2000 IXYS All rights reserved
1 - 3
V
RSM
V
RRM
Type
V
DSM
V
DRM
V
V
1300
1200
MDD 255-12N1
1500
1400
MDD 255-14N1
1700
1600
MDD 255-16N1
1900
1800
MDD 255-18N1
2100
2000
MDD 255-20N1
2300
2200
MDD 255-22N1
I
FRMS
= 2x 450 A
I
FAVM
= 2x 270 A
V
RRM
= 1200-2200 V
Features
q
International standard package
q
Direct copper bonded Al
2
O
3
-ceramic
with copper base plate
q
Planar passivated chips
q
Isolation voltage 3600 V~
q
UL registered E 72873
Applications
q
Supplies for DC power equipment
q
DC supply for PWM inverter
q
Field supply for DC motors
q
Battery DC power supplies
Advantages
q
Simple mounting
q
Improved temperature and power
cycling
q
Reduced protection circuits
Symbol
Test Conditions
Maximum Ratings
I
FRMS
T
VJ
= T
VJM
450
A
I
FAVM
T
C
= 100
C; 180
sine
270
A
I
FSM
T
VJ
= 45
C;
t = 10 ms (50 Hz)
9500
A
V
R
= 0
t = 8.3 ms (60 Hz)
10200
A
T
VJ
= T
VJM
t = 10 ms (50 Hz)
8400
A
V
R
= 0
t = 8.3 ms (60 Hz)
9000
A
i
2
dt
T
VJ
= 45
C
t = 10 ms (50 Hz)
451 000
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz)
437 000
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz)
353 000
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz)
340 000
A
2
s
T
VJ
-40...+150
C
T
VJM
150
C
T
stg
-40...+125
C
V
ISOL
50/60 Hz, RMS
t = 1 min
3000
V~
I
ISOL
1 mA
t = 1 s
3600
V~
M
d
Mounting torque (M6)
4.5-7/40-62 Nm/lb.in.
Terminal connection torque (M8)
11-13/97-115 Nm/lb.in.
Weight
Typical including screws
750
g
Symbol
Test Conditions
Characteristic Values
I
RRM
T
VJ
= T
VJM
; V
R
= V
RRM
30
mA
V
F
I
F
= 600 A; T
VJ
= 25
C
1.4
V
V
T0
For power-loss calculations only
0.8
V
r
T
T
VJ
= T
VJM
0.6
m
W
R
thJC
per diode; DC current
0.140
K/W
per module
other values
0.07
K/W
R
thJK
per diode; DC current
see MCC 255
0.18
K/W
per module
0.09
K/W
Q
S
T
VJ
= 125
C; I
F
= 400 A; -di/dt = 50 A/
m
s
700
m
C
I
RM
260
A
d
S
Creeping distance on surface
12.7
mm
d
A
Creepage distance in air
9.6
mm
a
Maximum allowable acceleration
50
m/s
2
MDD 255
749
High Power
Diode Modules
3
1
2
1
2
3
Dimensions in mm (1 mm = 0.0394")
M8x20
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
2000 IXYS All rights reserved
2 - 3
0
25
50
75
100
125
150
0
100
200
300
400
0
100
200
300
400
500
0
25
50
75
100
125
150
1
10
10
5
10
6
0.001
0.01
0.1
1
0
2000
4000
6000
8000
10000
0
100
200
300
400
500
0
250
500
750
1000
1250
1500
I
2
t
I
FAVM
I
dAVM
A
P
tot
W
T
A
T
C
s
t
ms
t
A
2
s
0
25
50
75
100
125
150
0
50
100
150
200
250
300
350
400
450
500
I
FSM
A
A
C
I
FAVM
W
P
tot
A
C
0.8
1.2
0.2
0.3
0.4
0.6
R
thKA
K/W
0.1
0.15
0.08
0.06
C
2 x MDD255
Circuit
B2U
T
A
R
thKA
K/W
180 sin
120
60
30
DC
180 sin
120
60
30
DC
V
R
= 0V
80 % V
RRM
T
VJ
= 45C
T
VJ
= 150C
50 Hz
T
VJ
= 150C
T
VJ
= 45C
R
L
0.5
0.1
0.2
0.3
Fig. 1 Surge overload current
I
FSM
: Crest value, t: duration
Fig. 2 I
2
t versus time (1-10 ms)
Fig. 3
Maximum forward current
at case temperature
Fig. 4
Power dissipation versus
forward current and ambient
temperature (per diode)
Fig. 5 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
MDD 255
808
2000 IXYS All rights reserved
3 - 3
t
Z
thJK
s
t
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.00
0.05
0.10
0.15
0.20
0.25
0.30
K/W
Z
thJC
I
dAVM
P
tot
0
25
50
75
100
125
150
0
200
400
600
800
0
500
1000
1500
2000
2500
A
3 x MDD255
Circuit
B6U
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.00
0.05
0.10
0.15
0.20
0.25
DC
DC
180
120
60
30
C
T
A
W
K/W
s
30
60
120
180
0.3
0.2
0.15
0.1
0.06
0.03
0.4
R
thKA
K/W
MDD 255
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
Fig. 7 Transient thermal impedance
junction to case (per diode)
R
thJC
for various conduction angles d:
d
R
thJC
(K/W)
DC
0.139
180
0.148
120
0.156
60
0.176
30
0.214
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.0066
0.00054
2
0.0358
0.098
3
0.0831
0.54
4
0.0129
12
Fig. 8 Transient thermal impedance
junction to
heatsink
(per
diode)
R
thJK
for various conduction angles d:
d
R
thJK
(K/W)
DC
0.179
180
0.188
120
0.196
60
0.216
30
0.254
Constants for Z
thJK
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.0066
0.00054
2
0.0358
0.098
3
0.0831
0.54
4
0.0129
12
5
0.04
12
808
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