2002 IXYS All rights reserved
Symbol
Test Conditions Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
100
V
V
GS
Continuous
20
V
I
D25
T
C
= 25
C; Note 1
60
A
I
D90
T
C
= 90
C, Note 1
45
A
I
S25
T
C
= 25
C; Note 1, 2
60
A
I
S90
T
C
= 90
C, Note 1, 2
45
A
I
D(RMS)
Package lead current limit
45
A
E
AS
T
C
= 25
C
tlb
mJ
P
D
T
C
= 25
C
150
W
T
J
-55 ... +175
C
T
JM
175
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
V
ISOL
RMS leads-to-tab, 50/60 Hz, t = 1 minute
2500
V~
F
C
Mounting force
11 ... 65 / 2.4 ...11
N/lb
Weight
2
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
R
DS(on)
V
GS
= 10 V, I
D
= 45 A, Note 3
12.8
16.4 m
V
GS
= 10 V, I
D
= I
D90
, T
J
= 125
C Note 3
33
m
V
GS(th)
V
DS
= V
GS
, I
D
= 1 mA
2
4
V
I
DSS
V
DS
= V
DSS
T
J
= 25
C
10
A
V
GS
= 0 V
T
J
= 125
C
0.2
mA
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
200
nA
G = Gate,
D = Drain,
S = Source
* Patent pending
Trench Power MOSFET
IXUC 60N10
V
DSS
= 100 V
ISOPLUS220
TM
I
D25
= 60 A
Electrically Isolated Back Surface
R
DS(on)
= 16.4 m
98900 (2/02)
ISOPLUS 220
TM
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Trench MOSFET
- very low R
DS(on)
- fast switching
- usable intrinsic reverse diode
l
Low drain to tab capacitance(<15pF)
l
Unclamped Inductive Switching (UIS)
rated
Applications
l
Automotive 42V systems
- electronic switches to replace relays
and fuses
- choppers to replace series dropping
resistors used for motors, heaters, etc.
- inverters for AC drives, e.g. starter
generator
- DC-DC converters, e.g. 12V to 42V, etc.
l
Power supplies
- DC - DC converters
- Solar inverters
l
Battery powered systems
- choppers or inverters for motor control
in hand tools
- battery chargers
Advantages
l
Easy assembly: no screws or isolation
foils required
l
Space savings
l
High power density
G
D
S
Isolated back surface*
ADVANCE TECHNICAL INFORMATION
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715 6,306,728B1
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
Q
g(on)
110
nC
Q
gs
V
GS
= 10 V, V
DS
= 80 V, I
D
= 25 A
18
nC
Q
gd
94
nC
t
d(on)
35
ns
t
r
V
GS
= 10 V, V
DS
= 40 A
85
ns
t
d(off)
I
D
= 90 A, R
G
= 4.7
150
ns
t
f
70
ns
R
thJC
1
K/W
R
thCH
0.30
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
V
SD
I
F
= 30 A, V
GS
= 0 V
0.8
1.3
V
Note 3
t
rr
I
F
= 75 A, di/dt = -200 A/
s, V
DS
= 30 V
80
ns
Note: 1. MOSFET chip capability
2. Intrinsic diode capability
3. Pulse test, t
300
s, duty cycle d
2 %
IXUC 60N10
Note: All terminals are solder plated.
1 - Gate
2 - Drain
3 - Source
ISOPLUS220 OUTLINE
PDF 
ZIP