2004 IXYS All rights reserved
1 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
VBO 50
420
V
RSM
V
RRM
Type
V
V
800
800
VBO 50-08NO7
1200
1200
VBO 50-12NO7
1400
1400
VBO 50-14NO7
1600
1600
VBO 50-16NO7
1800
1800
VBO 50-18NO7*
Symbol
Conditions
Maximum Ratings
I
dAVM
T
C
= 64
C, module
50
A
I
FSM
T
VJ
= 45
C;
t = 10 ms (50 Hz), sine
750
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
820
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
670
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
740
A
I
2
t
T
VJ
= 45
C
t = 10 ms (50 Hz), sine
2800
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
2820
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
2250
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
2300
A
2
s
T
VJ
-40...+150
C
T
VJM
150
C
T
stg
-40...+150
C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
I
ISOL
1 mA
t = 1 s
3000
V~
M
d
Mounting torque (M5)
5
15%
Nm
44
15% lb.in.
Terminal connection torque (M5)
3
15%
Nm
26
15% lb.in.
Weight
typ.
260
g
Features
Package with screw terminals
Isolation voltage 3000 V~
Planar passivated chips
Blocking voltage up to 1800 V
Low forward voltage drop
UL registered E 72873
Applications
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power cycling
Symbol
Conditions
Characteristic Values
I
R
V
R
= V
RRM
;
T
VJ
= 25
C
0.3
mA
V
R
= V
RRM
;
T
VJ
= T
VJM
10.0
mA
V
F
I
F
= 150 A;
T
VJ
= 25
C
1.6
V
V
T0
For power-loss calculations only
0.85
V
r
T
T
VJ
= T
VJM
8
m
R
thJC
per diode; DC current
2.6
K/W
per module
0.65
K/W
R
thJK
per diode; DC current
2.84
K/W
per module
0.71
K/W
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747 refer to a single diode unless otherwise stated.
I
dAVM
= 50 A
V
RRM
= 800-1800 V
Single Phase
Rectifier Bridge
~
+
~
-
* delivery time on request
+
~
~
2004 IXYS All rights reserved
2 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
VBO 50
420
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current per diode
I
FSM
: Crest value. t: duration
Fig.5 Maximum forward current
at case temperature
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig. 3
i
2
dt versus time
(1-10ms) per diode or thyristor
Fig. 6 Transient thermal impedance per diode or thyristor, calculated
0.5
1
1.5
2
2.5
0
50
100
150
200
V [V]
F
I
F
[A]
1:T = 150
VJ
C
2:T = 25C
VJ
1
2
0.4
0.6
0.8
1
1.2
1.4
1.6
10
0
10
1
10
2
10
3
t[ms]
I (A)
FSM
TVJ=45C TVJ=150C
750 670
I
------
I
FSM
F(OV)
0 V
RRM
1/2 V
RRM
1 V
RRM
2
4
6
10
TVJ=45C
TVJ=150C
t [ms]
1
10
10
10
2
3
4
As
2
50
100
150
200
0
10
30
50
70
DC
sin.180
rec.120
c.60
re
.30
T (C)
C
I
dAV
[A]
0.01
0.1
1
10
1
2
3
4
K/W
Zth
t[s]
Z thJK
Z thJC
30
10
0
20
40
60
80
100
85
90
95
100
105
110
115
120
125
130
135
140
145
150
TC
C
DC
sin.180
rec.120
rec.60
rec.30
5.35
2.35
1.35
0.85
0.6 0.35
= RTHCA [K/W]
IFAVM
[A]
Tamb
[K]
0
50
100
150
[W]
PVTOT
PSB 55
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