2000 IXYS All rights reserved
1 - 2
I
FAV
= 3x 28 A
V
RRM
= 800-1600 V
Features
q
Package with metal base plate
q
Isolation voltage 3000 V~
q
Planar passivated chips
q
UL applied
" fast-on power terminals
Applications
q
Switching and control of
three phase AC circuits
q
Softstart AC motor controller
q
Solid state switches
q
Light and temperature control
Advantages
q
Easy to mount with two screws
q
Space and weight savings
q
Improved temperature and power
cycling
Symbol
Test Conditions
Maximum Ratings
I
FAVM
T
C
= 85
C, 50 - 400 Hz (per phase)
28
A
I
FRMS
T
C
= 85
C, 50 - 400 Hz (per phase)
43
A
I
TSM
T
VJ
= 45
C;
t = 10 ms (50 Hz), sine
550
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
600
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
500
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
550
A
i
2
dt
T
VJ
= 45
C
t = 10 ms (50 Hz), sine
1520
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
1520
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
1250
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
1250
A
2
s
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 25 A
150
A/
m
s
f =50 Hz, t
P
=200
m
s
V
D
= 2/3 V
DRM
I
G
= 0.45 A
non repetitive, I
T
= I
TAVM
500
A/
m
s
di
G
/dt = 0.45 A/
m
s
(dv/dt)
cr
T
VJ
= T
VJM
;
V
DR
= 2/3 V
DRM
1000
V/
m
s
R
GK
=
; method 1 (linear voltage rise)
P
GM
T
VJ
= T
VJM
t
p
=
30
m
s
10
W
I
T
= I
TAVM
t
p
= 300
m
s
5
W
P
GAVM
0.5
W
V
RGM
10
V
T
VJ
-40...+125
C
T
VJM
125
C
T
stg
-40...+125
C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
I
ISOL
1 mA
t = 1 s
3000
V~
M
d
Mounting torque (M5)
5
15 %
Nm
(10-32 UNF)
44
15 %
lb.in.
Weight
typ.
110
g
V
RSM
V
RRM
Type
V
DSM
V
DRM
V
V
800
800
VYK 70-08io7
1200
1200
VYK 70-12io7
1400
1400
VYK 70-14io7
1600
1600
VYK 70-16io7
Data according to IEC 60747 refer to a single diode/thyristor unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
Preliminary data
VYK 70
Three Thyristor Module
2
3
1
A
C
D
E
2000 IXYS All rights reserved
2 - 2
Symbol
Test Conditions
Characteristic Values
I
D
, I
R
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
5
mA
V
T
I
T
= 45 A; T
VJ
= 25
C
1.45
V
V
T0
For power-loss calculations only (T
VJ
= 125
C)
0.85
V
r
T
11
m
W
V
GT
V
D
= 6 V;
T
VJ
= 25
C
1.5
V
T
VJ
= -40
C
1.6
V
I
GT
V
D
= 6 V;
T
VJ
= 25
C
100
mA
T
VJ
= -40
C
200
mA
V
GD
T
VJ
= T
VJM
;
V
D
= 2/3 V
DRM
0.2
V
I
GD
5
mA
I
L
T
VJ
= 25
C; t
P
= 10
m
s
450
mA
I
G
= 0.45 A; di
G
/dt = 0.45 A/
m
s
I
H
T
VJ
= 25
C; V
D
= 6 V; R
GK
=
200
mA
t
gd
T
VJ
= 25
C; V
D
= 1/2 V
DRM
2
m
s
I
G
= 0.45 A; di
G
/dt = 0.45 A/
m
s
t
q
T
VJ
= T
VJM
; I
T
= 20 A, t
P
= 200
m
s; di/dt = -10 A/
m
s
typ.
150
m
s
V
R
= 100 V; dv/dt = 15 V/
m
s; V
D
= 2/3 V
DRM
R
thJC
per thyristor; sine 180
el
0.9
K/W
per module
0.15
K/W
R
thJH
per thyristor; sine 180
el
1.1
K/W
per module
0.183
K/W
d
S
Creeping distance on surface
16.1
mm
d
A
Creepage distance in air
6.0
mm
a
Max. allowable acceleration
50
m/s
2
VYK 70
Dimensions in mm (1 mm = 0.0394")
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