2004 IXYS All rights reserved
1 - 3
MDD 312
423
IXYS reserves the right to change limits, test conditions and dimensions.
V
RSM
V
RRM
Type
V
DSM
V
DRM
V
V
1300
1200
MDD 312-12N1
1500
1400
MDD 312-14N1
1700
1600
MDD 312-16N1
1900
1800
MDD 312-18N1
2100
2000
MDD 312-20N1
2300
2200
MDD 312-22N1
I
FRMS
= 2x520 A
I
FAVM
= 2x310 A
V
RRM
= 1200-2200 V
Features
International standard package
Direct copper bonded Al
2
O
3
-ceramic
with copper base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered E 72873
Applications
Supplies for DC power equipment
DC supply for PWM inverter
Field supply for DC motors
Battery DC power supplies
Advantages
Simple mounting
Improved temperature and power cycling
Reduced protection circuits
Symbol
Conditions
Maximum Ratings
I
FRMS
T
VJ
= T
VJM
520
A
I
FAVM
T
C
= 100
C; 180 sine
310
A
I
FSM
T
VJ
= 45
C;
t = 10 ms (50 Hz)
10500
A
V
R
= 0
t = 8.3 ms (60 Hz)
11200
A
T
VJ
= T
VJM
t = 10 ms (50 Hz)
9200
A
V
R
= 0
t = 8.3 ms (60 Hz)
9800
A
i
2
dt
T
VJ
= 45
C
t = 10 ms (50 Hz)
551000
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz)
527000
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz)
423 000
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz)
403 000
A
2
s
T
VJ
-40...+150
C
T
VJM
150
C
T
stg
-40...+125
C
V
ISOL
50/60 Hz, RMS
t = 1 min
3000
V~
I
ISOL
1 mA
t = 1 s
3600
V~
M
d
Mounting torque (M6)
4.5-7/40-62 Nm/lb.in.
Terminal connection torque (M8)
11-13/97-115 Nm/lb.in.
Weight
Typical including screws
750
g
Symbol
Conditions
Characteristic Values
I
RRM
T
VJ
= T
VJM
; V
R
= V
RRM
30
mA
V
F
I
F
= 600 A; T
VJ
= 25
C
1.32
V
V
T0
For power-loss calculations only
0.8
V
r
T
T
VJ
= T
VJM
0.6
m
R
thJC
per diode; DC current
0.12
K/W
per module
0.06
K/W
R
thJK
per diode; DC current
0.16
K/W
per module
0.08
K/W
Q
S
T
VJ
= 125
C; I
F
= 400 A; -di/dt = 50 A/
s
700
C
I
RM
260
A
d
S
Creeping distance on surface
12.7
mm
d
A
Creepage distance in air
9.6
mm
a
Maximum allowable acceleration
50
m/s
2
High Power
Diode Modules
1
2
3
Dimensions in mm (1 mm = 0.0394")
M8x20
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
3
1
2
2004 IXYS All rights reserved
2 - 3
MDD 312
423
IXYS reserves the right to change limits, test conditions and dimensions.
0
25
50
75
100
125
150
0
100
200
300
400
500
0
100
200
300
400
500
600
0
25
50
75
100
125
150
1
10
10
5
10
6
0.001
0.01
0.1
1
0
2000
4000
6000
8000
10000
0
100
200
300
400
500
600
0
250
500
750
1000
1250
1500
1750
I
2
t
I
FAVM
I
dAVM
A
P
tot
W
T
A
T
C
s
t
ms
t
A
2
s
0
25
50
75
100
125
150
0
50
100
150
200
250
300
350
400
450
500
550
I
FSM
A
A
I
FAVM
W
P
tot
A
T
A
180 sin
120
60
30
DC
R
L
80 % V
RRM
T
VJ
= 45C
T
VJ
= 150C
50 Hz
T
VJ
= 150C
V
R
= 0 V
T
VJ
= 45C
180 sin
120
60
30
DC
0.6
0.8
0.1
0.2
0.3
0.4
R
thKA
K/W
0.06
2 x MDD312
Circuit
B2U
0.12
0.06
0.04
R
thKA
K/W
0.5
0.08
0.2
0.3
50
150
0
100
200
100
300
500
0
200
400
600
50
150
0
100
200
0
5
10
15
20
25
T
VJ
= 125C
V
R
= 600 V
T
VJ
= 125C
V
R
= 600 V
IF = 400 A
IF = 400 A
I
RM
di
F
/dt
A/s
A
t
rr
di
F
/dt
A/s
s
Fig. 1 Surge overload current
I
FSM
: Crest value, t: duration
Fig. 2 I
2
t versus time (1-10 ms)
Fig. 3
Maximum forward current
at case temperature
Fig. 4
Power dissipation vs. forward current and ambient temperature (per diode)
Fig. 6 Single phase rectifier bridge: Power dissipation vs. direct output current
and ambient temperature
R = resistive load,
L = inductive load
Fig. 5
Typ. peak reverse current
I
RM
versus -di
F
/dt
Fig. 7
Typ. recovery time t
rr
versus -di
F
/dt
2004 IXYS All rights reserved
3 - 3
MDD 312
423
IXYS reserves the right to change limits, test conditions and dimensions.
t
Z
thJK
s
t
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.00
0.05
0.10
0.15
0.20
0.25
K/W
Z
thJC
I
dAVM
P
tot
0
25
50
75
100
125
150
0
200
400
600
800
0
500
1000
1500
2000
2500
3000
A
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.00
0.05
0.10
0.15
0.20
T
A
W
K/W
s
3 x MDD312
Circuit
B6U
0.3
0.2
0.15
0.1
0.06
0.03
0.4
R
thKA
K/W
DC
180
120
60
30
DC
30
60
120
180
Fig. 8 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature
Fig. 9 Transient thermal impedance junction to case (per diode)
Fig. 10Transient thermal impedance junction to
heatsink
(per
diode)
R
thJC
for various conduction angles d:
d
R
thJC
(K/W)
DC
0.120
180
C
0.128
120
C
0.135
60
C
0.153
30
C
0.185
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.0058
0.00054
2
0.031
0.098
3
0.072
0.54
4
0.0112
12
R
thJK
for various conduction angles d:
d
R
thJK
(K/W)
DC
0.160
180
C
0.168
120
C
0.175
60
C
0.193
30
C
0.225
Constants for Z
thJK
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.0058
0.00054
2
0.031
0.098
3
0.072
0.54
4
0.0112
12
5
0.04
12
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