2004 IXYS All rights reserved
1 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
VBO 20
420
I
dAV
= 31 A
V
RRM
= 800-1600 V
Standard and Avalanche Types
V
RSM
V
BRmin
V
RRM
Standard
Avalanche
V
V
V
Type
Type
900
800
VBO 20-08NO2
1300
1230
1200
VBO 20-12NO2
VBO 20-12AO2
1500
1430
1400
VBO 20-14NO2
VBO 20-14AO2
1700
1630
1600
VBO 20-16NO2
VBO 20-16AO2
For Avalanche Types only
Symbol
Test Conditions
Maximum Ratings
I
dAV
T
C
= 85
C, module
31
A
I
dAVM
module
40
A
P
RSM
T
VJ
= T
VJM
t = 10
s
3.4
kW
I
FSM
T
VJ
= 45
C;
t = 10 ms (50 Hz), sine
300
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
315
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
250
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
265
A
I
2
t
T
VJ
= 45
C
t = 10 ms (50 Hz), sine
450
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
420
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
312
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
290
A
2
s
T
VJ
-40...+150
C
T
VJM
150
C
T
stg
-40...+125
C
V
ISOL
50/60 Hz, RMS
t = 1 min
3000
V~
I
ISOL
1 mA
t = 1 s
3600
V~
M
d
Mounting torque (M5)
1.5-2
Nm
(10-32 UNF)
13-18
lb.in.
Weight
typ.
15
g
Features
Avalanche rated parts available
Package with DCB ceramic base plate
Isolation voltage 3600 V~
Planar passivated chips
Low forward voltage drop
" fast-on terminals
UL registered E 72873
Applications
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors
Advantages
Easy to mount with one screw
Space and weight savings
Improved temperature and power cycling
Symbol
Test Conditions
Characteristic Values
I
R
V
R
= V
RRM
;
T
VJ
= 25
C
0.3
mA
V
R
= V
RRM
;
T
VJ
= T
VJM
5
mA
V
F
I
F
= 55 A;
T
VJ
= 25
C
1.6
V
V
T0
For power-loss calculations only
0.85
V
r
T
T
VJ
= T
VJM
14
m
R
thJC
per diode, DC current
3.0
K/W
per module
0.75
K/W
R
thJK
per diode, DC current
3.4
K/W
per module
0.85
K/W
d
S
Creeping distance on surface
13
mm
d
A
Creepage distance in air
9.5
mm
a
Max. allowable acceleration
50
m/s
2
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747 and refer to a single diode unless otherwise stated
for resistive load at bridge output,
with isolated fast-on tabs.
Single Phase
Rectifier Bridge
~
~
+
+
~
~
2004 IXYS All rights reserved
2 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
VBO 20
420
Fig. 1 Surge overload current per
diode
I
FSM
: Crest value, t: duration
Fig. 3 Max. forward current at case
temperature
Fig. 2 I
2
t versus time (1-10 ms)
per diode
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig. 5 Transient thermal impedance junction to heatsink per diode
Constants for Z
thJK
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.775
0.0788
2
1.390
0.504
3
1.255
3.701
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