2000 IXYS All rights reserved
1 - 2
VGO 36
Features
Package with DCB ceramic
base plate
Isolation voltage 3000 V~
Planar passivated chips
Low forward voltage drop
Leads suitable for PC board soldering
Applications
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
Small and light weight
Data according to IEC 60747 refer to a single diode/thyristor unless otherwise stated
x
for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and dimensions.
I
dAV
= 36 A
V
RRM
= 800-1600 V
Symbol
Test Conditions
Maximum Ratings
I
dAV
x
T
H
= 85C, module
36
A
I
dAVM
x
module
40
A
I
FRMS
, I
TRMS
per leg
31
A
I
FSM
, I
TSM
T
VJ
= 45C;
t = 10 ms (50 Hz), sine
320
A
V
R
= 0 V
t = 8.3 ms (60 Hz), sine
350
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
280
A
V
R
= 0 V
t = 8.3 ms (60 Hz), sine
310
A
I
2
t
T
VJ
= 45C
t = 10 ms (50 Hz), sine
500
A
2
s
V
R
= 0 V
t = 8.3 ms (60 Hz), sine
520
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
390
A
2
s
V
R
= 0 V
t = 8.3 ms (60 Hz), sine
400
A
2
s
(di/dt)
cr
T
VJ
= 125C
repetitive, I
T
= 50 A
150
A/
m
s
f = 50 Hz, t
P
= 200
m
s
V
D
= 2/3 V
DRM
I
G
= 0.3 A,
non repetitive, I
T
= 1/2 I
dAV
500
A/
m
s
di
G
/dt = 0.3 A/
m
s
(dv/dt)
cr
T
VJ
= T
VJM
; V
DR
= 2/3 V
DRM
1000
V/
m
s
R
GK
=
; method 1 (linear voltage rise)
V
RGM
10
V
P
GM
T
VJ
= T
VJM
t
p
=
30
m
s
10
W
I
T
= I
TAVM
t
p
= 500
m
s
5
W
t
p
=
10 ms
1
W
P
GAVM
0.5
W
T
VJ
-40...+125
C
T
VJM
125
C
T
stg
-40...+125
C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
I
ISOL
1 mA
t = 1 s
3000
V~
M
d
Mounting torque (M4)
1.5 - 2
Nm
14 - 18
lb.in.
Weight
typ.
18
g
Single Phase Rectifier Bridge
V
RSM
V
RRM
Type
V
DSM
V
DRM
V
V
900
800
VGO 36-08io7
1300
1200
VGO 36-12io7
1500
1400
VGO 36-14io7
1700
1600
VGO 36-16io7
H
N
K
D
G
A
002
Preliminary data
2000 IXYS All rights reserved
2 - 2
Dimensions in mm (1 mm = 0.0394")
Symbol
Test Conditions
Characteristic Values
I
R
, I
D
V
R
= V
RRM
; V
D
= V
DRM
T
VJ
= T
VJM
5
mA
T
VJ
= 25
C
0.3
mA
V
T
, V
F
I
T
, I
F
= 45 A; T
VJ
= 25
C
1.45
V
V
T0
For power-loss calculations only (T
VJ
= 125
C)
0.85
V
r
T
13
m
W
V
GT
V
D
= 6 V;
T
VJ
= 25
C
1.0
V
T
VJ
= -40
C
1.2
V
I
GT
V
D
= 6 V;
T
VJ
= 25
C
65
mA
T
VJ
= -40
C
80
mA
T
VJ
= 125
C
50
mA
V
GD
T
VJ
= T
VJM
;
V
D
= 2/3 V
DRM
0.2
V
I
GD
T
VJ
= T
VJM
;
V
D
= 2/3 V
DRM
5
mA
I
L
I
G
= 0.3 A; t
G
= 30
m
s;
T
VJ
= 25
C
150
mA
di
G
/dt = 0.3 A/
m
s;
T
VJ
= -40
C
200
mA
T
VJ
= 125
C
100
mA
I
H
T
VJ
= 25
C; V
D
= 6 V; R
GK
=
100
mA
t
gd
T
VJ
= 25
C; V
D
= 1/2 V
DRM
2
m
s
I
G
= 0.3 A; di
G
/dt = 0.3 A/
m
s
t
q
T
VJ
= 125
C, I
T
= 15 A, t
P
= 300
m
s, V
R
= 100 V
typ.
150
m
s
di/dt = -10 A/
m
s, dv/dt = 20 V/
m
s, V
D
= 2/3 V
DRM
R
thJC
per thyristor (diode); DC current
1.4
K/W
per module
0.35
K/W
R
thJK
per thyristor (diode); DC current
2.0
K/W
per module
0.5
K/W
d
S
Creepage distance on surface
12.6
mm
d
A
Creepage distance in air
6.3
mm
a
Max. allowable acceleration
50
m/s
2
Fig. 1 Gate trigger range
Fig. 2 Gate controlled delay time t
gd
1
10
100
1000
0.1
1
10
I
G
V
G
mA
1: I
GT
, T
VJ
= 125C
2: I
GT
, T
VJ
= 25C
3: I
GT
, T
VJ
= -40C
V
4: P
GAV
= 0.5 W
5: P
GM
= 1 W
6: P
GM
= 10 W
I
GD
, T
VJ
= 125C
4
2
1
5
6
10
100
1000
1
10
100
1000
s
t
gd
T
VJ
= 25C
typ.
Limit
mA
I
G
3
VGO 36
002
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