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Электронный компонент: VBE60-06A

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2003 IXYS All rights reserved
1 - 2
IXYS reserves the right to change limits, Conditions and dimensions.
342
VBE 60-06A
Advanced Technical Information
Single Phase Rectifier Bridge
with Fast Recovery Epitaxial Diodes (FRED)
Features
International standard package miniBLOC
Isolation voltage 2500 V~
single Phase Rectifier Bridge with FREDs
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Applications
Supplies for DC power equipment
Input and output rectifiers for high
frequency
Battery DC power supplies
Field supply for DC motors
Advantages
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Dimensions see Outlines.pdf
Pulse test:
for resistive load at bridge output.
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300
s, Duty Cycle < 2.0 %
I
dAV
= 60 A
V
RRM
= 600 V
t
rr
= 35 ns
V
RSM
V
RRM
Type
V
V
600
600
VBE 60-06A
Symbol
Conditions
Maximum Ratings
I
FRMS
70
A
I
dAV
rect., d = 0.5; T
C
= 90C
60
A
I
FSM
T
VJ
= 45C; V
R
= 0;
250
A
I
2
t
t
p
= 10 ms (50 Hz), sine
315
A
2
s
E
AS
T
VJ
= 25C; non-repetitive
0.2
mJ
I
AS
= 1.3 A; L = 180 H
I
AR
V
A
= 1.5V
R
typ.; f = 10 kHz; repetitive
0.1
A
T
VJ
-40...+150
C
T
VJM
150
C
T
stg
-40...+150
C
P
tot
T
C
= 25C
140
W
V
ISOL
50/60 Hz, RMS
2500
V~
I
ISOL
1 mA
M
d
mounting torque (M4)
1.1-1.5/9-13
Nm/lb.in.
terminal connection torque (M4)
1.1-1.5/9-13
Nm/lb.in.
Weight
typical
30
g
Symbol
Conditions
Characteristic max. Values
I
R
V
R
= V
RRM
; T
VJ
= 25C
0.15
mA
V
R
= V
RRM
; T
VJ
= 125C
1
mA
V
F
I
F
= 30 A;
T
VJ
= 125C
1.26
V
T
VJ
= 25C
1.54
V
R
thJC
1.15
K/W
R
thCH
typ.
0.1
K/W
t
rr
I
F
= 1 A; -di/dt = 200 A/s;
typ.
35
ns
V
R
= 30 V; T
VJ
= 25C
I
RM
V
R
= 100 V; I
F
= 50 A; -di
F
/dt = 100 A/s
typ.
5.5
A
T
VJ
= 100C
+
~
~
~
miniBLOC, SOT-227 B
~
+
Data according to IEC 60747 and per diode unless otherwise specified
2003 IXYS All rights reserved
2 -2
IXYS reserves the right to change limits, Conditions and dimensions.
342
VBE 60-06A
Advanced Technical Information
200
600
1000
0
400
800
70
80
90
100
110
120
130
0.0001
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
C
-di
F
/dt
t
s
K/W
0
200
400
600
800
1000
0
5
10
15
20
0.0
0.3
0.6
0.9
1.2
V
FR
di
F
/dt
V
200
600
1000
0
400
800
0
10
20
30
40
50
100
1000
0
500
1000
1500
2000
2500
3000
0.0
0.5
1.0
1.5
2.0
0
10
20
30
40
50
60
70
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
s
A
V
nC
A/
s
A/
s
t
rr
ns
t
fr
Z
thJC
A/
s
s
DSEP 2x31-06A
I
F
= 60A
I
F
= 30A
I
F
= 15A
T
VJ
= 100C
V
R
= 300V
T
VJ
= 100C
I
F
= 30A
Fig. 3 Peak reverse current I
RM
versus -di
F
/dt
Fig. 2 Reverse recovery charge Q
r
versus -di
F
/dt
Fig. 1 Forward current I
F
versus V
F
T
VJ
= 100C
V
R
= 300V
T
VJ
= 100C
V
R
= 300V
I
F
= 60A
I
F
= 30A
I
F
= 15A
Q
r
I
RM
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
I
F
= 60A
I
F
= 30A
I
F
= 15A
t
fr
V
FR
Fig. 7 Transient thermal resistance junction to case
T
VJ
=25C
T
VJ
=100C
T
VJ
=150C
NOTE: Fig. 2 to Fig. 6 shows typical values
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.436
0.0055
2
0.482
0.0092
3
0.117
0.0007
4
0.115
0.0418