2000 IXYS All rights reserved
1 - 4
120
60
20
10
Symbol
Test Conditions
Maximum Ratings
I
TRMS
T
VJ
= T
VJM
A
I
TAVM
T
C
= 85
C; 180
sine
A
I
TSM
T
VJ
= 45
C;
t = 10 ms (50 Hz)
A
V
R
= 0
t = 8.3 ms (60 Hz)
A
T
VJ
= T
VJM
t = 10 ms (50 Hz)
A
V
R
= 0
t = 8.3 ms (60 Hz)
A
i
2
dt
T
VJ
= 45
C
t = 10 ms (50 Hz)
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz)
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz)
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz)
A
2
s
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 750 A
100
A/
m
s
f = 50 Hz, t
P
= 200
m
s
V
D
= 2/3 V
DRM
I
G
= 1 A
non repetitive, I
T
= I
TAVM
500
A/
m
s
di
G
/dt = 1 A/
m
s
(dv/dt)
cr
T
VJ
= T
VJM
; V
DR
= 2/3 V
DRM
V/
m
s
R
GK
=
; method 1 (linear voltage rise)
P
GM
T
VJ
= T
VJM
t
P
=
30
m
s
W
I
T
= I
TAVM
t
P
= 500
m
s
W
P
GAV
W
V
RGM
V
T
VJ
C
T
VJM
C
T
stg
C
V
ISOL
50/60 Hz, RMS
t = 1 min
V~
I
ISOL
1 mA
t = 1 s
V~
M
d
Mounting torque (M6)
Nm/lb.in.
Terminal connection torque (M8)
Nm/lb.in.
Weight
Typical including screws
g
I
TRMS
= 2x 400 A
I
TAVM
= 2x 240 A
V
RRM
= 2000-2200 V
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
8000
8500
400
240
7000
7500
320000
303000
245000
240000
1000
-40 ...130
130
-40 ...125
3000
3600
4.5-7/40-62
11-13/97-115
750
Features
q
International standard package
q
Direct Copper Bonded Al
2
O
3
-ceramic
with copper base plate
q
Planar passivated chips
q
Isolation voltage 3600 V~
q
UL registered E 72873
q
Keyed gate/cathode twin pins
Applications
q
Motor control, softstarter
q
Power converter
q
Heat and temperature control for
industrial furnaces and chemical
processes
q
Lighting control
q
Solid state switches
Advantages
q
Simple mounting
q
Improved temperature and power
cycling
q
Reduced protection circuits
MCC 224
MCD 224
Thyristor Modules
Thyristor/Diode Modules
1
2
3
76
5
4
MCD
MCC
3
6 7 1
5 4 2
3
1
5 4 2
V
RSM
V
RRM
Type
V
DSM
V
DRM
V
V
2100
2000
MCC 224-20io1
MCD 224-20io1
2300
2200
MCC 224-22io1
MCD 224-22io1
024
2000 IXYS All rights reserved
2 - 4
Optional accessories for modules
Keyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type ZY 180 L (L = Left for pin pair 4/5)
UL 758, style 1385,
Type ZY 180 R (R = Right for pin pair 6/7)
CSA class 5851, guide 460-1-1
2
3
150
220
0.139
0.069
0.179
0.089
12.7
9.6
50
40
600
1.4
0.8
0.76
0.25
10
150
Symbol
Test Conditions
Characteristic Values
I
RRM
, I
DRM
T
VJ
= T
VJM
; V
R
= V
RRM
mA
V
T
I
T
=
A; T
VJ
= 25
C
V
V
T0
For power-loss calculations only (T
VJ
= T
VJM
)
V
r
T
m
W
V
GT
V
D
= 6 V;
T
VJ
= 25
C
V
T
VJ
= -40
C
V
I
GT
V
D
= 6 V;
T
VJ
= 25
C
mA
T
VJ
= -40
C
mA
V
GD
T
VJ
= T
VJM
; V
D
= 2/3 V
DRM
V
I
GD
T
VJ
= T
VJM
; V
D
= 2/3 V
DRM
mA
I
L
T
VJ
= 25
C; V
D
= 6 V; t
P
= 30
m
s
200
mA
di
G
/dt = 0.45 A/
m
s; I
G
= 0.45 A
I
H
T
VJ
= 25
C; V
D
= 6 V; R
GK
=
mA
t
gd
T
VJ
= 25
C; V
D
= 1/2 V
DRM
2
m
s
di
G
/dt = 1 A/
m
s; I
G
= 1 A
t
q
T
VJ
= T
VJM
; V
R
= 100 V; V
D
= 2/3 V
DRM
; t
P
= 200
m
s
typ. 200
m
s
dv/dt = 50 V/
m
s; I
T
= 300 A; -di/dt = 10 A/
m
s
Q
S
T
VJ
= T
VJM
760
m
C
I
RM
-di/dt = 50 A/
m
s; I
T
= 400 A
275
A
R
thJC
per thyristor; DC current
K/W
per module
K/W
R
thJK
per thyristor; DC current
K/W
per module
K/W
d
S
Creeping distance on surface
mm
d
A
Creepage distance in air
mm
a
Maximum allowable acceleration
m/s
2
Fig. 1 Gate trigger characteristics
0.01
0.1
1
10
1
10
100
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.1
1
10
I
G
V
G
A
A
I
G
1: I
GT
, T
VJ
= 140
C
2: I
GT
, T
VJ
= 25
C
3: I
GT
, T
VJ
= -40
C
s
t
gd
V
4: P
GM
= 20 W
5: P
GM
= 60 W
6: P
GM
= 120 W
I
GD
, T
VJ
= 140
C
4
2
1
5
6
Limit
typ.
