2000 IXYS All rights reserved
1 - 3
I
FRMS
= 2x 150 A
I
FAVM
= 2x 95 A
V
RRM
= 800-1800 V
Symbol
Test Conditions
Characteristic Values
I
R
T
VJ
= T
VJM
; V
R
= V
RRM
10
mA
V
F
I
F
= 200 A; T
VJ
= 25
C
1.48
V
V
T0
For power-loss calculations only
0.8
V
r
T
T
VJ
= T
VJM
3
m
W
Q
S
T
VJ
= 125
C; I
F
= 50 A, -di/dt = 3 A/
m
s
100
m
C
I
RM
24
A
R
thJC
per diode; DC current
0.51
K/W
per module
other values
0.255
K/W
R
thJK
per diode; DC current
see Fig. 6/7
0.71
K/W
per module
0.355
K/W
d
S
Creepage distance on surface
12.7
mm
d
A
Strike distance through air
9.6
mm
a
Maximum allowable acceleration
50
m/s
2
Features
q
International standard package
JEDEC TO-240 AA
q
Direct copper bonded Al
2
O
3
-ceramic
base plate
q
Planar passivated chips
q
Isolation voltage 3600 V~
q
UL registered, E 72873
Applications
q
Supplies for DC power equipment
q
DC supply for PWM inverter
q
Field supply for DC motors
q
Battery DC power supplies
Advantages
q
Space and weight savings
q
Simple mounting
q
Improved temperature and power
cycling
q
Reduced protection circuits
Dimensions in mm (1 mm = 0.0394")
V
RSM
V
RRM
Type
V
V
900
800
MDD 56-08N1 B
1300
1200
MDD 56-12N1 B
1500
1400
MDD 56-14N1 B
1700
1600
MDD 56-16N1 B
1900
1800
MDD 56-18N1 B
Symbol
Test Conditions
Maximum Ratings
I
FRMS
T
VJ
= T
VJM
150
A
I
FAVM
T
C
= 75
C; 180
sine
95
A
T
C
= 100
C; 180
sine
71
A
I
FSM
T
VJ
= 45
C;
t = 10 ms (50 Hz), sine
1400
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
1650
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
1200
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
1400
A
i
2
dt
T
VJ
= 45
C
t = 10 ms (50 Hz), sine
9800
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
11300
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
7200
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
8100
A
2
s
T
VJ
-40...+150
C
T
VJM
150
C
T
stg
-40...+125
C
V
ISOL
50/60 Hz, RMS
t = 1 min
3000
V~
I
ISOL
1 mA
t = 1 s
3600
V~
M
d
Mounting torque (M5)
2.5-4/22-35 Nm/lb.in.
Terminal connection torque (M5)
2.5-4/22-35 Nm/lb.in.
Weight
Typical including screws
90
g
MDD 56
TO-240 AA
1
2
3
3
1
2
Diode Modules
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
2000 IXYS All rights reserved
2 - 3
MDD 56
Fig. 1 Surge overload current
I
FSM
: Crest value, t: duration
Fig. 2
i
2
dt versus time (1-10 ms)
Fig. 2a Maximum forward current
at case temperature
Fig. 3
Power dissipation versus
forward current and ambient
temperature (per diode)
Fig. 4 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
2000 IXYS All rights reserved
3 - 3
Fig. 5 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
Fig. 6 Transient thermal impedance
junction to case (per diode)
Fig. 7 Transient thermal impedance
junction to
heatsink
(per diode)
R
thJK
for various conduction angles d:
d
R
thJK
(K/W)
DC
0.71
180
0.73
120
0.75
60
0.78
30
0.82
Constants for Z
thJK
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.013
0.0015
2
0.055
0.045
3
0.442
0.485
4
0.2
1.25
MDD 56
R
thJC
for various conduction angles d:
d
R
thJC
(K/W)
DC
0.51
180
0.53
120
0.55
60
0.58
30
0.62
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.013
0.0015
2
0.055
0.045
3
0.442
0.485
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