2005 IXYS All rights reserved
IXTP 2R4N50P
IXTY 2R4N50P
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150C
500
V
V
DGR
T
J
= 25
C to 150C; R
GS
= 1 M
500
V
V
GSM
Transient
40
V
V
GSM
Continuous
30
V
I
D25
T
C
= 25
C
2.4
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
4.5
A
I
AR
T
C
= 25
C
2.4
A
E
AR
T
C
= 25
C
8
mJ
E
AS
T
C
= 25
C
100
mJ
dv/dt
I
S
I
DM
, di/dt
100 A/s, V
DD
V
DSS
,
10
V/ns
T
J
150C, R
G
= 50
P
D
T
C
= 25
C
55
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
Plastic body for 10 seconds
260
C
M
d
Mounting torque
(TO-220)
1.13/10 Nm/lb.in.
Weight
TO-220
4
g
TO-252
0.8
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 25
A
3.0
5.0
V
I
GSS
V
GS
=
30 V
DC
, V
DS
= 0
50
nA
I
DSS
V
DS
= V
DSS
1
A
V
GS
= 0 V
T
J
= 125
C
50
A
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
, Note 1
3.75
PolarHV
TM
Power
MOSFET
Advance Technical Information
N-Channel Enhancement Mode
Avalanche Rated
Features
International standard packageS
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
IXTP 2R4N50P
IXTY 2R4N50P
V
DSS
= 500
V
I
D25
= 2.4
A
R
DS(on)
3.75
DS99445(09/05)
G = Gate
D = Drain
S = Source
TAB = Drain
TO-220 (IXTP)
D
(TAB)
G
S
TO-252 AA (IXTY)
G
S
(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTP 2R4N50P
IXTY 2R4N50P
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or more of the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6771478 B2
Symbol
Test Conditions Characteristic Values
(T
J
= 25
C unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 20 V; I
D
= 0.5 I
D25
, Note 1
1.0
2.2
S
C
iss
240
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
31
pF
C
rss
4
pF
t
d(on)
14
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
20
ns
t
d(off)
R
G
= 50
(External)
45
ns
t
f
18
ns
Q
g(on)
6.1
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
1.8
nC
Q
gd
2.9
nC
R
thJC
2.25 K/W
R
thCH
(TO-220)
0.25
KW
Source-Drain Diode Characteristic Values
T
J
= 25
C unless otherwise specified)
Symbol
Test Conditions
Min.
Typ.
Max.
I
S
V
GS
= 0 V
2.4
A
I
SM
Repetitive
9.6
A
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1
1.5
V
t
rr
I
F
= 2.4 A, -di/dt = 100 A/
s
400
ns
V
R
= 100 V; V
GS
= 0 V
Note 1:
Pulse test, t
300 s, duty cycle d 2 %
Dim. Millimeter
Inches
Min. Max.
Min.
Max.
A
2.19
2.38
0.086
0.094
A1
0.89
1.14
0.035
0.045
A2
0
0.13
0
0.005
b
0.64
0.89
0.025
0.035
b1
0.76
1.14
0.030
0.045
b2
5.21
5.46
0.205
0.215
c
0.46
0.58
0.018
0.023
c1
0.46
0.58
0.018
0.023
D
5.97
6.22
0.235
0.245
D1
4.32
5.21
0.170
0.205
E
6.35
6.73
0.250
0.265
E1
4.32
5.21
0.170
0.205
e
2.28 BSC
0.090 BSC
e1
4.57 BSC
0.180 BSC
H
9.40 10.42
0.370
0.410
L
0.51
1.02
0.020
0.040
L1
0.64
1.02
0.025
0.040
L2
0.89
1.27
0.035
0.050
L3
2.54
2.92
0.100
0.115
TO-252 AA Outline
Pins:
1 - Gate
2 - Drain
3 - Source
4 - Drain
TO-220 (IXTP) Outline
Pins:
1 - Gate
3 - Source
2, 4 - Drain
2005 IXYS All rights reserved
IXTP 2R4N50P
IXTY 2R4N50P
Fig. 2. Extended Output Characteristics
@ 25
C
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
3
6
9
12
15
18
21
24
27
30
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
8V
7V
5V
6V
Fig. 3. Output Characteristics
@ 125
C
0
0.4
0.8
1.2
1.6
2
2.4
0
2
4
6
8
10
12
14
16
18
20
22
V
D S
- Volts
I
D
- A
m
p
e
r
e
s
V
GS
= 10V
7V
6V
5V
Fig. 1. Output Characteristics
@ 25
C
0
0.4
0.8
1.2
1.6
2
2.4
0
1
2
3
4
5
6
7
8
9
10
V
D S
- Volts
I
D
-
A
m
per
es
V
GS =
10V
7V
5V
6V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
3.4
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D S
(
o
n
)
-
N
o
rm
a
l
i
z
e
d
I
D
= 2.4A
I
D
= 1.2A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0.0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
-
A
m
per
es
Fig. 5. R
DS(on)
Norm alized to
0.5 I
D25
Value vs. I
D
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
I
D
- Amperes
R
D
S
(
o n )
- N
o
rm
a
l
i
z
e
d
T
J
= 125
C
T
J
= 25
C
V
GS
= 10V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTP 2R4N50P
IXTY 2R4N50P
Fig. 11. Capacitance
1
10
100
1000
0
5
10
15
20
25
30
35
40
V
D S
- Volts
C
a
pa
c
i
t
a
nc
e
-
pi
c
o
F
a
r
a
d
s
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
Q
G
- nanoCoulombs
V
G S
- V
o
l
t
s
V
DS
= 250V
I
D
= 1.2A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
V
G S
- Volts
I
D
- A
m
p
e
r
e
s
T
J
= 125
C
25
C
-40
C
Fig. 8. Transconductance
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
2.5
3
3.5
4
I
D
- Amperes
g
f s
- S
i
e
m
e
n
s
T
J
= -40
C
25
C
125
C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
1
2
3
4
5
6
7
0.4
0.5
0.6
0.7
0.8
0.9
V
S D
- Volts
I
S
-
A
m
per
es
T
J
= 125
C
T
J
= 25
C
Fig. 12. Forw ard-Bias
Safe Operating Area
0.1
1
10
10
100
1000
V
D S
- Volts
I
D
- A
m
p
e
re
s
100s
1ms
DC
T
J
= 150
C
T
C
= 25
C
R
DS(on)
Limit
10ms
25s
2005 IXYS All rights reserved
IXTP 2R4N50P
IXTY 2R4N50P
Fig. 13. Maximum Transient Thermal Resistance
0.01
0.10
1.00
10.00
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
R
( t h ) J
C
-
C /
W
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