T
VJ
= 25
C
3
0.01
0.1
1
10
1
10
100
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.1
1
10
I
G
V
G
A
A
I
G
1: I
GT
, T
VJ
= 130
C
2: I
GT
, T
VJ
= 25
C
3: I
GT
, T
VJ
= -40
C
s
t
gd
V
4: P
GM
= 20 W
5: P
GM
= 60 W
6: P
GM
= 120 W
I
GD
, T
VJ
= 130
C
4
2
1
5
6
Limit
typ.
T
VJ
= 25
C
3
Fig. 2 Gate trigger delay time
Dimensions in mm (1 mm = 0.0394")
MCC
MCD
M8x20
M8x20
MCC 224
MCD 224
2000 IXYS All rights reserved
3 - 4
0
25
50
75
100
125
150
0
100
200
300
0
100
200
300
400
500
0
25
50
75
100
125
150
1
10
10
4
10
5
10
6
0.001
0.01
0.1
1
0
2000
4000
6000
8000
0
200
400
600
0
500
1000
1500
2000
I
2
t
I
TAVM
I
dAVM
A
P
tot
W
T
A
T
C
s
t
ms
t
A
2
s
0
25
50
75
100
125
150
0
50
100
150
200
250
300
350
400
I
TSM
A
A
C
I
TAVM
W
P
tot
A
C
0.8
1
0.2
0.3
0.4
0.6
R
thKA
K/W
0.1
0.2
0.15
0.1
0.08
0.05
0.03
0.3
C
3xMCC224
Circuit
B6
T
A
R
thKA
K/W
180 sin
120
60
30
DC
180 sin
120
60
30
DC
V
R
= 0V
80 % V
RRM
50 Hz
Fig. 5
Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
Fig. 3 Surge overload current
I
TSM
: Crest value, t: duration
Fig. 4 I
2
t versus time (1-10 ms)
Fig. 4a Maximum forward current
at case temperature
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
T
VJ
= 45C
T
VJ
= 130C
T
VJ
= 45C
T
VJ
= 130C
745
MCC 224
MCD 224
2000 IXYS All rights reserved
4 - 4
t
Z
thJK
s
t
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.00
0.05
0.10
0.15
0.20
0.25
0.30
K/W
Z
thJC
I
RMS
P
tot
0
25
50
75
100
125
150
0
100
200
300
400
500
0
500
1000
1500
2000
A
3xMCC224
Circuit
W3
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.00
0.05
0.10
0.15
0.20
0.25
DC
DC
180
120
60
30
C
T
A
W
K/W
s
30
60
120
180
0.2
0.15
0.1
0.08
0.05
0.03
0.3
R
thKA
K/W
Fig. 9 Transient thermal impedance
junction to
heatsink
(per
thyristor
or diode)
R
thJK
for various conduction angles d:
d
R
thJK
(K/W)
DC
0.179
180
0.188
120
0.196
60
0.216
30
0.256
Constants for Z
thJK
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.0067
0.00054
2
0.0358
0.098
3
0.0832
0.54
4
0.0129
12
5
0.04
12
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
R
thJC
for various conduction angles d:
d
R
thJC
(K/W)
DC
0.139
180
0.148
120
0.156
60
0.176
30
0.214
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.0067
0.00054
2
0.0358
0.098
3
0.0832
0.54
4
0.0129
12
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
745
MCC 224
MCD 224
PDF 
ZIP