2001 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 25
A
1000
V
V
V
GS(th)
V
DS
= V
GS
, I
D
= 25
A
2
4. 5
V
I
GSS
V
GS
= 20 V
DC
, V
DS
= 0
50
nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25C
10
A
V
GS
= 0 V
T
J
= 125C
200
A
R
DS(on)
V
GS
= 10 V, I
D
= I
D25
60
80
Pulse test, t
300 ms, duty cycle d
2 %
Symbol
Test Conditions
Maximum Ratings
01N100
V
DSS
T
J
= 25C to 150C
1000
V
V
DGR
T
J
= 25C to 150C; R
GS
= 1 M
1000
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25C; T
J
= 25C to 150C
100
mA
I
DM
T
C
= 25C, pulse width limited by max. T
J
400
mA
P
D
T
C
= 25C
25
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.063 in) from case for 5 s
300
C
Weight
0.8
g
High Voltage MOSFET
N-Channel, Enhancement Mode
TO-251 AA
D
S
G
G = Gate,
D = Drain,
S = Source,
TAB = Drain
D (TAB)
Features
l
International standard packages
JEDEC TO-251 AA, TO-252 AA
l
Low R
DS (on)
HDMOS
TM
process
l
Rugged polysilicon gate cell structure
l
Fast switching times
Applications
l
Level shifting
l
Triggers
l
Solid state relays
l
Current regulators
98812B (11/01)
TO-252 AA
G
S
V
DSS
= 1000 V
I
D25
= 100mA
R
DS(on)
= 80
IXTU 01N100
IXTY 01N100
D (TAB)
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
140
mS
C
iss
60
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
7.5
pF
C
rss
1.8
pF
t
d(on)
12
ns
t
r
V
GS
= 10 V, V
DS
= 500 V, I
D
= I
D25
12
ns
t
d(off)
R
G
= 50
(External)
28
ns
t
f
28
ns
Q
g(on)
8
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
1.8
nC
Q
gd
3
nC
R
thJC
3
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
V
SD
I
F
= 100 mA, V
GS
= 0 V,
1.8
V
Pulse test, t
300
s, duty cycle d
2 %
t
rr
I
F
= 0.75 A, -di/dt = 10 A/
s,
1.5
s
V
DS
= 25 V
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
2.19
2.38
.086
.094
A1
0.89
1.14
0.35
.045
b
0.64
0.89
.025
.035
b1
0.76
1.14
.030
.045
b2
5.21
5.46
.205
.215
c
0.46
0.58
.018
.023
c1
0.46
0.58
.018
.023
D
5.97
6.22
.235
.245
E
6.35
6.73
.250
.265
e
2.28
BSC
.090
BSC
e1
4.57
BSC
.180
BSC
H
17.02
17.78
.670
.700
L
8.89
9.65
.350
.380
L1
1.91
2.28
.075
.090
L2
0.89
1.27
.035
.050
L3
1.15
1.52
.045
.060
1. Gate
2. Drain
3. Source
4. Drain
Back heatsink
TO-251 AA Outline
IXTU 01N100
IXTY 01N100
TO-252 AA
Dim. Millimeter
Inches
Min. Max.
Min.
Max.
A
2.19 2.38
0.086
0.094
A1
0.89 1.14
0.035
0.045
A2
0 0.13
0
0.005
b
0.64 0.89
0.025
0.035
b1
0.76 1.14
0.030
0.045
b2
5.21 5.46
0.205
0.215
c
0.46 0.58
0.018
0.023
c1
0.46 0.58
0.018
0.023
D
5.97 6.22
0.235
0.245
D1
4.32 5.21
0.170
0.205
E
6.35 6.73
0.250
0.265
E1
4.32 5.21
0.170
0.205
e
2.28 BSC
0.090 BSC
e1
4.57 BSC
0.180 BSC
H
9.40 10.42
0.370
0.410
L
0.51 1.02
0.020
0.040
L1
0.64 1.02
0.025
0.040
L2
0.89 1.27
0.035
0.050
L3
2.54 2.92
0.100
0.115
1 Anode
2 NC
3 Anode
4 Cathode
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