2004 IXYS All rights reserved
1 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
VBO 30
420
I
dAVM
= 35 A
V
RRM
= 1200-1800 V
V
RSM
V
RRM
Type
V
V
800
800
VBO 30-08NO7
1200
1200
VBO 30-12NO7
1400
1400
VBO 30-14NO7
1600
1600
VBO 30-16NO7
1800
1800
VBO 30-18NO7*
* delivery time on request
Symbol
Conditions
Maximum Ratings
I
dAVM
T
C
= 85C, module
35
A
I
FSM
T
VJ
= 45C;
t = 10 ms (50 Hz), sine
400
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
440
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
360
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
400
A
I
2
t
T
VJ
= 45C
t = 10 ms (50 Hz), sine
800
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
810
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
650
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
670
A
2
s
T
VJ
-40...+150
C
T
VJM
150
C
T
stg
-40...+150
C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
I
ISOL
1 mA
t = 1 s
3000
V~
M
d
Mounting torque (M4)
1.5
15%
Nm
13
15% lb.in.
Terminal connection torque (M4)
1.5
15%
Nm
13
15% lb.in.
Weight
typ.
135
g
Features
Package with screw terminals
Isolation voltage 3000 V~
Planar passivated chips
Blocking voltage up to 1800 V
Low forward voltage drop
UL registered E 72873
Applications
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power cycling
Data according to IEC 60747 refer to a single diode unless otherwise stated.
Symbol
Conditions
Characteristic Values
I
R
V
R
= V
RRM
;
T
VJ
= 25C
0.3
mA
V
R
= V
RRM
;
T
VJ
= T
VJM
5.0
mA
V
F
I
F
= 150 A;
T
VJ
= 25
C
2.2
V
V
T0
For power-loss calculations only
0.85
V
r
T
T
VJ
= T
VJM
12
m
R
thJC
per diode; DC current
2.8
K/W
per module
0.7
K/W
R
thJK
per diode; DC current
3.4
K/W
per module
0.85
K/W
Dimensions in mm (1 mm = 0.0394")
Single Phase
Rectifier Bridge
~
~
+
-
+
~
~
2004 IXYS All rights reserved
2 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
VBO 30
420
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current per diode
I
FSM
: Crest value. t: duration
Fig. 3
i
2
dt versus time
(1-10ms) per diode or thyristor
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig.5 Maximum forward current
at case temperature
Fig. 6 Transient thermal impedance per diode or thyristor, calculated
1.0
1.5
2.0
2.5
3.0
0
50
100
150
200
V [V]
F
I
F
[A]
1:T = 150C
VJ
2:T = 25C
VJ
1
2
0.4
0.6
0.8
1
1.2
1.4
1.6
10
0
10
1
10
2
10
3
t[ms]
I (A)
FSM
TVJ=45C TVJ=150C
400 360
I
------
I
FSM
F(OV)
0 V
R RM
1/2 V
RRM
1 V
R RM
2
4
6
10
T VJ=45C
TVJ=1 50C
t [ms ]
1
10
10
2
3
As
2
3 0
1 0
0
2 0
4 0
6 0
8 0
50
55
60
65
70
75
80
85
90
95
100
105
110
115
120
125
130
135
140
145
150
T C
C
D C
si n .1 8 0
re c .1 2 0
r e c. 60
r e c. 30
5.57
2.23
1.12
0.57
0.29 0.01
= RTHCA [K/W]
I F AV M
[A ]
T a m b
[K ]
0
5 0
10 0
1 5 0
[W ]
P V TO T
PSB 35
50
100
150
200
0
10
20
30
40
DC
.180
.120
.60
sin
rec
rec
rec.30
T (C)
C
I
dAV
[A]
0.01
0.1
1
10
1
2
3
4
5
K/W
Z th
t[s]
Z
thJK
Z
thJC
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