2004 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150C
1200
V
V
DGR
T
J
= 25
C to 150C; R
GS
= 1 M
1200
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
6
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
24
A
I
AR
T
C
= 25
C
6
A
E
AR
T
C
= 25
C
25
mJ
E
AS
T
C
= 25
C
500
mJ
dv/dt
I
S
I
DM
, di/dt
100 A/s, V
DD
V
DSS
,
5
V/ns
T
J
150C, R
G
= 2
P
D
T
C
= 25
C
300
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-247 AD
6
g
TO-268
4
g
TO-247 AD (IXTH)
G = Gate
D = Drain
S = Source
TAB = Drain
(TAB)
DS99024B(01/04)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
=
250 A
1200
V
V
GS(th)
V
DS
= V
GS
, I
D
=
250A
2.5
5.0
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
T
J
= 25
C
25
A
V
GS
= 0 V
T
J
= 125
C
500
A
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
2.6
Pulse test, t
300 s, duty cycle d 2 %
TO-268
(IXTT) Case Style
(TAB)
G
S
High Voltage
Power MOSFET
IXTH 6N120
V
DSS
= 1200 V
IXTT 6N120
I
D25
= 6 A
R
DS(on)
= 2.6
N-Channel Enhancement Mode
Avalanche Rated
Features
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
Preliminary Data Sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXTH 6N120
IXTT 6N120
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ. Max.
g
fs
V
DS
= 20 V; I
D
= 0.5 I
D25
, pulse test
3
5
S
C
iss
1950
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
175
pF
C
rss
60
pF
t
d(on)
28
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
33
ns
t
d(off)
R
G
= 4.7
(External)
42
ns
t
f
18
ns
Q
g(on)
56
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
13
nC
Q
gd
25
nC
R
thJC
0.42
K/W
R
thCK
(TO-247)
0.21
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
6
A
I
SM
Repetitive
24
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300 s, duty cycle d 2 %
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
TO-247 AD Outline
Terminals: 1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
TO-268 Outline
Terminals: 1 - Gate
2 - Drain
3 - Source
Tab - Drain
Min Recommended Footprint
T
rr
I
F
= 6A
-di/dt = 100 A/
s
850
ns
2004 IXYS All rights reserved
IXTH 6N120
IXTT 6N120
Fig. 2. Extended Output Characteristics
@ 25 deg. C
0
2
4
6
8
10
0
5
10
15
20
25
30
V
DS
- Volts
I
D
- A
m
p
e
re
s
V
GS
= 1 0V
9V
8V
7V
5V
6V
Fig. 3. Output Characteristics
@ 125 Deg. C
0
1
2
3
4
5
6
0
5
10
15
20
25
30
V
DS
- Volts
I
D
-
A
m
p
e
re
s
V
GS
= 1 0V
9V
8V
7V
6V
5V
Fig. 1. Output Characteristics
@ 25 Deg. C
0
1
2
3
4
5
6
0
2
4
6
8
10
12
14
16
V
DS
- Volts
I
D
- A
m
p
e
re
s
V
GS
= 1 0V
9V
8V
7V
5V
6V
Fig. 4. R
DS(on)
Normalized to I
D25
Value vs.
Junction Temperature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
DS
(
o
n
)
-
N
o
r
m
a
liz
e
d
I
D
= 6A
I
D
= 3A
V
GS
= 1 0V
Fig. 6. Drain Current vs. Case
Temperature
0
1
2
3
4
5
6
7
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
-
A
m
p
e
r
e
s
Fig. 5. R
DS(on)
Normalized to I
D25
Value vs. I
D
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
0
1.5
3
4.5
6
7.5
9
I
D
- Amperes
R
DS
(o
n
)
-
N
o
r
m
a
liz
e
d
T
J
= 1 25C
T
J
= 25C
V
GS
= 1 0V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXTH 6N120
IXTT 6N120
Fig. 11. Capacitance
10
100
1000
10000
0
5
10
15
20
25
30
35
40
V
DS
- Volts
C
a
p
a
c
i
t
anc
e -
p
F
C
iss
C
oss
C
rss
f = 1 M hz
Fig. 10. Gate Charge
0
2
4
6
8
10
0
10
20
30
40
50
60
Q
G
- nanoCoulombs
V
GS
-
V
o
l
t
s
V
DS
= 600V
I
D
= 3A
I
G
= 1 0mA
Fig. 7. Input Admittance
0
1
2
3
4
5
6
3.5
4
4.5
5
5.5
6
6.5
V
GS
- Volts
I
D
- A
m
p
e
re
s
T
J
= -40C
25C
1 25C
Fig. 12. Maximum Transient Thermal
Resistance
0.01
0.1
1
1
10
100
1000
Pulse Width - milliseconds
R
(t
h
)
J
C
-
(
C
/
W
)
Fig. 8. Transconductance
0
2
4
6
8
10
12
0
1.5
3
4.5
6
7.5
9
I
D
- Amperes
G
fs
-
S
i
em
en
s
T
J
= -40C
25C
1 25C
Fig. 9. Source Current vs. Source-To-Drain
Voltage
0
4
8
12
16
20
0.4
0.5
0.6
0.7
0.8
0.9
V
SD
- Volts
I
S
- A
m
p
e
re
s
T
J
= 1 25C
T
J
= 25C
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