2003 IXYS All rights reserved
1 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
327
Symbol
Conditions
Maximum Ratings
I
dAV
T
C
= 85C, module
23
A
I
dAVM
T
C
= 62C, module
30
A
I
FSM
T
VJ
= 45C;
t = 10 ms (50 Hz), sine
550
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
600
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
500
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
550
A
I
2
t
T
VJ
= 45C
t = 10 ms (50 Hz), sine
1520
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
1520
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
1250
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
1250
A
2
s
T
VJ
-40...+150
C
T
VJM
150
C
T
stg
-40...+150
C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
I
ISOL
1 mA
t = 1 s
3000
V~
M
d
Mounting torque
(M5)
2
10%
Nm
(10-32 UNF)
18
10%
lb.in.
Weight
typ.
22
g
I
dAVM
= 30 A
V
RRM
= 1200-1800 V
Features
Package with " fast-on terminals
Isolation voltage 3000 V~
Planar passivated chips
Blocking voltage up to 1800 V
Low forward voltage drop
UL registered E 72873
Applications
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors
Advantages
Easy to mount with one screw
Space and weight savings
Improved temperature and power cycling
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
Symbol
Conditions
Characteristic Values
I
R
T
VJ
= 25C;
V
R
= V
RRM
0.3
mA
T
VJ
= T
VJM
;
V
R
= V
RRM
2.0
mA
V
F
I
F
= 150 A;
T
VJ
= 25C
1.7
V
V
T0
For power-loss calculations only
0.8
V
r
T
5.8
m
R
thJC
per diode; DC current
6.2
K/W
per module
1.55
K/W
R
thJK
per diode; DC current
7.4
K/W
per module
1.85
K/W
d
S
Creeping distance on surface
12.7
mm
d
A
Creepage distance in air
9.4
mm
a
Max. allowable acceleration
50
m/s
2
Dimensions in mm (1 mm = 0.0394")
VBO 36
Single Phase
Rectifier Bridge
~
~
_
+
~
~
V
RSM
V
RRM
Type
V
V
1200
1200
VBO 36-12NO8
1400
1400
VBO 36-14NO8
1600
1600
VBO 36-16NO8
1800
1800
VBO 36-18NO8
2003 IXYS All rights reserved
2 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
327
VBO 36
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current per diode
I
FSM
: Crest value. t: duration
Fig.5 Maximum forward current
at case temperature
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig. 3
i
2
dt versus time
(1-10ms) per diode or thyristor
Fig. 6 Transient thermal impedance per diode or thyristor, calculated
0.5
1
1.5
2
2.5
0
50
100
150
200
V [V]
F
I
F
[A]
1:T = 150C
VJ
2:T = 25C
VJ
1
2
0.4
0.6
0.8
1
1.2
1.4
1.6
10
0
10
1
10
2
10
3
t[ms]
I (A)
FSM
TVJ=45C TVJ=150C
480 500
I
-- -- - -
I
F SM
F (O V )
0 V
RR M
1 / 2 V
R R M
1 V
RR M
2
4
6
10
TVJ=45C
TVJ=150 C
t [m s]
1
10
10
10
2
3
4
As
2
20
0
10
20
30
40
50
60
70
50
55
60
65
70
75
80
85
90
95
100
105
110
115
120
125
130
135
140
145
150
TC
C
DC
s in.180
r ec.120
rec.60
rec.30
7.14
2.86
1.43
0.71
0.36
= RTHCA [K/W]
IFAVM
[A ]
Tamb
[ K]
0
50
100
150
[W]
PV TOT
PSB 36
5 0
100
15 0
200
0
10
20
30
40
50
DC
sin.180
rec.120
rec.60
rec.30
T (C)
C
I
dAV
[A]
0.01
0.1
1
10
2
4
6
8
K/W
Zth
t[s]
Z thJK
Z thJC
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