2000 IXYS All rights reserved
1 - 4
Symbol
Test Conditions
Maximum Ratings
I
TRMS
, I
FRMS
T
VJ
= T
VJM
500
A
I
TAVM
, I
FAVM
T
C
= 85
C; 180
sine
320
A
I
TSM
, I
FSM
T
VJ
= 45
C;
t = 10 ms (50 Hz), sine
9200
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
9800
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
8000
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
8600
A
i
2
dt
T
VJ
= 45
C
t = 10 ms (50 Hz), sine
420 000
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
400 000
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
320 000
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
306 000
A
2
s
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 960 A
100
A/
m
s
f =50 Hz, t
P
=200
m
s
V
D
= 2/3 V
DRM
I
G
= 1 A
non repetitive, I
T
= 320 A
500
A/
m
s
di
G
/dt = 1 A/
m
s
(dv/dt)
cr
T
VJ
= T
VJM
;
V
DR
= 2/3 V
DRM
1000
V/
m
s
R
GK
=
; method 1 (linear voltage rise)
P
GM
T
VJ
= T
VJM
t
P
=
30
m
s
120
W
I
T
= I
TAVM
t
P
= 500
m
s
60
W
P
GAV
20
W
V
RGM
10
V
T
VJ
-40...+140
C
T
VJM
140
C
T
stg
-40...+125
C
V
ISOL
50/60 Hz, RMS
t = 1 min
3000
V~
I
ISOL
1 mA
t = 1 s
3600
V~
M
d
Mounting torque (M5)
2.5-5/22-44 Nm/lb.in.
Terminal connection torque (M8)
12-15/106-132 Nm/lb.in.
Weight
Typical including screws
320
g
V
RSM
V
RRM
Type
V
DSM
V
DRM
V
V
Version 1
Version 1
900
800
MCC 310-08io1
MCD 310-08io1
1300
1200
MCC 310-12io1
MCD 310-12io1
1500
1400
MCC 310-14io1
MCD 310-14io1
1700
1600
MCC 310-16io1
MCD 310-16io1
1900
1800
MCC 310-18io1
MCD 310-18io1
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
Features
q
International standard package
q
Direct copper bonded Al
2
O
3
-ceramic
base plate
q
Planar passivated chips
q
Isolation voltage 3600 V~
q
UL registered, E 72873
q
Keyed gate/cathode twin pins
Applications
q
Motor control
q
Power converter
q
Heat and temperature control for
industrial furnaces and chemical
processes
q
Lighting control
q
Contactless switches
Advantages
q
Space and weight savings
q
Simple mounting
q
Improved temperature and power
cycling
q
Reduced protection circuits
I
TRMS
= 2x 500 A
I
TAVM
= 2x 320 A
V
RRM
= 800-2200 V
030
MCC 310
MCD 310
Thyristor Modules
Thyristor/Diode Modules
7
6
5
4
2
3
1
MCD
MCC
3
6 7 1
5 4 2
3
1
5 4 2
2000 IXYS All rights reserved
2 - 4
Symbol
Test Conditions
Characteristic Values
I
RRM
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
70
mA
I
DRM
40
mA
V
T
, V
F
I
T
, I
F
= 600 A; T
VJ
= 25
C
1.32
V
V
T0
For power-loss calculations only (T
VJ
= 140
C)
0.8
V
r
T
0.82
m
W
V
GT
V
D
= 6 V;
T
VJ
= 25
C
2
V
T
VJ
= -40
C
3
V
I
GT
V
D
= 6 V;
T
VJ
= 25
C
150
mA
T
VJ
= -40
C
200
mA
V
GD
T
VJ
= T
VJM
;
V
D
= 2/3 V
DRM
0.25
V
I
GD
10
mA
I
L
T
VJ
= 25
C; t
P
= 30
m
s; V
D
= 6 V
200
mA
I
G
= 0.45 A; di
G
/dt = 0.45 A/
m
s
I
H
T
VJ
= 25
C; V
D
= 6 V; R
GK
=
150
mA
t
gd
T
VJ
= 25
C; V
D
= 1/2 V
DRM
2
m
s
I
G
= 1 A; di
G
/dt = 1 A/
m
s
t
q
T
VJ
= T
VJM
; I
T
= 300 A, t
P
= 200
m
s; -di/dt = 10 A/
m
s
typ. 200
m
s
V
R
= 100 V; dv/dt = 50 V/
m
s; V
D
= 2/3 V
DRM
Q
S
T
VJ
= 125
C; I
T
, I
F
= 400 A, -di/dt = 50 A/
m
s
760
m
C
I
RM
275
A
R
thJC
per thyristor/diode; DC current
0.112
K/W
per module
other values
0.056
K/W
R
thJK
per thyristor/diode; DC current
see Fig. 8/9
0.152
K/W
per module
0.076
K/W
d
S
Creepage distance on surface
12.7
mm
d
A
Strike distance through air
9.6
mm
a
Maximum allowable acceleration
50
m/s
2
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type ZY 180L (L = Left for pin pair 4/5)
UL 758, style 1385,
Type ZY 180R (R = right for pin pair 6/7)
CSA class 5851, guide 460-1-1
MCC 310
MCD 310
Dimensions in mm (1 mm = 0.0394")
MCC
MCD
Threaded spacer for higher Anode/
Cathode construction:
Type ZY 250, material brass
Fig. 1 Gate trigger characteristics
Fig. 2 Gate trigger delay time
20
12
14
2000 IXYS All rights reserved
3 - 4
Fig. 3 Surge overload current
I
TSM
, I
FSM
: Crest value, t: duration
Fig. 4
i
2
dt versus time (1-10 ms)
Fig. 4a Maximum forward current
at case temperature
Fig. 5
Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
MCC 310
MCD 310
2000 IXYS All rights reserved
4 - 4
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
MCC 310
MCD 310
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.00
0.05
0.10
0.15
0.20
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.00
0.05
0.10
0.15
t
s
Z
thJK
K/W
t
s
Z
thJC
K/W
30
DC
30
DC
0
0
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
Fig. 9 Transient thermal impedance
junction to
heatsink
(per
thyristor
or diode)
R
thJC
for various conduction angles d:
d
R
thJC
(K/W)
DC
0.112
180
C
0.113
120
C
0.114
60
C
0.115
30
C
0.115
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.003
0.099
2
0.0143
0.168
3
0.0947
0.456
R
thJK
for various conduction angles d:
d
R
thJK
(K/W)
DC
0.152
180
C
0.154
120
C
0.154
60
C
0.155
30
C
0.155
Constants for Z
thJK
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.003
0.099
2
0.0143
0.168
3
0.0947
0.456
4
0.04
1.36
835
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