High Voltage MOSFET
D (TAB)
98809B (01/06)
G
D S
2006 IXYS All rights reserved
N-Channel, Depletion Mode
V
DSS
= 1000
V
I
D25
= 100 mA
R
DS(on)
= 110
Features
Normally ON mode
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Fast switching speed
Applications
Level shifting
Triggers
Solid state relays
Current regulators
IXTP 01N100D
IXTU 01N100D
IXTY 01N100D
Preliminary Data Sheet
TO-220 (IXTP)
Pins: 1 - Gate
2 - Drain
3 - Source TAB - Drain
TO-251 (IXTU)
D
S
G
D (TAB)
TO-252 (IXTY)
G
S
D (TAB)
Symbol
Test Conditions
Maximum Ratings
V
DSX
T
J
= 25C to 150C
1000
V
V
DGX
T
J
= 25C to 150C
1000
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
DSS
T
C
= 25C; T
J
= 25C to 150C
100
mA
I
DM
T
C
= 25C, pulse width limited by T
J
400
mA
P
D
T
C
= 25C
25
W
T
A
= 25C
1.1
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.063 in.) from case for 10 s
300
C
T
ISOL
Plastic case for 10 s (IXTU)
300
C
M
d
Mounting torque
TO-220
1.3 / 10
Nm/lb.
Weight
TO-220
4
g
TO-251
0.8
g
TO-252
0.8
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSX
V
GS
= -10 V, I
D
= 25
A
1000
V
V
GS(off)
V
DS
= 25V, I
D
= 25
A
-2.5
-5
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSX(off)
V
DS
= V
DSX
,
V
GS
= -10 V
10
A
T
J
= 125
C
250
A
R
DS(on)
V
GS
= 0 V, I
D
= 50 mA
Note 1
90
110
I
D(on)
V
GS
= 0 V, V
DS
= 25V
Note 1
100
mA
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTP 01N100D
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 50 V; I
D
= 100 mA
Note1
100
150
mS
C
iss
120
pF
C
oss
V
GS
= -10 V, V
DS
= 25 V, f = 1 MHz
25
pF
C
rss
5
pF
t
d(on)
V
DS
= 100 V V, I
D
= 50 mA
8
n s
t
r
V
GS
= 0 V to -10
6
n s
t
d(off)
R
G
= 30
(External)
30
n s
t
f
51
n s
R
thJC
5
K/W
R
thCS
TO-220
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
V
SD
V
GS
= -10 V, I
F
= 100 mA
Note1
1.0
1.5
V
t
rr
I
F
= 0.75 A, -di/dt = 10 A/
s,
1.5
s
V
DS
= 25 V, V
GS
= -10V
Note1: Pulse test, t
300 s, duty cycle d 2 %
TO-252 AA Outline
Dim. Millimeter
Inches
Min. Max.
Min.
Max.
A
2.19 2.38
0.086
0.094
A1
0.89 1.14
0.035
0.045
A2
0 0.13
0
0.005
b
0.64 0.89
0.025
0.035
b1
0.76 1.14
0.030
0.045
b2
5.21 5.46
0.205
0.215
c
0.46 0.58
0.018
0.023
c1
0.46 0.58
0.018
0.023
D
5.97 6.22
0.235
0.245
D1
4.32 5.21
0.170
0.205
E
6.35 6.73
0.250
0.265
E1
4.32 5.21
0.170
0.205
e
2.28 BSC
0.090 BSC
e1
4.57 BSC
0.180 BSC
H
9.40 10.42
0.370
0.410
L
0.51 1.02
0.020
0.040
L1
0.64 1.02
0.025
0.040
L2
0.89 1.27
0.035
0.050
L3
2.54 2.92
0.100
0.115
Pins: 1 - Gate
2 - Drain
3 - Source
TAB - Drain
Pins: 1 - Gate
2 - Drain
3 - Source
TAB - Drain
TO-220 AD Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
2.19
2.38
.086
.094
A1
0.89
1.14
0.35
.045
b
0.64
0.89
.025
.035
b1
0.76
1.14
.030
.045
b2
5.21
5.46
.205
.215
c
0.46
0.58
.018
.023
c1
0.46
0.58
.018
.023
D
5.97
6.22
.235
.245
E
6.35
6.73
.250
.265
e
2.28
BSC
.090
BSC
e1
4.57
BSC
.180
BSC
H
17.02
17.78
.670
.700
L
8.89
9.65
.350
.380
L1
1.91
2.28
.075
.090
L2
0.89
1.27
.035
.050
L3
1.15
1.52
.045
.060
TO-251 AA Outline
Pins: 1 - Gate
2 - Drain
3 - Source
TAB - Drain
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
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5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
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5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
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