Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
800
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
800
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
750
mA
I
DM
T
C
= 25
C, pulse width limited by T
JM
3
A
I
AR
1.0
A
E
AR
T
C
= 25
C
5
mJ
E
AS
T
C
= 25
C
100
mJ
dv/dt
I
S
I
DM
, di/dt
100 A/
s, V
DD
V
DSS
,
3
V/ns
T
J
150
C, R
G
= 47
P
D
T
C
= 25
C
40
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-220 4
g
TO-252 0.8
g
TO-263 3
g
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
High Voltage MOSFET
G = Gate,
D = Drain,
S = Source,
TAB = Drain
D (TAB)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
800
V
V
GS(th)
V
DS
= V
GS
, I
D
= 25
A
2.5
4.5
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
T
J
= 25
C
25
A
V
GS
= 0 V
T
J
= 125
C
500
A
R
DS(on)
V
GS
= 10 V, I
D
= 500 mA
9.5
11
Pulse test, t
300
s, duty cycle d
2 %
Features
!
International standard packages
!
High voltage, Low R
DS (on)
HDMOS
TM
process
!
Rugged polysilicon gate cell structure
!
Fast switching times
Applications
!
Switch-mode and resonant-mode
power supplies
!
Flyback inverters
!
DC choppers
!
High frequency matching
Advantages
!
Space savings
!
High power density
DS98822C(11/03)
G D
S
TO-220AB (IXTP)
2003 IXYS All rights reserved
G
S
TO-263 AA (IXTA)
D (TAB)
N-Channel Enhancement Mode
Avalanche Energy Rated
IXTA 1N80
IXTP 1N80
IXTY 1N80
V
DSS
= 800
V
I
D25
= 750 mA
R
DS(on)
= 11
Preliminary Data
TO-252 AA (IXTY)
G
S
D (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTP 1N80 IXTA 1N80
IXTY 1N80
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 20 V; I
D
= 500 mA, pulse test
0.7
0.8
S
C
iss
220
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
23
pF
C
rss
4
pF
t
d(on)
11
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 1A
19
ns
t
d(off)
R
G
= 47
,
(External)
40
ns
t
f
28
ns
Q
G(on)
8.5
nC
Q
GS
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 1A
2.5
nC
Q
GD
4.5
nC
R
thJC
3.1
K/W
R
thCK
(IXTP)
0.50
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
750 mA
I
SM
Repetitive; pulse width limited by T
JM
3
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.8
2
V
Pulse test, t
300
s, duty cycle d
2 %
t
rr
I
F
= I
S
, -di/dt = 100 A/
s, V
R
= 100 V
710
ns
Pins: 1 - Gate
2 - Drain
3 - Source
4 - Drain
Bottom Side
TO-220 AD Dimensions
TO-263 AA Outline
1. Gate
2. Drain
3. Source
4. Drain
Bottom Side
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.06
4.83
.160
.190
A1
2.03
2.79
.080
.110
b
0.51
0.99
.020
.039
b2
1.14
1.40
.045
.055
c
0.46
0.74
.018
.029
c2
1.14
1.40
.045
.055
D
8.64
9.65
.340
.380
D1
7.11
8.13
.280
.320
E
9.65
10.29
.380
.405
E1
6.86
8.13
.270
.320
e
2.54
BSC
.100
BSC
L
14.61
15.88
.575
.625
L1
2.29
2.79
.090
.110
L2
1.02
1.40
.040
.055
L3
1.27
1.78
.050
.070
L4
0
0.38
0
.015
R
0.46
0.74
.018
.029
Dim. Millimeter
Inches
Min. Max.
Min.
Max.
A
2.19 2.38
0.086
0.094
A1
0.89 1.14
0.035
0.045
A2
0 0.13
0
0.005
b
0.64 0.89
0.025
0.035
b1
0.76 1.14
0.030
0.045
b2
5.21 5.46
0.205
0.215
c
0.46 0.58
0.018
0.023
c1
0.46 0.58
0.018
0.023
D
5.97 6.22
0.235
0.245
D1
4.32 5.21
0.170
0.205
E
6.35 6.73
0.250
0.265
E1
4.32 5.21
0.170
0.205
e
2.28 BSC
0.090 BSC
e1
4.57 BSC
0.180 BSC
H
9.40 10.42
0.370
0.410
L
0.51 1.02
0.020
0.040
L1
0.64 1.02
0.025
0.040
L2
0.89 1.27
0.035
0.050
L3
2.54 2.92
0.100
0.115
TO-252 AA Outline
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