2004 IXYS All rights reserved
1 - 4
IXYS reserves the right to change limits, test conditions and dimensions
4
1
9
MCC 72
MCD 72
I
TRMS
= 2x180 A
I
TAVM
= 2x115 A
V
RRM
= 800-1800 V
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
Features
International standard package,
JEDEC TO-240 AA
Direct copper bonded Al
2
O
3
-ceramic
base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 72873
Gate-cathode twin pins for version 1B
Applications
DC motor control
Softstart AC motor controller
Light, heat and temperature control
Advantages
Space and weight savings
Simple mounting with two screws
Improved temperature and power cycling
Reduced protection circuits
Symbol
Conditions
Maximum Ratings
I
TRMS
, I
FRMS
T
VJ
= T
VJM
180
A
I
TAVM
, I
FAVM
T
C
= 63C; 180 sine
115
A
T
C
= 85C; 180 sine
85
A
I
TSM
, I
FSM
T
VJ
= 45C
t = 10 ms (50 Hz), sine
1700
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
1800
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
1540
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
1640
A
i
2
dt
T
VJ
= 45C
t = 10 ms (50 Hz), sine
14 450
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
13 500
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
11 850
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
11 300
A
2
s
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 250 A
150
A/s
f = 50 Hz; t
P
=200 s
V
D
=
2
/
3
V
DRM
I
G
= 0.45 A
non repetitive, I
T
= I
TAVM
500
A/s
di
G
/dt = 0.45 A/s
(dv/dt)
cr
T
VJ
= T
VJM
;
V
DR
=
2
/
3
V
DRM
1000
V/s
R
GK
=
; method 1 (linear voltage rise)
P
GM
T
VJ
= T
VJM
;
t
P
=
30 s
10
W
I
T
= I
TAVM
;
t
P
= 300 s
5
W
P
GAV
0.5
W
V
RGM
10
V
T
VJ
-40...+125
C
T
VJM
125
C
T
stg
-40...+125
C
V
ISOL
50/60 Hz, RMS;
t = 1 min
3000
V~
I
ISOL
1 mA;
t = 1 s
3600
V~
M
d
Mounting torque (M5)
2.5-4.0/22-35 Nm/lb.in.
Terminal connection torque (M5)
2.5-4.0/22-35 Nm/lb.in.
Weight
Typical including screws
90
g
Thyristor Modules
Thyristor/Diode Modules
6
7
4
5
3
2
1
TO-240 AA
MCD
Version 8 B
MCC
Version 8 B
MCC
Version 1 B
3
6 7 1
5 4 2
3
6
1
5 2
3
1
5 2
3
1
5 4 2
MCD
Version 1 B
V
RSM
V
RRM
Type
V
DSM
V
DRM
V
V
Version
1 B
8 B
Version
1 B
8 B
900
800
MCC 72-08 io1 B / io8 B
MCD 72-08 io1 B / io8 B
1300
1200
MCC 72-12 io1 B / io8 B
MCD 72-12 io1 B / io8 B
1500
1400
MCC 72-14 io1 B / io8 B
MCD 72-14 io1 B / io8 B
1700
1600
MCC 72-16 io1 B / io8 B
MCD 72-16 io1 B / io8 B
1900
1800
MCC 72-18 io1 B / io8 B
MCD 72-18 io1 B / io8 B
2004 IXYS All rights reserved
2 - 4
IXYS reserves the right to change limits, test conditions and dimensions
4
1
9
MCC 72
MCD 72
Symbol
Conditions
Characteristic Values
I
RRM
, I
DRM
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
5
mA
V
T
/V
F
I
T
/I
F
= 300 A; T
VJ
= 25C
1.74
V
V
T0
For power-loss calculations only (T
VJ
= 125C)
0.85
V
r
T
3.2
m
V
GT
V
D
= 6 V;
T
VJ
= 25C
2.5
V
T
VJ
= -40C
2.6
V
I
GT
V
D
= 6 V;
T
VJ
= 25C
150
mA
T
VJ
= -40C
200
mA
V
GD
T
VJ
= T
VJM
;
V
D
=
2
/
3
V
DRM
0.2
V
I
GD
10
mA
I
L
T
VJ
= 25C; t
P
= 10 s; V
D
= 6 V
450
mA
I
G
= 0.45 A; di
G
/dt = 0.45 A/s
I
H
T
VJ
= 25C; V
D
= 6 V; R
GK
=
200
mA
t
gd
T
VJ
= 25C; V
D
= V
DRM
2
s
I
G
= 0.45 A; di
G
/dt = 0.45 A/s
t
q
T
VJ
= T
VJM
; I
T
= 150 A, t
P
= 200 s; -di/dt = 10 A/s typ. 185
s
V
R
= 100 V; dv/dt = 20 V/s; V
D
=
2
/
3
V
DRM
Q
S
T
VJ
= T
VJM
; I
T
/I
F
= 50 A, -di/dt = 6 A/s
170
C
I
RM
45
A
R
thJC
per thyristor/diode; DC current
0.3
K/W
per module
other values
0.15
K/W
R
thJK
per thyristor/diode; DC current
see Fig. 8/9
0.5
K/W
per module
0.25
K/W
d
S
Creepage distance on surface
12.7
mm
d
A
Strike distance through air
9.6
mm
a
Maximum allowable acceleration
50
m/s
2
Optional accessories for module-type MCC 72 version 1 B
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type ZY 200L (L = Left for pin pair 4/5)
UL 758, style 1385,
Type ZY 200R (R = right for pin pair 6/7)
CSA class 5851, guide 460-1-1
Dimensions in mm (1 mm = 0.0394")
MCC / MCD Version 1 B
MCC Version 8 B
MCD Version 8 B
Fig. 1 Gate trigger characteristics
Fig. 2 Gate trigger delay time
2004 IXYS All rights reserved
3 - 4
IXYS reserves the right to change limits, test conditions and dimensions
4
1
9
MCC 72
MCD 72
Fig. 3 Surge overload current
I
TSM
, I
FSM
: Crest value, t: duration
Fig. 4
i
2
dt versus time (1-10 ms)
Fig. 4a Maximum forward current
at case temperature
Fig. 5
Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
2004 IXYS All rights reserved
4 - 4
IXYS reserves the right to change limits, test conditions and dimensions
4
1
9
MCC 72
MCD 72
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
Fig. 9 Transient thermal impedance
junction to
heatsink
(per
thyristor
or diode)
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.008
0.0019
2
0.054
0.047
3
0.238
0.3
Constants for Z
thJK
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.008
0.0019
2
0.054
0.047
3
0.238
0.3
4
0.2
1.25
R
thJK
for various conduction angles d:
d
R
thJK
(K/W)
DC
0.5
180
0.51
120
0.53
60
0.55
30
0.57
R
thJC
for various conduction angles d:
d
R
thJC
(K/W)
DC
0.3
180
0.31
120
0.33
60
0.35
30
0.37
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