2005 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 175C
100
V
V
DGR
T
J
= 25
C to 175C; R
GS
= 1 M
100
V
V
GS
20
V
V
GSM
30
V
I
D25
T
C
= 25
C
133
A
I
D(RMS)
External lead current limit
75
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
400
A
I
AR
T
C
= 25
C
60
A
E
AR
T
C
= 25
C
100
mJ
E
AS
T
C
= 25
C
4
J
dv/dt
I
S
I
DM
, di/dt
100 A/s, V
DD
V
DSS
,
10
V/ns
T
J
150C, R
G
= 4
P
D
T
C
= 25
C
350
W
T
J
-55 ... +175
C
T
JM
175
C
T
stg
-55 ... +150
C
V
ISOL
50/60 Hz, RMS, 1 minute
2500
V~
F
C
Mounting Force
20..120/4.6..20
Nm/lb
Weight
5
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
100
V
V
GS(th)
V
DS
= V
GS
, I
D
= 500
A
3.0
5.0
V
I
GSS
V
GS
=
30 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
25
A
V
GS
= 0 V
T
J
= 150
C
250
A
V
GS
= 0 V
T
J
= 175
C
1000
A
R
DS(on)
V
GS
= 10 V, I
D
= 60 A
8.0
m
V
GS
= 15 V, I
D
= 400A
5.5
m
DS99365(06/05)
Polar
TM
HiPerFET
Power MOSFET
Electrically Isolated Tab
IXTR 200N10P
Advanced Technical Information
N-Channel Enhancement Mode
Fast Recovery Diode, Avavanche Rated
V
DSS
= 100 V
I
D25
= 133 A
R
DS(on)
= 8 m
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
Avalanche voltage rated
Fast recovery intrinsic diode
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
Easy assembly
Space savings
High power density
ISOPLUS 247
TM
G = Gate
D = Drain
S = Source
E153432
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTR 200N10P
Symbol
Test Conditions Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 100 A, Note 1
60
97
S
C
iss
7600
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
2900
pF
C
rss
860
pF
t
d(on)
30
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 60 A
35
ns
t
d(off)
R
G
= 3.3
(External)
150
ns
t
f
90
ns
Q
g(on)
240
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 100 A
50
nC
Q
gd
135
nC
R
thJC
.42 K/W
R
thCK
0.15
K/W
Source-Drain Diode Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
Min.
typ.
Max.
I
S
V
GS
= 0 V
200
A
I
SM
Repetitive
400
A
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1
1.5
V
t
rr
I
F
= 25 A, dI/dt = 100 A/
s
100
140 ns
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
ISOPLUS 247 OUTLINE
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.83
5.21
.190 .205
A
1
2.29
2.54
.090 .100
A
2
1.91
2.16
.075 .085
b
1.14
1.40
.045 .055
b
1
1.91
2.13
.075 .084
b
2
2.92
3.12
.115 .123
C
0.61
0.80
.024 .031
D
20.80
21.34
.819 .840
E
15.75
16.13
.620 .635
e 5.45 BSC
.215 BSC
L
19.81
20.32
.780 .800
L1
3.81
4.32
.150 .170
Q
5.59
6.20
.220 .244
R
4.32
4.83
.170 .190
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Notes: 1. Pulse test, t
300 s, duty cycle d 2 %
2005 IXYS All rights reserved
IXTR 200N10P
Fig. 2. Extended Output Characteristics
@ 25
C
0
50
100
150
200
250
300
350
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
D S
- Volts
I
D
- A
m
p
e
re
s
V
GS
= 10V
7V
6V
8V
9V
Fig. 3. Output Characteristics
@ 150
C
0
25
50
75
100
125
150
175
200
0
0.5
1
1.5
2
2.5
3
3.5
V
D S
- Volts
I
D
- A
m
p
e
re
s
V
GS
= 10V
9V
5V
6V
7V
8V
Fig. 1. Output Characteristics
@ 25
C
0
25
50
75
100
125
150
175
200
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
D S
- Volts
I
D
- A
m
p
e
re
s
V
GS
= 10V
9V
7V
6V
8V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
-50
-25
0
25
50
75
100
125
150
175
T
J
- Degrees Centigrade
R
D
S
(
o n
)
- N
o
rm
a
l
i
z
e
d
I
D
= 200A
I
D
= 100A
V
GS
= 10V
Fig. 5. R
DS(on)
Norm alized to 0.5 I
D25
Value vs. Drain Current
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0
50
100
150
200
250
300
350
I
D
- Amperes
R
D
S
(
o
n )
- N
o
rm
a
l
i
z
e
d
T
J
= 25
C
V
GS
= 10V
T
J
= 175
C
V
GS
= 15V
Fig. 6. Drain Current vs. Case
Tem perature
0
10
20
30
40
50
60
70
80
90
-50
-25
0
25
50
75
100
125
150
175
T
C
- Degrees Centigrade
I
D
- A
m
p
e
re
s
External Lead Current limit
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTR 200N10P
Fig. 11. Capacitance
100
1,000
10,000
100,000
0
5
10
15
20
25
30
35
40
V
DS
- Volts
C
a
pac
i
t
anc
e -
pi
c
o
F
a
r
a
ds
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
25
50
75
100 125 150 175 200 225 250
Q
G
- nanoCoulombs
V
G S
- V
o
l
t
s
V
DS
= 50V
I
D
= 100A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
50
100
150
200
250
300
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
V
G S
- Volts
I
D
- A
m
p
e
re
s
T
J
= 150
C
25
C
-40
C
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
0
50
100
150
200
250
300
350
I
D
- Amperes
g
f s
- S
i
e
m
e
n
s
T
J
= -40
C
25
C
150
C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
50
100
150
200
250
300
350
0.4
0.6
0.8
1
1.2
1.4
1.6
V
S D
- Volts
I
S
-
A
m
p
e
re
s
T
J
= 150
C
T
J
= 25
C
Fig. 12. Forw ard-Bias
Safe Operating Area
10
100
1000
1
10
100
1000
V
D S
- Volts
I
D
-
A
m
p
e
re
s
100s
1ms
DC
T
J
= 175
C
T
C
= 25
C
R
DS(on)
Limit
10ms
2005 IXYS All rights reserved
IXTR 200N10P
Fig. 1 3 . M a x im um Tra ns ie nt The rm a l Re s is ta nc e
0 . 0 1
0 . 1 0
1 . 0 0
1
1 0
1 0 0
1 0 0 0
Pu ls e W idth - millis ec on ds
R
( t h
) J
C
-
C / W
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