2004 IXYS All rights reserved
1 - 4
MCC 56
MCD 56
419
Symbol
Conditions
Maximum Ratings
I
TRMS
, I
FRMS
T
VJ
= T
VJM
100
A
I
TAVM
, I
FAVM
T
C
= 83C; 180 sine
64
A
T
C
= 85C; 180 sine
60
A
I
TSM
, I
FSM
T
VJ
= 45C;
t = 10 ms (50 Hz), sine
1500
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
1600
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
1350
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
1450
A
i
2
dt
T
VJ
= 45C
t = 10 ms (50 Hz), sine
11 200
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
10 750
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
9100
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
8830
A
2
s
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 150 A
150
A/s
f =50 Hz, t
P
= 200 s
V
D
=
2
/
3
V
DRM
I
G
= 0.45 A
non repetitive, I
T
= I
TAVM
500
A/s
di
G
/dt = 0.45 A/s
(dv/dt)
cr
T
VJ
= T
VJM
;
V
DR
=
2
/
3
V
DRM
1000
V/s
R
GK
=
; method 1 (linear voltage rise)
P
GM
T
VJ
= T
VJM
;
t
P
=
30 s
10
W
I
T
= I
TAVM
;
t
P
= 300 s
5
W
P
GAV
0.5
W
V
RGM
10
V
T
VJ
-40...+125
C
T
VJM
125
C
T
stg
-40...+125
C
V
ISOL
50/60 Hz, RMS;
t = 1 min
3000
V~
I
ISOL
1 mA;
t = 1 s
3600
V~
M
d
Mounting torque (M5)
2.5-4.0/22-35 Nm/lb.in.
Terminal connection torque (M5)
2.5-4.0/22-35 Nm/lb.in.
Weight
Typical including screws
90
g
I
TRMS
= 2x100 A
I
TAVM
= 2x64 A
V
RRM
= 800-1800 V
Thyristor Modules
Thyristor/Diode Modules
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
Features
International standard package,
JEDEC TO-240 AA
Direct copper bonded Al
2
O
3
-ceramic
base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 72873
Gate-cathode twin pins for version 1B
Applications
DC motor control
Softstart AC motor controller
Light, heat and temperature control
Advantages
Space and weight savings
Simple mounting with two screws
Improved temperature and power cycling
Reduced protection circuits
6
7
4
5
3
2
1
TO-240 AA
V
RSM
V
RRM
Type
V
DSM
V
DRM
V
V
Version
1 B
8 B
Version
1 B
8 B
900
800
MCC 56-08 io1 B / io8 B
MCD 56-08 io1 B / io8 B
1300
1200
MCC 56-12 io1 B / io8 B
MCD 56-12 io1 B / io8 B
1500
1400
MCC 56-14 io1 B / io8 B
MCD 56-14 io1 B / io8 B
1700
1600
MCC 56-16 io1 B / io8 B
MCD 56-16 io1 B / io8 B
1900
1800
MCC 56-18 io1 B / io8 B
MCD 56-18 io1 B / io8 B
3
1
5 4 2
MCD
Version 1 B
MCC
Version 8 B
3
6
1
5 2
MCD
Version 8 B
3
1
5 2
MCC
Version 1 B
3
6 7 1
5 4 2
2004 IXYS All rights reserved
2 - 4
MCC 56
MCD 56
419
Symbol
Conditions
Characteristic Values
I
RRM
, I
DRM
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
5
mA
V
T
, V
F
I
T
/I
F
= 200 A; T
VJ
= 25C
1.57
V
V
T0
For power-loss calculations only (T
VJ
= 125C)
0.85
V
r
T
3.7
m
V
GT
V
D
= 6 V;
T
VJ
= 25C
1.5
V
T
VJ
= -40C
1.6
V
I
GT
V
D
= 6 V;
T
VJ
= 25C
100
mA
T
VJ
= -40C
200
mA
V
GD
T
VJ
= T
VJM
; V
D
=
2
/
3
V
DRM
0.2
V
I
GD
10
mA
I
L
T
VJ
= 25C; t
P
= 10 s; V
D
= 6 V
450
mA
I
G
= 0.45 A; di
G
/dt = 0.45 A/s
I
H
T
VJ
= 25C; V
D
= 6 V; R
GK
=
200
mA
t
gd
T
VJ
= 25C; V
D
= V
DRM
2
s
I
G
= 0.45 A; di
G
/dt = 0.45 A/s
t
q
T
VJ
= T
VJM
; I
T
= 150 A, t
P
= 200 s; -di/dt = 10 A/s typ. 150
s
V
R
= 100 V; dv/dt = 20 V/s; V
D
=
2
/
3
V
DRM
Q
S
T
VJ
= T
VJM
; I
T
, I
F
= 50 A, -di/dt = 3 A/s
100
C
I
RM
24
A
R
thJC
per thyristor/diode; DC current
0.45
K/W
per module
other values
0.225
K/W
R
thJK
per thyristor/diode; DC current
see Fig. 8/9
0.65
K/W
per module
0.325
K/W
d
S
Creepage distance on surface
12.7
mm
d
A
Strike distance through air
9.6
mm
a
Maximum allowable acceleration
50
m/s
2
Optional accessories for module-type MCC 56 version 1 B
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type ZY 200L (L = Left for pin pair 4/5)
UL 758, style 1385,
Type ZY 200R (R = right for pin pair 6/7)
CSA class 5851, guide 460-1-1
Dimensions in mm (1 mm = 0.0394")
MCC / MCD / MDC Version 1 B
MCC Version 8 B
MCD Version 8 B
10
100
1000
1
10
100
1000
10
0
10
1
10
2
10
3
10
4
0.1
1
10
I
G
V
G
mA
mA
I
G
1: I
GT
, T
VJ
= 125
C
2: I
GT
, T
VJ
= 25
C
3: I
GT
, T
VJ
= -40
C
s
t
gd
V
4: P
GAV
= 0.5 W
5: P
GM
= 5 W
6: P
GM
= 10 W
I
GD
, T
VJ
= 125
C
3
4
2
1
5
6
Limit
typ.
T
VJ
= 25
C
Fig. 1 Gate trigger characteristics
Fig. 2 Gate trigger delay time
Version 1 or 8 without B in typ designation = without insert in mountig holes
2004 IXYS All rights reserved
3 - 4
MCC 56
MCD 56
419
Fig. 3 Surge overload current
I
TSM
, I
FSM
: Crest value, t: duration
Fig. 4
i
2
dt versus time (1-10 ms)
Fig. 4a Maximum forward current
at case temperature
Fig. 5
Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
2004 IXYS All rights reserved
4 - 4
MCC 56
MCD 56
419
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
Fig. 9 Transient thermal impedance
junction to
heatsink
(per
thyristor
or diode)
R
thJK
for various conduction angles d:
d
R
thJK
(K/W)
DC
0.65
180
0.67
120
0.69
60
0.705
30
0.72
Constants for Z
thJK
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.014
0.015
2
0.026
0.0095
3
0.41
0.175
4
0.2
0.67
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.014
0.015
2
0.026
0.0095
3
0.41
0.175
R
thJC
for various conduction angles d:
d
R
thJC
(K/W)
DC
0.45
180
0.47
120
0.49
60
0.505
30
0.52
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