2004 IXYS All rights reserved
1 - 3
MDD 220
IXYS reserves the right to change limits, test conditions and dimensions
419
I
FRMS
= 2x450 A
I
FAVM
= 2x270 A
V
RRM
= 800-1800 V
Symbol
Test Conditions
Characteristic Values
I
RRM
T
VJ
= T
VJM
; V
R
= V
RRM
40
mA
V
F
I
F
= 600 A; T
VJ
= 25
C
1.4
V
V
T0
For power-loss calculations only
0.75
V
r
T
T
VJ
= T
VJM
0.9
m
R
thJC
per diode; DC current
0.129
K/W
per module
other values
0.065
K/W
R
thJK
per diode; DC current
see Fig. 6/7
0.169
K/W
per module
0.0845
K/W
Q
S
T
VJ
= 125
C, I
F
= 400 A; -di/dt = 50 A/
s
760
C
I
RM
275
A
d
S
Creepage distance on surface
12.7
mm
d
A
Strike distance through air
9.6
mm
a
Maximum allowable acceleration
50
m/s
2
V
RSM
V
RRM
Type
V
V
900
800
MDD 220-08N1
1300
1200
MDD 220-12N1
1500
1400
MDD 220-14N1
1700
1600
MDD 220-16N1
1900
1800
MDD 220-18N1
Symbol
Conditions
Maximum Ratings
I
FRMS
T
VJ
= T
VJM
450
A
I
FAVM
T
C
= 100
C; 180 sine
270
A
I
FSM
T
VJ
= 45
C;
t = 10 ms (50 Hz), sine
8500
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
9000
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
7500
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
8000
A
i
2
dt
T
VJ
= 45
C
t = 10 ms (50 Hz), sine
360 000
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
340 000
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
280 000
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
260 000
A
2
s
T
VJ
-40...+150
C
T
VJM
150
C
T
stg
-40...+125
C
V
ISOL
50/60 Hz, RMS
t = 1 min
3000
V~
I
ISOL
1 mA
t = 1 s
3600
V~
M
d
Mounting torque (M5)
2.5-5/22-44 Nm/lb.in.
Terminal connection torque (M8)
12-15/106-132 Nm/lb.in.
Weight
Typical including screws
320
g
Features
Direct copper bonded Al
2
O
3
-ceramic
base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 72873
Applications
Supplies for DC power equipment
DC supply for PWM inverter
Field supply for DC motors
Battery DC power supplies
Advantages
Space and weight savings
Simple mounting
Improved temperature and power cycling
Reduced protection circuits
Threaded spacer for higher Anode/Cathode
construction: Type ZY 250, material brass
14
High Power
Diode Modules
3
1
2
1
3
2
Dimensions in mm (1 mm = 0.0394")
20
12
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
2004 IXYS All rights reserved
2 - 3
MDD 220
IXYS reserves the right to change limits, test conditions and dimensions
419
Fig. 1 Surge overload current
I
FSM
: Crest value, t: duration
Fig. 2
i
2
dt versus time (1-10 ms)
Fig. 2a Maximum forward current
at case temperature
Fig. 3
Power dissipation versus
forward current and ambient
temperature (per diode)
Fig. 4 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
2004 IXYS All rights reserved
3 - 3
MDD 220
IXYS reserves the right to change limits, test conditions and dimensions
419
Fig. 5 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
Fig. 6 Transient thermal impedance
junction to case (per diode)
Fig. 7 Transient thermal impedance
junction to
heatsink
(per diode)
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.00
0.05
0.10
0.15
0.20
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.00
0.05
0.10
0.15
t
s
Z
thJK
K/W
t
s
Z
thJC
K/W
30
DC
0
0
30
DC
Constants for Z
thJK
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.0035
0.0099
2
0.0165
0.168
3
0.1091
0.456
4
0.04
1.36
R
thJK
for various conduction angles d:
d
R
thJK
(K/W)
DC
0.169
180
0.171
120
0.172
60
0.172
30
0.173
R
thJC
for various conduction angles d:
d
R
thJC
(K/W)
DC
0.129
180
0.131
120
0.132
60
0.132
30
0.133
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.0035
0.0099
2
0.0165
0.168
3
0.1091
0.456
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