2000 IXYS All rights reserved
1 - 2
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, Conditions and dimensions.
A
C
A
TO-247 AD
A = Anode, C = Cathode , TAB = Cathode
A
A
C
C (TAB)
Features
International standard package
Very low V
F
Extremely low switching losses
Low I
RM
-values
Epoxy meets UL 94V-0
Applications
Rectifiers in switch mode power
supplies (SMPS)
Free wheeling diode in low voltage
converters
Advantages
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Dimensions see outlines.pdf
Power Schottky Rectifier
with common cathode
DSSK 40-0015B
Symbol
Conditions
Maximum Ratings
I
FRMS
50
A
I
FAV
T
C
= 135
C; rectangular, d = 0.5
20
A
I
FAV
T
C
= 135
C; rectangular, d = 0.5; per device
40
A
I
FSM
T
VJ
= 45C; t
p
= 10 ms (50 Hz), sine
350
A
E
AS
I
AS
= tbd A; L = 180 H; T
VJ
= 25C; non repetitive
tbd
mJ
I
AR
V
A
=1.5 V
RRM
typ.; f=10 kHz; repetitive
tbd
A
(dv/dt)
cr
tbd
V/
m
s
T
VJ
-55...+150
C
T
VJM
150
C
T
stg
-55...+150
C
P
tot
T
C
= 25
C
90
W
M
d
mounting torque
0.8...1.2
Nm
Weight
typical
6
g
I
FAV
= 2x20 A
V
RRM
= 15 V
V
F
= 0.32 V
007
V
RSM
V
RRM
Type
V
V
15
15
DSSK 40-0015B
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
T
VJ
= 25
C
V
R
= V
RRM
10
mA
T
VJ
= 100
C V
R
= V
RRM
200
mA
V
F
I
F
= 20 A;
T
VJ
= 125
C
0.32
V
I
F
= 20 A;
T
VJ
=
25
C
0.44
V
I
F
= 40 A;
T
VJ
= 125
C
0.41
V
R
thJC
1.4
K/W
R
thCH
0.25
K/W
Preliminary Data
2000 IXYS All rights reserved
2 - 2
0.0
0.2
0.4
0.6
1
10
100
0
2
4
6
8
10 12 14
0.1
1
10
100
1000
0
10
20
30
40
0
5
10
15
20
25
0.0001
0.001
0.01
0.1
1
10
0.01
0.1
1
0
40
80
120
160
0
10
20
30
40
50
60
I
F(AV)
T
C
C
I
F(AV)
t
s
K/W
10
100
1000
10000
100
1000
10000
I
FSM
t
P
A
0
2
4
6
8
10 12 14
100
1000
10000
C
T
I
R
I
F
A
V
F
V
R
V
R
V
pF
V
mA
A
P
(AV)
W
Z
thJC
V
Single Pulse
2
DSSK 40-0015B
A
s
T
VJ
=150C
125C
100C
75C
25C
T
VJ
=
150C
125C
25C
T
VJ
= 25C
d=0.5
d =
DC
0.5
0.33
0.25
0.17
0.08
0.08
D=0.5
0.17
DC
50C
0.33
0.25
Fig. 3 Typ. junction capacitance C
T
versus reverse voltage V
R
Fig. 2 Typ. value of reverse current I
R
versus reverse voltage V
R
Fig. 1 Maximum forward voltage
drop characteristics
Fig. 4 Average forward current I
F(AV)
versus case temperature T
C
Fig. 5 Forward power loss
characteristics
Fig. 6 Transient thermal impedance junction to case at various duty cycles
007
DSSK 40-0015B
Note: All curves are per diode
PDF 
ZIP