2004 IXYS All rights reserved
G = Gate
D = Drain
S = Source
TAB = Drain
DS99118B(07/04)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
250
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
2.5
5.0
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
25
A
V
GS
= 0 V
T
J
= 125
C
250
A
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
27
m
Pulse test, t
300 s, duty cycle d 2 %
PolarHT
TM
Power MOSFET
IXTQ 100N25P V
DSS
= 250 V
IXTK 100N25P I
D25
= 100 A
IXTT 100N25P
R
DS(on)
= 27 m
Advanced Technical Information
N-Channel Enhancement Mode
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
PolarHT
TM
DMOS transistors
utilize proprietary designs and
process. US patent is pending.
TO-268 (IXTT)
G
S
TO-264(SP) (IXTK)
G D
S
D (TAB)
D (TAB)
G
D
S
(TAB)
TO-3P (IXTQ)
G = Gate,
D = Drain,
S = Source,
TAB = Drain
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150C
250
V
V
DGR
T
J
= 25
C to 150C; R
GS
= 1 M
250
V
V
GSM
20
V
I
D25
T
C
= 25
C
100
A
I
D(RMS)
External lead current limit
75
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
250
A
I
AR
T
C
= 25
C
60
A
E
AR
T
C
= 25
C
60
mJ
E
AS
T
C
= 25
C
2.0
J
dv/dt
I
S
I
DM
, di/dt
100 A/s, V
DD
V
DSS
,
10
V/ns
T
J
150C, R
G
= 4
P
D
T
C
= 25
C
600
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-3P
5.5
g
TO-264
10
g
TO-268
5
g
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTQ 100N25P IXTT 100N25P
IXTK 100N25P
Symbol
Test Conditions Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
40
56
S
C
iss
6300
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1150
pF
C
rss
240
pF
t
d(on)
25
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
26
ns
t
d(off)
R
G
= 3.3
(External)
100
ns
t
f
28
ns
Q
g(on)
185
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
43
nC
Q
gd
91
nC
R
thJC
0.21 K/W
R
thCK
TO-3P
0.21
K/W
R
thCK
TO-264
0.15
K/W
Source-Drain Diode Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
Min.
typ.
Max.
I
S
V
GS
= 0 V
100
A
I
SM
Repetitive
250
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300 s, duty cycle d 2 %
t
rr
I
F
= 25 A
200
ns
-di/dt = 100 A/
s
Q
RM
V
R
= 100 V
3.0
C
TO-268 Outline
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
1 2 3
TO-264 Outline
TO-3P Outline
2004 IXYS All rights reserved
IXTQ 100N25P IXTT 100N25P
IXTK 100N25P
Fig. 2. Extended Output Characteristics
@ 25
C
0
25
50
75
100
125
150
175
200
225
250
0
2
4
6
8
10
12
14
16
18
20
V
DS
- Volts
I
D
- A
m
p
e
re
s
V
GS
= 10V
7V
6V
8V
9V
Fig. 3. Output Characteristics
@ 125
C
0
10
20
30
40
50
60
70
80
90
100
0
1
2
3
4
5
6
7
V
DS
- Volts
I
D
- A
m
p
e
r
e
s
V
GS
= 10V
9V
8V
5V
6V
7V
Fig. 1. Output Characteristics
@ 25
C
0
10
20
30
40
50
60
70
80
90
100
0
0.5
1
1.5
2
2.5
3
3.5
V
DS
- Volts
I
D
- A
m
p
e
r
e
s
V
GS
= 10V
9V
8V
7V
6V
5V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D
S
(
on)
- N
o
rm
a
l
i
z
e
d
I
D
= 100A
I
D
= 50A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
10
20
30
40
50
60
70
80
90
100
110
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
- A
m
p
e
r
e
s
Fig. 5. R
DS(on)
Norm alized to
0.5 I
D25
Value vs. I
D
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
3.4
0
25
50
75
100 125 150 175 200 225 250
I
D
- Amperes
R
DS
(
o
n
)
- N
o
rm
a
l
i
z
e
d
T
J
= 125C
T
J
= 25C
V
GS
= 10V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTQ 100N25P IXTT 100N25P
IXTK 100N25P
Fig. 11. Capacitance
100
1000
10000
0
5
10
15
20
25
30
35
40
V
DS
- Volts
Capa
c
i
t
a
nc
e -
p
i
c
o
F
a
r
a
ds
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
100 120 140 160 180 200
Q
G
- nanoCoulombs
V
G S
- V
o
l
t
s
V
DS
= 125V
I
D
= 50A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
25
50
75
100
125
150
4
4.5
5
5.5
6
6.5
7
7.5
8
V
GS
- Volts
I
D
-
A
m
per
es
T
J
= 125C
25C
-40C
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
0
25
50
75
100
125
150
175
200
I
D
- Amperes
g
fs
-
S
i
e
m
ens
T
J
= -40C
25C
125C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
50
100
150
200
250
300
0.4
0.6
0.8
1
1.2
1.4
V
SD
- Volts
I
S
- A
m
p
e
r
e
s
T
J
= 125C
T
J
= 25C
Fig. 12. Forw ard-Bias
Safe Operating Area
1
10
100
1000
10
100
1000
V
DS
- Volts
I
D
- A
m
p
e
r
e
s
100s
1ms
DC
T
J
= 150C
T
C
= 25C
R
DS(on)
Limit
10ms
25s
2004 IXYS All rights reserved
IXTQ 100N25P IXTT 100N25P
IXTK 100N25P
Fig. 13. Maxim um Transient Therm al Resistance
0.01
0.10
1.00
1
10
100
1000
Pulse Width - milliseconds
R
(th)J
C
-
C
/W
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