2000 IXYS All rights reserved
1 - 1
V
RSM
V
RRM
Type
V
V
1200
1200
VBO 22-12NO8
1400
1400
VBO 22-14NO8
1600
1600
VBO 22-16NO8
1800
1800
VBO 22-18NO8
Symbol
Test Conditions
Maximum Ratings
I
dAV
T
C
= 85
C, module
17
A
I
dAVM
T
C
= 63
C, module
21
A
I
FSM
T
VJ
= 45
C;
t = 10 ms (50 Hz), sine
380
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
440
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
360
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
400
A
I
2
t
T
VJ
= 45
C
t = 10 ms (50 Hz), sine
725
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
800
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
650
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
650
A
2
s
T
VJ
-40...+150
C
T
VJM
150
C
T
stg
-40...+150
C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
I
ISOL
1 mA
t = 1 s
3000
V~
M
d
Mounting torque
(M5)
2
10 %
Nm
(10-32 UNF)
18
10 %
lb.in.
Weight
typ.
22
g
I
dAVM
= 21 A
V
RRM
= 1200-1800 V
Features
q
Package with " fast-on terminals
q
Isolation voltage 3000 V~
q
Planar passivated chips
q
Blocking voltage up to 1800 V
q
Low forward voltage drop
q
UL registered E 72873
Applications
q
Supplies for DC power equipment
q
Input rectifiers for PWM inverter
q
Battery DC power supplies
q
Field supply for DC motors
Advantages
q
Easy to mount with one screw
q
Space and weight savings
q
Improved temperature and power
cycling
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
Symbol
Test Conditions
Characteristic Values
I
R
T
VJ
= 25
C;
V
R
= V
RRM
0.3
mA
T
VJ
= T
VJM
;
V
R
= V
RRM
5.0
mA
V
F
I
F
= 150 A;
T
VJ
= 25
C
2.2
V
V
T0
For power-loss calculations only
0.85
V
r
T
12
m
W
R
thJC
per diode; DC current
8.2
K/W
per module
2.05
K/W
R
thJK
per diode; DC current
9.4
K/W
per module
2.35
K/W
d
S
Creeping distance on surface
12.7
mm
d
A
Creepage distance in air
9.4
mm
a
Max. allowable acceleration
50
m/s
2
Dimensions in mm (1 mm = 0.0394")
VBO 22
Single Phase
Rectifier Bridge
~
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+
~
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