2006 IXYS All rights reserved
G = Gate
D = Drain
S = Source
TAB = Drain
DS99200E(12/05)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
BV
DSS
V
GS
= 0 V, I
D
= 250
A
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 50
A
3.0
5.5
V
I
GSS
V
GS
=
30 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
5
A
V
GS
= 0 V
T
J
= 125
C
50
A
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
2.0
Pulse test, t
300 s, duty cycle d 2 %
PolarHV
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Features
l
International standard packages
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Advantages
l
Easy to mount
l
Space savings
l
High power density
TO-263 (IXTA)
TO-220 (IXTP)
D
(TAB)
G
S
IXTA 3N50P
IXTP 3N50P
IXTY 3N50P
V
DSS
= 500 V
I
D25
= 3.6 A
R
DS(on)
2.0
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150 C
500
V
V
DGR
T
J
= 25
C to 150 C; R
GS
= 1 M
500
V
V
GSS
30
V
V
GSM
40 V
I
D25
T
C
= 25
C
3.6
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
8
A
I
AR
T
C
= 25
C
3
A
E
AR
T
C
= 25
C
10
mJ
E
AS
T
C
= 25
C
180
mJ
dv/dt
I
S
I
DM
, di/dt
100 A/s, V
DD
V
DSS
,
10
V/ns
T
J
150 C, R
G
= 20
P
D
T
C
= 25
C
70
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
T
SOLD
Plastic body for 10 s
260
C
M
d
Mounting torque
(TO-220)
1.13/10 Nm/lb.in.
Weight
TO-220
4
g
TO-263
3
g
TO-252 0.8 g
TO-252 (IXTY)
G
S
(TAB)
G
S
(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 3N50P IXTP 3N50P
IXTY 3N50P
Symbol
Test Conditions Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
2.5
3.5
S
C
iss
409
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
48
pF
C
rss
6.1
pF
t
d(on)
15
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
15
ns
t
d(off)
R
G
= 20
(External)
38
ns
t
f
12
ns
Q
g(on)
9.3
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
3.3
nC
Q
gd
3.4
nC
R
thJC
1.8
C/W
R
thCS
(TO-220)
0.25
C/W
Source-Drain Diode Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
Min.
Typ.
Max.
I
S
V
GS
= 0 V
3
A
I
SM
Repetitive
5
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300 s, duty cycle d 2 %
t
rr
I
F
= 3 A, -di/dt = 100 A/
s
400
ns
V
R
= 100 V, V
GS
= 0 V
Pins: 1 - Gate
2 - Drain
3 - Source
4 - Drain
TO-220 (IXTP) Outline
TO-263 (IXTA) Outline
Dim. Millimeter
Inches
Min. Max.
Min.
Max.
A
2.19
2.38
0.086
0.094
A1
0.89
1.14
0.035
0.045
A2
0
0.13
0
0.005
b
0.64
0.89
0.025
0.035
b1
0.76
1.14
0.030
0.045
b2
5.21
5.46
0.205
0.215
c
0.46
0.58
0.018
0.023
c1
0.46
0.58
0.018
0.023
D
5.97
6.22
0.235
0.245
D1
4.32
5.21
0.170
0.205
E
6.35
6.73
0.250
0.265
E1
4.32
5.21
0.170
0.205
e
2.28 BSC
0.090 BSC
e1
4.57 BSC
0.180 BSC
H
9.40 10.42
0.370
0.410
L
0.51
1.02
0.020
0.040
L1
0.64
1.02
0.025
0.040
L2
0.89
1.27
0.035
0.050
L3
2.54
2.92
0.100
0.115
TO-252 AA (IXTY) Outline
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2
2006 IXYS All rights reserved
IXTA 3N50P IXTP 3N50P
IXTY 3N50P
Fig. 1. Output Characte ris tics
@ 25
C
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
0
1
2
3
4
5
6
V
D S
- V olts
I
D
-
A
m
per
e
s
V
GS
= 10V
8V
7V
6V
Fig. 2. Exte nde d Output Characte ris tics
@ 25
C
0
1
2
3
4
5
6
7
8
0
3
6
9
12
15
18
21
24
27
30
V
D S
- V olts
I
D
-
A
m
per
es
V
GS
= 10V
8V
7V
6V
Fig. 3. Output Characte r is tics
@ 125
C
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
0
2
4
6
8
10
12
V
D S
- V olts
I
D
- A
m
p
e
r
e
s
V
GS
= 10V
8V
7V
5V
6V
Fig. 4. R
D S(on
)
Nor m alize d to 0.5 I
D 25
V alue vs . Junction Te m pe ratur e
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D
S
(
o n )
- N
o
rm
a
l
i
z
e
d
I
D
= 3A
I
D
= 1.5A
V
GS
= 10V
Fig. 5. R
DS(on)
Norm alize d to
0.5 I
D25
V alue vs . I
D
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0
1
2
3
4
5
6
7
8
I
D
- A mperes
R
D
S
(
o
n )
- N
o
r
m
a
l
i
z
e
d
T
J
= 125
C
T
J
= 25
C
V
GS
= 10V
Fig. 6. Drain Curre nt vs . Cas e
Te m pe rature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
- A
m
p
e
re
s
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 3N50P IXTP 3N50P
IXTY 3N50P
Fig. 7. Input Adm ittance
0
1
2
3
4
5
6
4.5
5
5.5
6
6.5
7
V
G S
- V olts
I
D
-
A
m
per
e
s
T
J
= 125
C
25
C
-40
C
Fig. 8. Transconductance
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
I
D
- Amperes
g
f s
-
S
i
em
ens
T
J
= -40
C
25
C
125
C
Fig. 9. Sour ce Cur r e nt vs .
Sour ce -To-Dr ain V oltage
0
1
2
3
4
5
6
7
8
9
0.5 0.55
0.6 0.65
0.7 0.75
0.8 0.85
0.9 0.95
V
S D
- V olts
I
S
- A
m
p
e
r
e
s
T
J
= 125
C
T
J
= 25
C
Fig. 10. Gate Char ge
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
Q
G
- nanoCoulombs
V
G S
- V
o
l
t
s
V
DS
= 250V
I
D
= 1.5A
I
G
= 10m A
Fig. 11. Capacitance
1
10
100
1000
0
5
10
15
20
25
30
35
40
V
D S
- V olts
C
apac
i
t
anc
e -
pi
c
o
F
a
r
ads
C iss
C oss
C rs
f = 1MH z
Fig. 12. For w ar d-Bias
Safe Ope r ating Are a
0.1
1
10
10
100
1000
V
D S
- V olts
I
D
-
A
m
per
es
100s
1m s
D C
T
J
= 150C
T
C
= 25C
R
DS(on)
Lim it
10m s
25s
2006 IXYS All rights reserved
Fig. 13. Maximum Transient Thermal Resistance
0.1
1.0
10.0
0.1
1
10
100
1000
Pulse Width - milliseconds
R
( t h ) J C
-
C / W
IXTA 3N50P IXTP 3N50P
IXTY 3N50P
PDF 
ZIP