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2005 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150C
200
V
V
DGR
T
J
= 25
C to 150C; R
GS
= 1 M
200
V
V
GSM
20
V
I
D25
T
C
= 25
C
96
A
I
D(RMS)
External lead current limit
75
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
225
A
I
AR
T
C
= 25
C
60
A
E
AR
T
C
= 25
C
50
mJ
E
AS
T
C
= 25
C
1.5
J
dv/dt
I
S
I
DM
, di/dt
100 A/s, V
DD
V
DSS
,
10
V/ns
T
J
150C, R
G
= 4
P
D
T
C
= 25
C
600
W
T
J
-55 ... +175
C
T
JM
175
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
M
d
Mounting torque
(TO-3P, TO-247)
1.13/10 Nm/lb.in.
Weight
TO-3P
5.5
g
TO-247
6.0
g
TO-268
5.0
g
G = Gate
D = Drain
S = Source
TAB = Drain
DS99117D(01/05)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
200
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
2.5
5.0
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
25
A
V
GS
= 0 V
T
J
= 150
C
250
A
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
24
m
Pulse test, t
300 s, duty cycle d 2 %
PolarHT
TM
Power MOSFET
IXTH 96N20P
V
DSS
= 200 V
IXTQ 96N20P
I
D25
= 96 A
IXTT 96N20P
R
DS(on)
= 24 m
N-Channel Enhancement Mode
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
TO-3P (IXTQ)
G
D
S
TO-268 (IXTT)
G
S
D (TAB)
G
D S
TO-247 (IXTH)
(TAB)
(TAB)
Symbol
Test Conditions Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
40
52
S
C
iss
4800
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1020
pF
C
rss
270
pF
t
d(on)
28
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
30
ns
t
d(off)
R
G
= 4
(External)
75
ns
t
f
30
ns
Q
g(on)
145
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
30
nC
Q
gd
80
nC
R
thJC
0.25 K/W
R
thCK
(TO-3P, TO-247)
0.21
K/W
Source-Drain Diode Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
Min.
typ.
Max.
I
S
V
GS
= 0 V
96
A
I
SM
Repetitive
240
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300 s, duty cycle d 2 %
t
rr
I
F
= 25 A
160
ns
-di/dt = 100 A/
s
Q
RM
V
R
= 100 V
3.0
C
IXTH 96N20P IXTQ 96N20P
IXTT 96N20P
TO-268 Outline
TO-3P (IXTQ) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6771478 B2
TO-247 AD Outline
Terminals: 1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
2005 IXYS All rights reserved
Fig. 2. Extended Output Characteristics
@ 25
C
0
25
50
75
100
125
150
175
200
225
250
0
2
4
6
8
10
12
14
16
18
20
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
7V
6V
8V
9V
Fig. 3. Output Characteristics
@ 150
C
0
10
20
30
40
50
60
70
80
90
100
0
1
2
3
4
5
6
7
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
9V
5V
6V
7V
8V
Fig. 1. Output Characteristics
@ 25
C
0
10
20
30
40
50
60
70
80
90
100
0
0.5
1
1.5
2
2.5
3
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
9V
7V
6V
8V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-50
-25
0
25
50
75
100
125
150
175
T
J
- Degrees Centigrade
R
D
S
(
o n )
-
N
o
rm
a
l
i
z
e
d
I
D
= 96A
I
D
= 48A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
10
20
30
40
50
60
70
80
90
100
-50
-25
0
25
50
75
100
125
150
175
T
C
- Degrees Centigrade
I
D
-
A
m
per
es
Fig. 5. R
DS(on)
Norm alized to
0.5 I
D25
Value vs. I
D
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
3.4
3.7
4
4.3
0
25
50
75
100 125 150 175 200 225 250
I
D
- Amperes
R
D S
(
o
n
)
-
N
o
rm
a
l
i
z
e
d
T
J
= 125C
T
J
= 25C
V
GS
= 10V
T
J
= 175C
IXTH 96N20P IXTQ 96N20P
IXTT 96N20P
Fig. 11. Capacitance
100
1000
10000
0
5
10
15
20
25
30
35
40
V
DS
- Volts
C
apac
i
t
anc
e -
p
i
c
o
F
a
r
ads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
15
30
45
60
75
90
105 120 135 150
Q
G
- nanoCoulombs
V
G S
-
V
o
l
t
s
V
DS
= 100V
I
D
= 48A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
20
40
60
80
100
120
140
160
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
V
G S
- Volts
I
D
- A
m
p
e
r
e
s
T
J
= 150C
25C
-40C
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
0
25
50
75
100
125
150
175
200
I
D
- Amperes
g
f s
-
S
i
em
ens
T
J
= -40C
25C
150C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
50
100
150
200
250
300
0.4
0.6
0.8
1
1.2
1.4
1.6
V
S D
- Volts
I
S
- A
m
p
e
r
e
s
T
J
= 150C
T
J
= 25C
Fig. 12. Forw ard-Bias
Safe Operating Area
1
10
100
1000
10
100
1000
V
D S
- Volts
I
D
-
A
m
per
es
100s
1ms
DC
T
J
= 175C
T
C
= 25C
R
DS(on)
Limit
10ms
25s
IXTH 96N20P IXTQ 96N20P
IXTT 96N20P
2005 IXYS All rights reserved
F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e
0 . 0 1
0 . 1 0
1 . 0 0
1
1 0
1 0 0
1 0 0 0
Pu ls e W id th - m illis e c o n d s
R
( t h ) J
C
-
C
/ W
IXTH 96N20P IXTQ 96N20P
IXTT 96N20P
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