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Электронный компонент: L532

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1 - 2
2004 IXYS All rights reserved
406
FII 30-06D
IXYS reserves the right to change limits, test conditions and dimensions.
Features
NPT IGBT
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
HiPerFRED
TM
diode
- optimized fast and soft reverse
recovery
- low operating forward voltage
- low leakage current
ISOPLUS i4-PAC
TM
package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered E 72873
Applications
single phaseleg
- buck-boost chopper
H bridge
- power supplies
- induction heating
- four quadrant DC drives
- controlled rectifier
three phase bridge
- AC drives
- controlled rectifier
I
C25
= 30 A
V
CES
= 600 V
V
CE(sat) typ.
= 1.9 V
IGBT phaseleg
in ISOPLUS i4-PAC
TM
IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
1
5
Preliminary data
3
5
4
1
2
IGBTs
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25C to 150C
600
V
V
GES
20
V
I
C25
T
C
= 25C
30
A
I
C90
T
C
= 90C
18
A
I
CM
V
GE
=
15 V; R
G
= 47
; T
VJ
= 125C
40
A
V
CEK
RBSOA, Clamped inductive load; L = 100 H
V
CES
t
SC
V
CE
= V
CES
; V
GE
=
15 V; R
G
= 47
; T
VJ
= 125C
10
s
(SCSOA)
non-repetitive
P
tot
T
C
= 25C
100
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 20 A; V
GE
= 15 V; T
VJ
= 25C
1.9
2.4
V
T
VJ
= 125C
2.2
V
V
GE(th)
I
C
= 0.5 mA; V
GE
= V
CE
4.5
6.5
V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25C
0.6
mA
T
VJ
= 125C
0.6
mA
I
GES
V
CE
= 0 V; V
GE
=
20 V
200
nA
t
d(on)
50
ns
t
r
55
ns
t
d(off)
300
ns
t
f
30
ns
E
on
0.92
mJ
E
off
0.68
mJ
C
ies
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
1.1
nF
Q
Gon
V
CE
= 300 V; V
GE
= 15 V; I
C
= 20 A
65
nC
R
thJC
1.25 K/W
R
thJH
with heat transfer paste
2.5
K/W
Inductive load, T
VJ
= 125C
V
CE
= 300 V; I
C
= 20 A
V
GE
= 15 V; R
G
= 47
2 - 2
2004 IXYS All rights reserved
406
FII 30-06D
IXYS reserves the right to change limits, test conditions and dimensions.
Dimensions in mm (1 mm = 0.0394")
Component
Symbol
Conditions
Maximum Ratings
T
VJ
-55...+150
C
T
stg
-55...+125
C
V
ISOL
I
ISOL
1 mA; 50/60 Hz
2500
V~
F
C
mounting force with clip
20...120
N
Symbol
Conditions
Characteristic Values
min.
typ.
max.
C
P
coupling capacity between shorted
40
pF
pins and mounting tab in the case
d
S
,d
A
pin - pin
1.7
mm
d
S
,d
A
pin - backside metal
5.5
mm
Weight
9
g
Diodes
Symbol
Conditions
Maximum Ratings
I
F25
T
C
= 25C
30
A
I
F90
T
C
= 90C
15
A
Symbol
Conditions
Characteristic Values
min.
typ.
max.
V
F
I
F
= 20 A; T
VJ
= 25C
2.3
2.7
V
T
VJ
= 125C
1.6
V
I
RM
I
F
= 15 A; di
F
/dt = -400 A/s; T
VJ
= 125C
7
A
t
rr
V
R
= 300 V; V
GE
= 0 V
50
ns
R
thJC
(per diode)
2.3 K/W
R
thJH
with heat transfer paste
4.6
K/W