2005 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
150
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
3.0
5.0
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
25
A
V
GS
= 0 V
T
J
= 175
C
500
A
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
16
m
Pulse test, t
300 s, duty cycle d 2 %
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 175C
150
V
V
DGR
T
J
= 25
C to 175C; R
GS
= 1 M
150
V
V
DSS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
120
A
I
D(RMS)
External lead current limit
75
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
260
A
I
AR
T
C
= 25
C
60
A
E
AR
T
C
= 25
C
60
mJ
E
AS
T
C
= 25
C
2.0
J
dv/dt
I
S
I
DM
, di/dt
100 A/s, V
DD
V
DSS
,
10
V/ns
T
J
150C, R
G
= 4
P
D
T
C
= 25
C
600
W
T
J
-55 ... +175
C
T
JM
175
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
M
d
Mounting torque
(TO-3P)
1.13/10 Nm/lb.in.
Weight
TO-3P
5.5
g
TO-268
5.0
g
G = Gate
D = Drain
S = Source
TAB = Drain
DS99298(01/05)
PolarHT
TM
Power MOSFET
IXTQ 120N15P V
DSS
= 150 V
IXTT 120N15P I
D25
= 120 A
R
DS(on)
16 m
Advanced Technical Information
N-Channel Enhancement Mode
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
TO-3P (IXTQ)
G
D
S
(TAB)
TO-268 (IXTT)
G
S
D (TAB)
Symbol
Test Conditions Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
40
60
S
C
iss
4900
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1300
pF
C
rss
330
pF
t
d(on)
33
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 60 A
42
ns
t
d(off)
R
G
= 4
(External)
85
ns
t
f
26
ns
Q
g(on)
150
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
40
nC
Q
gd
80
nC
R
thJC
0.25 K/W
R
thCK
(TO-3P)
0.21
K/W
Source-Drain Diode Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
Min.
typ.
Max.
I
S
V
GS
= 0 V
120
A
I
SM
Repetitive
260
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300 s, duty cycle d 2 %
t
rr
I
F
= 25 A
150
ns
-di/dt = 100 A/
s
Q
RM
V
R
= 50 V
2.3
C
IXTQ 120N15P
IXTT 120N15P
TO-268 Outline
TO-3P (IXTQ) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6771478 B2
2005 IXYS All rights reserved
IXTQ 120N15P
IXTT 120N15P
Fig. 2. Extended Output Characteristics
@ 25
C
0
40
80
120
160
200
240
280
0
1
2
3
4
5
6
7
8
9
10
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
7V
6V
8V
9V
Fig. 3. Output Characteristics
@ 150
C
0
20
40
60
80
100
120
0
1
2
3
4
5
V
D S
- Volts
I
D
-
A
m
p
e
re
s
V
GS
= 10V
9V
5V
6V
7V
8V
Fig. 1. Output Characteristics
@ 25
C
0
20
40
60
80
100
120
0
0.5
1
1.5
2
2.5
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
9V
7V
6V
5V
8V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
-50
-25
0
25
50
75
100
125
150
175
T
J
- Degrees Centigrade
R
D
S
(
o n )
-
N
o
rm
a
l
i
z
e
d
I
D
= 120A
I
D
= 60A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
10
20
30
40
50
60
70
80
90
-50
-25
0
25
50
75
100
125
150
175
T
C
- Degrees Centigrade
I
D
-
A
m
per
es
External Lead Current Limit
Fig. 5. R
DS(on)
Norm alized to 0.5 I
D25
Value vs. Drain Current
0.5
1
1.5
2
2.5
3
3.5
4
0
30
60
90
120 150 180 210 240 270 300
I
D
- Amperes
R
D
S
(
o n )
-
N
o
rm
a
l
i
z
e
d
T
J
= 25
C
V
GS
= 10V
T
J
= 175
C
V
GS
= 15V
IXTQ 120N15P
IXTT 120N15P
Fig. 11. Capacitance
100
1,000
10,000
0
5
10
15
20
25
30
35
40
V
DS
- Volts
C
apac
i
t
anc
e -
pi
c
o
F
a
r
ads
C
iss
C
oss
C
rss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
100
120
140
160
Q
G
- nanoCoulombs
V
G S
-
V
o
l
t
s
V
DS
= 75V
I
D
= 60A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
30
60
90
120
150
180
210
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
V
G S
- Volts
I
D
-
A
m
per
es
T
J
= 150
C
25
C
-40
C
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
0
30
60
90
120
150
180
210
240
270
I
D
- Amperes
g
f s
-
S
i
em
ens
T
J
= -40
C
25
C
150
C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
50
100
150
200
250
300
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
V
S D
- Volts
I
S
-
A
m
per
es
T
J
= 150
C
T
J
= 25
C
Fig. 12. Forw ard-Bias
Safe Operating Area
10
100
1000
10
100
1000
V
D S
- Volts
I
D
-
A
m
per
es
100s
1ms
DC
T
J
= 175
C
T
C
= 25
C
R
DS(on)
Limit
10ms
25s
2005 IXYS All rights reserved
IXTQ 120N15P
IXTT 120N15P
Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e
0 . 0 1
0 . 1 0
1 . 0 0
0 . 1
1
1 0
1 0 0
1 0 0 0
Pu ls e W id th - m illis e c o n d s
R
( t
h
) J
C
-
C
/
W
PDF 
ZIP