1997 IXYS All rights reserved
S
G
S
D
G = Gate
D = Drain
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
High Current
Power MOSFET
N-Channel Enhancement Mode
V
DSS
I
D25
R
DS(on)
IXTN 58N50
500 V
58 A 85
m
IXTN 61N50
500 V
61 A 75 m
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25C to 150C
500
V
V
DGR
T
J
= 25C to 150C; R
GS
= 1.0 M
500
V
V
G S
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25C
IXTN 58N50
58
A
IXTN 61N50
61
A
I
DM
T
C
= 25C
IXTN 58N50
232
A
Pulse width limited by T
JM
IXTN 61N50
244
A
P
D
T
C
= 25C
625
W
T
J
-40 ... +150
C
T
JM
150
C
T
stg
-40 ... +150
C
V
ISOL
50/60 Hz, RMS
t = 1 minute
2500
V~
t = 1s
3000
V~
M
d
Mounting torque
1.5/13 Nm/lb.in.
Terminal connection torque (M4)
1.5/13 Nm/lb.in.
Weight
30
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25C unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 5 mA
500
V
V
GS(th)
V
DS
= V
GS
,
I
D
= 12 mA
1.7
4.0
V
I
GSS
V
GS
=
20 V DC, V
DS
= 0
200
nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25C
500
A
V
GS
= 0 V
T
J
= 125C
2
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
58N50
85
m
61N50
75
m
Pulse test, t
300 s, duty cycle
2 %
Preliminary Data
Features
International standard package
Isolation voltage 3000V (RMS)
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Low drain-to-case capacitance
(<100 pF)
- reduced RFI
Low package inductance (< 10 nH)
- easy to drive and to protect
Aluminium Nitride Isolation
- increased current ratings
Applications
DC choppers
AC motor speed controls
DC servo and robot drives
Uninterruptible power supplies (UPS)
Switched mode and resonant mode
power supplies
Advantages
Easy to mount
Space savings
High power density
miniBLOC, SOT-227 B
E153432
95501B(4/97)
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTN 58N50
IXTN 61N50
Symbol
Test Conditions
Characteristic Values
(T
J
= 25C unless otherwise specified)
Min. Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
20
30
S
C
iss
11000
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1550
pF
C
rss
225
pF
t
d(on)
30
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 50 A
60
ns
t
d(off)
R
G
= 1
(External)
100
ns
t
f
50
ns
Q
g
420
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D2
55
nC
Q
gd
160
nC
R
thJC
0.20 K/W
R
thCK
0.05
K/W
Source-Drain Diode
Ratings and Characteristics
(T
J
= 25C unless otherwise specified)
Symbol
Test Conditions
Min. Typ. Max.
I
S
V
GS
= 0 V
61
A
I
SM
Repetitive; pulse width limited by T
JM
244
A
V
SD
I
F
= I
S,
V
GS
= 0 V,
1.5
V
Pulse test, t
300 s, duty cycle
2 %
t
rr
I
F
= 50A
,
di/dt = -100 A/s, V
R
= 100 V
800
ns
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
31.50
31.88
1.240
1.255
B
7.80
8.20
0.307
0.323
C
4.09
4.29
0.161
0.169
D
4.09
4.29
0.161
0.169
E
4.09
4.29
0.161
0.169
F
14.91
15.11
0.587
0.595
G
30.12
30.30
1.186
1.193
H
38.00
38.23
1.496
1.505
J
11.68
12.22
0.460
0.481
K
8.92
9.60
0.351
0.378
L
0.76
0.84
0.030
0.033
M
12.60
12.85
0.496
0.506
N
25.15
25.42
0.990
1.001
O
1.98
2.13
0.078
0.084
P
4.95
5.97
0.195
0.235
Q
26.54
26.90
1.045
1.059
R
3.94
4.42
0.155
0.174
S
4.72
4.85
0.186
0.191
T
24.59
25.07
0.968
0.987
U
-0.05
0.1
-0.002
0.004
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