2005 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150C
500
V
V
DGR
T
J
= 25
C to 150C; R
GS
= 1 M
500
V
V
GS
Continuous
30
V
V
GSM
Transient
40
V
I
D25
T
C
= 25
C
1.6
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
2.5
A
I
AR
T
C
= 25
C
1.6
A
E
AR
T
C
= 25
C
5
mJ
E
AS
T
C
= 25
C
75
mJ
dv/dt
I
S
I
DM
, di/dt
100 A/s, V
DD
V
DSS
,
10
V/ns
T
J
150C, R
G
= 50
P
D
T
C
= 25
C
43
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10s 300
C
Maximum tab temperature for soldering
260
C
TO-252 package for 10s
M
d
Mounting torque (TO-220) 1.13/10 Nm/lb.in.
Weight
TO-252
0.8
g
TO-220
4 g
G = Gate
D = Drain
S = Source
TAB = Drain
DS99441(09/05)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
3.0
5.5
V
I
GSS
V
GS
=
30 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
5
A
V
GS
= 0 V
T
J
= 125
C
50
A
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
6.5
Pulse test, t
300 s, duty cycle d 2 %
PolarHV
TM
Power MOSFET
Advance Technical Information
N-Channel Enhancement Mode
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
IXTP 1R6N50P
IXTY 1R6N50P
V
DSS
= 500 V
I
D25
= 1.6 A
R
DS(on)
6.5
TO-252 (IXTY)
G
TAB
S
(TAB)
TO-220 (IXTP)
D
G
S
(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTP 1R6N50P
IXTY 1R6N50P
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
Symbol
Test Conditions Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 20 V; I
D
= 0.5 I
D25
, pulse test 0.7 1.4
S
C
iss
140
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
20
pF
C
rss
2.6
pF
t
d(on)
10
n s
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
=0.5 I
D25
16
ns
t
d(off)
R
G
= 20
(External)
25
n s
t
f
16
ns
Q
g(on)
3.9
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
1.4
nC
Q
gd
1.3
nC
R
thJC
2.9 K/W
Source-Drain Diode Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
Min.
typ.
Max.
I
S
V
GS
= 0 V
1.6
A
I
SM
Repetitive
2.5
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300 s, duty cycle d 2 %
t
rr
I
F
= 1.6 A, -di/dt = 100 A/
s
400
n s
V
R
= 100V
TO-252 AA Outline
Dim. Millimeter
Inches
Min.
Max.
Min.
Max.
A
2.19
2.38
0.086
0.094
A1
0.89
1.14
0.035
0.045
A2
0
0.13
0
0.005
b
0.64
0.89
0.025
0.035
b1
0.76
1.14
0.030
0.045
b2
5.21
5.46
0.205
0.215
c
0.46
0.58
0.018
0.023
c1
0.46
0.58
0.018
0.023
D
5.97
6.22
0.235
0.245
D1
4.32
5.21
0.170
0.205
E
6.35
6.73
0.250
0.265
E1
4.32
5.21
0.170
0.205
e
2.28 BSC
0.090 BSC
e1
4.57 BSC
0.180 BSC
H
9.40
10.42
0.370
0.410
L
0.51
1.02
0.020
0.040
L1
0.64
1.02
0.025
0.040
L2
0.89
1.27
0.035
0.050
L3
2.54
2.92
0.100
0.115
TO-220 Outline
Pins: 1 - Gate
2 - Drain
2005 IXYS All rights reserved
IXTP 1R6N50P
IXTY 1R6N50P
Fig. 2. Extended Output Characteristics
@ 25
C
0.0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
0
3
6
9
12
15
18
21
24
27
30
V
D S
- Volts
I
D
- A
m
p
e
r
e
s
V
GS
= 10V
8V
7V
6V
5V
Fig. 3. Output Characteristics
@ 125
C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
4
8
12
16
20
24
V
D S
- Volts
I
D
-
A
m
per
e
s
V
GS
= 10V
7V
5V
6V
Fig. 1. Output Characteristics
@ 25
C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
2
4
6
8
10
12
V
D S
- Volts
I
D
- A
m
p
e
r
e
s
V
GS
= 10V
8V
7V
5V
6V
Fig. 4. R
DS(on
)
Normalized to 0.5 I
D25
Value vs. Junction Temperature
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
2.75
3.00
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D S
(
o
n
)
- N
o
r
m
a
l
i
z
e
d
I
D
= 1.6A
I
D
= 0.8A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
-
A
m
per
es
Fig. 5. R
DS(on)
Normalized to
0.5 I
D25
Value vs. I
D
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
0
0.4
0.8
1.2
1.6
2
2.4
2.8
I
D
- Amperes
R
D
S
(
o n )
- N
o
r
m
a
l
i
z
e
d
T
J
= 125
C
T
J
= 25
C
V
GS
= 10V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTP 1R6N50P
IXTY 1R6N50P
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
Fig. 11. Capacitance
1
10
100
1000
0
5
10
15
20
25
30
35
40
V
D S
- Volts
C
a
pac
i
t
anc
e -
pi
c
o
F
a
r
a
ds
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
0.5
1
1.5
2
2.5
3
3.5
4
Q
G
- nanoCoulombs
V
G S
-
V
o
l
t
s
V
DS
= 250V
I
D
= 0.8A
I
G
= 10mA
Fig. 7. Input Adm ittance
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
4
4.5
5
5.5
6
6.5
V
G S
- Volts
I
D
-
A
m
per
e
s
T
J
= 125
C
25
C
-40
C
Fig. 8. Transconductance
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
I
D
- Amperes
g
f s
- S
i
e
m
e
n
s
T
J
= -40
C
25
C
125
C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.5
0.6
0.7
0.8
0.9
V
S D
- Volts
I
S
-
A
m
p
e
re
s
T
J
= 125
C
T
J
= 25
C
Fig. 12. Forw ard-Bias
Safe Operating Area
0.1
1
10
10
100
1000
V
D S
- Volts
I
D
-
A
m
p
e
re
s
100s
1ms
DC
T
J
= 150
C
T
C
= 25
C
R
DS(on)
Limit
10ms
25s
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