2000 IXYS All rights reserved
1 - 2
V
RSM
V
(BR)min
x
V
RRM
Anode
Cathode
V
V
V
on stud
on stud
900
-
800
DS
17-08A
DSI
17-08A
1300
-
1200
DS
17-12A
DSI
17-12A
1300
1300
1200
DSA
17-12A
DSAI
17-12A
1700
1750
1600
DSA
17-16A
DSAI
17-16A
1900
1950
1800
DSA
17-18A
DSAI
17-18A
x
Only for Avalanche Diodes
Symbol
Test Conditions
Maximum Ratings
I
F(RMS)
T
VJ
= T
VJM
40
A
I
F(AV)M
T
case
= 125
C; 180
sine
25
A
P
RSM
DSA(I) types, T
VJ
= T
VJM
, t
p
= 10
m
s
7
kW
I
FSM
T
VJ
= 45
C;
t = 10 ms (50 Hz), sine
370
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
400
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
300
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
320
A
I
2
t
T
VJ
= 45
C
t = 10 ms (50 Hz), sine
680
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
660
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
450
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
430
A
2
s
T
VJ
-40...+180
C
T
VJM
180
C
T
stg
-40...+180
C
M
d
Mounting torque
2.2-2.8
Nm
19-25
lb.in.
Weight
6
g
V
RRM
= 800-1800 V
I
F(RMS)
= 40 A
I
F(AV)M
= 25 A
Features
q
International standard package,
JEDEC DO-203 AA (DO-4)
q
Planar glassivated chips
Applications
q
Supplies for DC power equipment
q
DC supply for PWM inverter
q
Field supply for DC motors
q
Battery DC power supplies
Advantages
q
Space and weight savings
q
Simple mounting
q
Improved temperature and power
cycling
q
Reduced protection circuits
Symbol
Test Conditions
Characteristic Values
I
R
T
VJ
= T
VJM
; V
R
= V
RRM
4
mA
V
F
I
F
= 55 A; T
VJ
= 25
C
1.36
V
V
T0
For power-loss calculations only
0.85
V
r
T
T
VJ
= T
VJM
8
m
W
R
thJC
DC current
1.5
K/W
R
thJH
DC current
2.1
K/W
d
S
Creepage distance on surface
2.05
mm
d
A
Strike distance through air
2.05
mm
a
Max. allowable acceleration
100
m/s
2
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
DS
17
DSI
17
DSA 17
DSAI 17
Rectifier Diode
Avalanche Diode
A = Anode C = Cathode
DO-203 AA
10-32UNF
DS
DSI
DSA
DSAI
C
A
A
C
2000 IXYS All rights reserved
2 - 2
10
-3
10
-2
10
-1
10
0
0
100
200
300
400
2
3
4
5 6 7 8 9
1
10
200
400
600
800
100
1000
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0
20
40
60
80
100
0
10
20
30
40
50
0
10
20
30
40
50
0
50
100
150
200
0
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
1
2
I
2
t
I
FSM
A
I
F
A
V
F
t
s
t
ms
P
F
W
I
F(AV)M
A
T
amb
C
t
s
Z
thJH
K/W
A
2
s
0
50
100
150
0
10
20
30
40
I
F(AV)M
T
c
A
C
V
DS
17
DSI
17
DSA 17
DSAI 17
Fig. 6 Transient thermal impedance junction to heatsink
Fig. 1 Forward characteristics
Fig. 2 Surge overload current
I
FSM
: crest value, t: duration
Fig. 3 I
2
t versus time (1-10 ms)
Fig. 4 Power dissipation versus forward current and ambient temperature
Fig. 5 Max. forward current at case
temperature 180 sine
R
thJH
for various conduction angles d:
d
R
thJH
(K/W)
DC
2.10
180
2.23
120
2.33
60
2.53
30
2.72
Constants for Z
thJH
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.1006
0.0021
2
0.5311
0.0881
3
0.8683
2.968
4
0.600
3.20
typ. lim.
T
VJ
= 180C
T
VJ
= 25C
T
VJ
= 180C
T
VJ
= 45C
V
R
= 0 V
R
thJA
:
2.8 K/W
3.2 K/W
4,8 K/W
6.3 K/W
8.5 K/W
Cu 80x80
DC
180 sin
120
60
30
50Hz, 80% V
RRM
T
VJ
= 45C
T
VJ
= 180C
ase
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