2006 IXYS All rights reserved
G = Gate
D = Drain
S = Source
TAB = Drain
DS99422E(04/06)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
BV
DSS
V
GS
= 0 V, I
D
= 25
A
600
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
3.0
5.0
V
I
GSS
V
GS
=
30 V, V
DS
= 0 V
50
nA
I
DSS
V
DS
= V
DSS
1
A
V
GS
= 0 V
T
J
= 125
C
50
A
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
5.1
Pulse test, t
300 s, duty cycle d 2 %
PolarHV
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Features
l
International standard packages
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Advantages
l
Easy to mount
l
Space savings
l
High power density
TO-220 (IXTP)
D
(TAB)
G
S
IXTP 2N60P
IXTY 2N60P
V
DSS
= 500 V
I
D25
= 2 A
R
DS(on)
5.1
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150 C
600
V
V
DGR
T
J
= 25
C to 150 C; R
GS
= 1 M
600
V
V
GSS
Continuous
30
V
V
GSM
Transient
40
V
I
D25
T
C
= 25
C
2
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
4
A
I
AR
T
C
= 25
C
2
A
E
AR
T
C
= 25
C
10
mJ
E
AS
T
C
= 25
C
150
mJ
dv/dt
I
S
I
DM
, di/dt
100 A/s, V
DD
V
DSS
,
10
V/ns
T
J
150 C, R
G
= 50
P
D
T
C
= 25
C
55
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
T
SOLD
Plastic body for 10 s
260
C
M
d
Mounting torque
(TO-220)
1.13/10 Nm/lb.in.
Weight
TO-220
4
g
TO-252 0.8 g
TO-252 AA (IXTY)
G
S
(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTP 2N60P
IXTY 2N60P
Symbol
Test Conditions Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 20 V; I
D
= 0.5 I
D25
, pulse test
1.4
2.2
S
C
iss
240
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
28
pF
C
rss
3.5
pF
t
d(on)
28
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
=0.5 I
D25
20
ns
t
d(off)
R
G
= 50
(External)
60
ns
t
f
23
ns
Q
g(on)
7.0
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
2.5
nC
Q
gd
2.1
nC
R
thJC
2.25
C/W
R
thCS
(TO-220)
0.25
C/W
Source-Drain Diode Characteristic Values
(T
J
= 25
C unless otherwise specified)
Symbol
Test Conditions
Min.
Typ.
Max.
I
S
V
GS
= 0 V
2
A
I
SM
Repetitive
6
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300 s, duty cycle d 2 %
t
rr
I
F
= 2 A
400
ns
-di/dt = 100 A/
s
Dim. Millimeter
Inches
Min. Max.
Min.
Max.
A
2.19
2.38
0.086
0.094
A1
0.89
1.14
0.035
0.045
A2
0
0.13
0
0.005
b
0.64
0.89
0.025
0.035
b1
0.76
1.14
0.030
0.045
b2
5.21
5.46
0.205
0.215
c
0.46
0.58
0.018
0.023
c1
0.46
0.58
0.018
0.023
D
5.97
6.22
0.235
0.245
D1
4.32
5.21
0.170
0.205
E
6.35
6.73
0.250
0.265
E1
4.32
5.21
0.170
0.205
e
2.28 BSC
0.090 BSC
e1
4.57 BSC
0.180 BSC
H
9.40 10.42
0.370
0.410
L
0.51
1.02
0.020
0.040
L1
0.64
1.02
0.025
0.040
L2
0.89
1.27
0.035
0.050
L3
2.54
2.92
0.100
0.115
TO-252 AA (IXTY) Outline
Pins: 1 - Gate
3 - Source
4 - Drain
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2
TO-220 (IXTP) Outline
Pins: 1 - Gate
2 - Drain
3 - Source
4 - Drain
2006 IXYS All rights reserved
Fig. 2. Extended Output Characteristics
@ 25
C
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
3.6
0
3
6
9
12
15
18
21
24
27
30
V
D S
- Volts
I
D
- A
m
p
e
re
s
V
GS
= 10V
8V
7V
6V
Fig. 3. Output Characteristics
@ 125
C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0
4
8
12
16
20
24
V
D S
- Volts
I
D
-
A
m
p
e
re
s
V
GS
= 10V
8V
7V
5V
6V
Fig. 1. Output Characteristics
@ 25
C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0
2
4
6
8
10
12
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
8V
7V
6V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
3.4
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D
S (
o
n )
-
Nor
m
al
iz
ed
I
D
= 2A
I
D
= 1A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
- A
m
p
e
re
s
Fig. 5. R
DS(on)
Norm alized to
0.5 I
D25
Value vs. I
D
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
0
0.5
1
1.5
2
2.5
3
3.5
I
D
- Amperes
R
D S
(
o
n
)
-
No
r
m
a
liz
ed
T
J
= 125
C
T
J
= 25
C
V
GS
= 10V
IXTP 2N60P
IXTY 2N60P
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTP 2N60P
IXTY 2N60P
Fig. 11. Capacitance
1
10
100
1000
0
5
10
15
20
25
30
35
40
V
D S
- Volts
C
apa
c
i
t
a
n
c
e -
p
i
c
o
F
a
r
a
ds
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
Q
G
- nanoCoulombs
V
G S
-
V
o
l
t
s
V
DS
= 300V
I
D
= 1A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
3.6
4
4.5
5
5.5
6
6.5
7
7.5
V
G S
- Volts
I
D
-
A
m
per
es
T
J
=125
C
25
C
-40
C
Fig. 8. Transconductance
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
3.6
4
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
I
D
- Amperes
g
f s
-
S
i
em
ens
T
J
= -40
C
25
C
125
C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
1
2
3
4
5
6
7
0.4
0.5
0.6
0.7
0.8
0.9
1
V
S D
- Volts
I
S
- A
m
p
e
re
s
T
J
= 125
C
T
J
= 25
C
Fig. 13. Maxim um Transient Therm al
Resistance
0.1
1.0
10.0
0.1
1
10
100
1000
Pulse Width - milliseconds
R
( t
h
)
J
C
-
C /
W
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