2000 IXYS All rights reserved
1 - 3
I
FRMS
= 2x 450 A
I
FAVM
= 2x 290 A
V
RRM
= 800-1600 V
Symbol
Test Conditions
Characteristic Values
I
RRM
T
VJ
= T
VJM
; V
R
= V
RRM
40
mA
V
F
I
F
= 600 A; T
VJ
= 25
C
1.3
V
V
T0
For power-loss calculations only
0.75
V
r
T
T
VJ
= T
VJM
0.75
m
W
R
thJC
per diode; DC current
0.129
K/W
per module
other values
0.065
K/W
R
thJK
per diode; DC current
see Fig. 6/7
0.169
K/W
per module
0.0845
K/W
Q
S
T
VJ
= 125
C, I
F
= 400 A; -di/dt = 50 A/
m
s
760
m
C
I
RM
275
A
d
S
Creepage distance on surface
12.7
mm
d
A
Strike distance through air
9.6
mm
a
Maximum allowable acceleration
50
m/s
2
V
RSM
V
RRM
Type
V
V
900
800
MDD 250-08N1
1300
1200
MDD 250-12N1
1500
1400
MDD 250-14N1
1700
1600
MDD 250-16N1
Symbol
Test Conditions
Maximum Ratings
I
FRMS
T
VJ
= T
VJM
450
A
I
FAVM
T
C
= 100
C; 180
sine
290
A
I
FSM
T
VJ
= 45
C;
t = 10 ms (50 Hz), sine
11 000
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
11 700
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
9000
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
9600
A
i
2
dt
T
VJ
= 45
C
t = 10 ms (50 Hz), sine
605 000
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
560 000
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
405 000
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
380 000
A
2
s
T
VJ
-40...+150
C
T
VJM
150
C
T
stg
-40...+125
C
V
ISOL
50/60 Hz, RMS
t = 1 min
3000
V~
I
ISOL
1 mA
t = 1 s
3600
V~
M
d
Mounting torque (M5)
2.5-5/22-44 Nm/lb.in.
Terminal connection torque (M8)
12-15/106-132 Nm/lb.in.
Weight
Typical including screws
320
g
MDD 250
High Power
Diode Modules
3
1
2
1
3
2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
Features
q
Direct copper bonded Al
2
O
3
-ceramic
base plate
q
Planar passivated chips
q
Isolation voltage 3600 V~
q
UL registered, E 72873
Applications
q
Supplies for DC power equipment
q
DC supply for PWM inverter
q
Field supply for DC motors
q
Battery DC power supplies
Advantages
q
Space and weight savings
q
Simple mounting
q
Improved temperature and power
cycling
q
Reduced protection circuits
Threaded spacer for higher Anode/Cathode
construction: Type ZY 250, material brass
14
Dimensions in mm (1 mm = 0.0394")
20
12
936
2000 IXYS All rights reserved
2 - 3
MDD 250
Fig. 1 Surge overload current
I
FSM
: Crest value, t: duration
Fig. 2
i
2
dt versus time (1-10 ms)
Fig. 2a Maximum forward current
at case temperature
Fig. 3
Power dissipation versus
forward current and ambient
temperature (per diode)
Fig. 4 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
2000 IXYS All rights reserved
3 - 3
Fig. 5 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
MDD 250
Fig. 6 Transient thermal impedance
junction to case (per diode)
Fig. 7 Transient thermal impedance
junction to
heatsink
(per diode)
R
thJK
for various conduction angles d:
d
R
thJK
(K/W)
DC
0.169
180
0.171
120
0.172
60
0.172
30
0.173
Constants for Z
thJK
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.0035
0.0099
2
0.0165
0.168
3
0.1091
0.456
4
0.04
1.36
R
thJC
for various conduction angles d:
d
R
thJC
(K/W)
DC
0.129
180
0.131
120
0.132
60
0.132
30
0.133
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.0035
0.0099
2
0.0165
0.168
3
0.1091
0.456
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.00
0.05
0.10
0.15
0.20
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.00
0.05
0.10
0.15
t
s
Z
thJK
K/W
t
s
Z
thJC
K/W
30
DC
0
0
30
DC
838
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