2004 IXYS All rights reserved
G = Gate
D = Drain
S = Source
TAB = Drain
DS99228(11/04)
PolarHV
TM
Power MOSFET
IXTQ 36N50P
V
DSS
= 500 V
IXTT 36N50P
I
D25
= 36 A
R
DS(on)
170 m
Advanced Technical Information
N-Channel Enhancement Mode
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
TO-268 (IXTT)
G
S
D (TAB)
TO-3P (IXTQ)
G
D
S
D (TAB)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
2.5
5.0
V
I
GSS
V
GS
=
30 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
25
A
V
GS
= 0 V
T
J
= 125
C
250
A
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
170
m
Pulse test, t
300 s, duty cycle d 2 %
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150C
500
V
V
DGR
T
J
= 25
C to 150C; R
GS
= 1 M
500
V
V
GSS
20
V
V
GSM
30
V
I
D25
T
C
= 25
C
36
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
100
A
I
AR
T
C
= 25
C
36
A
E
AR
T
C
= 25
C
50
mJ
E
AS
T
C
= 25
C
1.5
J
dv/dt
I
S
I
DM
, di/dt
100 A/s, V
DD
V
DSS
,
10
V/ns
T
J
150C, R
G
= 4
P
D
T
C
= 25
C
500
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
Plastic body
250
C
M
d
Mounting torque
(TO-3P)
1.13/10 Nm/lb.in.
Weight
TO-3P
5.5
g
TO-268
5.0
g
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTQ 36N50P
IXTT 36N50P
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 20 V; I
D
= 0.5 I
D25
, pulse test
25
35
S
C
iss
4800
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
510
pF
C
rss
60
pF
t
d(on)
29
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 I
D25
23
ns
t
d(off)
R
G
= 4
(External)
82
ns
t
f
23
ns
Q
g(on)
135
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
30
nC
Q
gd
65
nC
R
thJC
0.25
K/W
R
thCK
0.21
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
36
A
I
SM
Repetitive
100
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300 s, duty cycle d 2 %
t
rr
I
F
= 25A, -di/dt = 100 A/
s
300
ns
Q
RM
V
R
= 100V
3.3
C
TO-268 Outline
TO-3P (IXTQ) Outline
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
2004 IXYS All rights reserved
IXTQ 36N50P
IXTT 36N50P
Fig. 2. Exte nded Output Characte ris tics
@ 25
C
0
10
20
30
40
50
60
70
80
0
2
4
6
8
10
12
14
16
18
20
22
24
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
8V
5.5V
5V
6V
6.5V
7V
Fig. 3. Output Characteris tics
@ 125
C
0
4
8
12
16
20
24
28
32
36
0
2
4
6
8
10
12
14
16
V
D S
- Volts
I
D
- A
m
p
e
re
s
V
GS
= 10V
7V
6V
4.5V
5V
5.5V
Fig. 1. Output Characteristics
@ 25
C
0
4
8
12
16
20
24
28
32
36
0
1
2
3
4
5
6
7
V
D S
- Volts
I
D
- A
m
p
e
r
e
s
V
GS
= 10V
8V
7V
5V
6V
5.5V
Fig. 4. R
DS(on
)
Norm alize d to 0.5 I
D25
Value vs . Junction Tem pe rature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D
S
(
o
n )
- N
o
rm
a
l
i
z
e
d
I
D
= 36A
I
D
= 18A
V
GS
= 10V
Fig. 6. Drain Curre nt vs. Cas e
Te m perature
0
5
10
15
20
25
30
35
40
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
- A
m
p
e
re
s
Fig. 5. R
DS(on)
Norm alize d to
0.5 I
D25
Value vs . I
D
0.6
1
1.4
1.8
2.2
2.6
3
3.4
0
10
20
30
40
50
60
70
80
I
D
- Amperes
R
D S
(
o
n
)
- N
o
rm
a
l
i
z
e
d
T
J
= 125C
T
J
= 25C
V
GS
= 10V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTQ 36N50P
IXTT 36N50P
Fig. 11. Capacitance
10
100
1000
10000
0
5
10
15
20
25
30
35
40
V
D S
- Volts
C
apac
i
t
anc
e -
pi
c
o
F
a
r
ads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
100
120
140
Q
G
- nanoCoulombs
V
G S
-
V
o
l
t
s
V
DS
= 250V
I
D
= 18A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
5
10
15
20
25
30
35
40
45
50
55
4
4.5
5
5.5
6
6.5
7
V
G S
- Volts
I
D
-
A
m
per
es
T
J
= 125C
25C
-40C
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
80
90
I
D
- Amperes
g
f s
-
S
i
e
m
e
n
s
T
J
= -40C
25C
125C
Fig. 9. Source Curre nt vs .
Source-To-Drain Voltage
0
10
20
30
40
50
60
70
80
90
100
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
V
S D
- Volts
I
S
- A
m
p
e
r
e
s
T
J
= 125C
T
J
= 25C
Fig. 12. Forw ard-Bias
Safe Operating Are a
1
10
100
1000
10
100
1000
V
D S
- Volts
I
D
-
A
m
per
es
100s
1ms
DC
T
J
= 150C
T
C
= 25C
R
DS(on)
Limit
10ms
25s
2004 IXYS All rights reserved
IXTQ 36N50P
IXTT 36N50P
Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e
0 . 0 1
0 . 1 0
1 . 0 0
0 . 1
1
1 0
1 0 0
1 0 0 0
Pu ls e W id th - m illis e c o n d s
R
( t h ) J C
-
C /
W
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