
C
60
A
E
AR
T
C
= 25
C
40
mJ
E
AS
T
C
= 25
C
1.0
J
dv/dt
I
S
I
DM
, di/dt
100 A/s, V
DD
V
DSS
,
10
V/ns
T
J
150C, R
G
= 4
P
D
T
C
= 25
C
500
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-3P
5.5
g
TO-264
10
g
TO-268
5.0
g
G = Gate
D = Drain
S = Source
TAB = Drain
DS99121B(04/04)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
250
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
2.5
5.0
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
25
A
V
GS
= 0 V
T
J
= 125
C
250
A
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
35
m
Pulse test, t
300 s, duty cycle d 2 %
PolarHT
TM
Power MOSFET
IXTQ 82N25P
V
DSS
= 250
V
IXTT 82N25P
I
D25
= 82
A
IXTK 82N25P
R
DS(on)
= 35 m
N-Channel Enhancement Mode
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
PolarHT
TM
DMOS transistors
utilize proprietary designs and
process. US patent is pending.
TO-3P (IXTQ)
G
D
S
(TAB)
TO-268 (IXTT)
G
S
D (TAB)
Preliminary Data Sheet
TO-264 (IXTK)
G
D
S
(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
6,404,065B1 6,162,665
6,534,343
6,583,505
of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
6,259,123B1 6,306,728B1 6,683,344
Symbol
Test Conditions Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
30
52
S
C
iss
4800
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
900
pF
C
rss
210
pF
t
d(on)
29
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 60 A
20
ns
t
d(off)
R
G
= 4
(External)
78
ns
t
f
22
ns
Q
g(on)
142
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
32
nC
Q
gd
74
nC
R
thJC
0.25 K/W
R
thCH
TO-3P
0.21
K/W
TO-264
0.15
K/W
Source-Drain Diode Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
Min.
typ.
Max.
I
S
V
GS
= 0 V
82
A
I
SM
Repetitive
250
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300 s, duty cycle d 2 %
t
rr
I
F
= 25 A
200
ns
-di/dt = 100 A/
s
Q
RM
V
R
= 100 V
2.0
C
IXTK 82N25P IXTQ 82N25P
IXTT 82N25P
TO-268 Outline
TO-3P Outline
TO-264 AA Outline
2004 IXYS All rights reserved
Fig. 2. Extended Output Characteristics
@ 25
C
0
20
40
60
80
100
120
140
160
180
200
0
2
4
6
8
10
12
14
16
18
20
V
DS
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
7V
6V
8V
9V
Fig. 3. Output Characteristics
@ 125
C
0
10
20
30
40
50
60
70
80
90
0
1
2
3
4
5
6
7
8
V
DS
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
9V
8V
5V
6V
7V
Fig. 1. Output Characteristics
@ 25
C
0
10
20
30
40
50
60
70
80
90
0
0.5
1
1.5
2
2.5
3
3.5
4
V
DS
- Volts
I
D
-
A
m
p
e
re
s
V
GS
= 10V
9V
8V
7V
6V
Fig. 4. R
DS(on
)
Norm alized to I
D25
Value
vs. Junction Tem perature
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D
S
(
on)
-
N
o
rm
a
l
i
z
e
d
I
D
= 82A
I
D
= 41A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
10
20
30
40
50
60
70
80
90
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
-
A
m
per
es
Fig. 5. R
DS(on)
Norm alized to
I
D25
Value vs. I
D
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
3.4
3.7
0
20
40
60
80
100 120 140 160 180 200
I
D
- Amperes
R
D
S
(
on)
-
N
o
rm
a
l
i
z
e
d
T
J
= 125C
T
J
= 25C
V
GS
= 10V
IXTK 82N25P IXTQ 82N25P
IXTT 82N25P
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
6,404,065B1 6,162,665
6,534,343
6,583,505
of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
6,259,123B1 6,306,728B1 6,683,344
Fig. 11. Capacitance
100
1000
10000
0
5
10
15
20
25
30
35
40
V
DS
- Volts
C
apac
i
t
anc
e -
p
F
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
15
30
45
60
75
90 105 120 135 150
Q
G
- nanoCoulombs
V
G S
-
V
o
l
t
s
V
DS
= 125V
I
D
= 41A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
10
20
30
40
50
60
70
80
90
100
4
4.5
5
5.5
6
6.5
7
7.5
8
V
GS
- Volts
I
D
-
A
m
p
e
re
s
T
J
= 125C
25C
-40C
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
0
20
40
60
80
100
120
140 160
180
I
D
- Amperes
g
fs
-
S
i
em
ens
T
J
= -40C
25C
125C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
40
80
120
160
200
240
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
- Volts
I
S
-
A
m
per
es
T
J
= 125C
T
J
= 25C
Fig. 12. Forw ard-Bias
Safe Operating Area
1
10
100
1000
10
100
1000
V
DS
- Volts
I
D
-
A
m
per
es
100s
1ms
DC
T
J
= 150C
T
C
= 25C
R
DS(on)
Limit
10ms
25s
IXTK 82N25P IXTQ 82N25P
IXTT 82N25P
2004 IXYS All rights reserved
Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce
0. 01
0. 10
1. 00
1
10
100
1000
Puls e W idth - millis ec onds
R
(th)J
C
-
(C/W)
IXTK 82N25P IXTQ 82N25P
IXTT 82N25P
PDF 
ZIP