2000 IXYS All rights reserved
1 - 1
Single Phase
Rectifier Bridge
with Fast Recovery Epitaxial Diodes (FRED)
Symbol
Conditions
Maximum Ratings
I
dAV
T
C
= 65C, module
20
A
I
FSM
T
VJ
= 45C;
t = 10 ms (50 Hz), sine
75
A
V
R
= 0
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
65
A
V
R
= 0
I
2
dt
T
VJ
= 45C
t = 10 ms (50 Hz), sine
28
A
2
s
V
R
= 0
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
21
A
2
s
V
R
= 0
T
VJ
-40...+150
C
T
VJM
150
C
T
stg
-40...+125
C
V
ISOL
50/60 Hz,
RMS
t = 1 min
3000
V~
I
ISOL
1 mA
t = 1 s
3600
V~
M
d
Mounting torque (M5)
2 - 2.5
Nm
(10-32UNF)
18 - 22
lb.in.
Weight
typ.
35
g
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
V
RSM
V
RRM
Type
V
V
2000
2000
VBE 20-20NO1
Features
q
Package
with DCB ceramic base plate
q
Isolation voltage 3600 V~
q
Planar passivated chips
q
Leads suitable for PC board soldering
q
Creeping and creepage-distance
fulfil UL 508/CSA 22.2NO14 and
VDE 0160 requirements
q
Epoxy meets UL94V-O
q
UL listing applied for
Applications
q
Supplies for DC power equipment
q
Input rectifiers for PWM inverter
q
Output filter for PWM inverter
Advantages
q
Reduced EMI/RFI
q
Easy to mount with two screws
q
Space and weight savings
q
Improved temperature and power
cycling
Dimensions in mm (1 mm = 0.0394")
VBE 20
I
dAV
= 20 A
V
RRM
= 2000 V
t
rr
= 70 ns
Symbol
Conditions
Characteristic Values
typ.
max
I
R
V
R
= V
RRM
T
VJ
= 25C
0.75
mA
V
R
= 0.8 V
RRM
T
VJ
= 125C
4
7
mA
V
F
I
F
= 12 A
T
VJ
= 25C
5.41
V
V
T0
For power-loss calculations only
3.3
V
r
T
93
m
W
R
thJC
per diode,
DC
1.7
K/W
R
thCH
0.3
K/W
I
RM
I
F
= 12 A, -di
F
/dt = 100 A/ms
9
12
A
V
R
= 540 V, L
0.05 mH, T
VJ
= 100C
t
rr
I
F
= 1 A; -di/dt = 100 A/ms; V
R
= 30 V, T
VJ
= 25C
70
90
ns
d
S
Creeping distance on surface
12.7
mm
d
A
Creepage distance in air
9.4
mm
a
Max. allowable acceleration
50
m/s
2
1
5
10
6
5
1
10
6
030
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