2000 IXYS All rights reserved
1 - 2
I
dAVM
= 20 A
V
RRM
= 800-1800 V
Symbol
Test Conditions
Characteristic Values
I
R
V
R
= V
RRM
T
VJ
= 25
C
0.3
mA
V
R
= V
RRM
T
VJ
= T
VJM
5
mA
V
F
I
F
= 7 A;
T
VJ
= 25
C
1.15
V
V
T0
For power-loss calculations only
0.8
V
r
T
50
m
W
R
thJH
per diode,
120
rect.
4.5
K/W
per module,
120
rect.
0.75
K/W
d
S
Creeping distance on surface
12.7
mm
d
A
Creepage distance in air
9.4
mm
a
Max. allowable acceleration
50
m/s
2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
Symbol
Test Conditions
Maximum Ratings
I
dAV
T
K
= 90
C, module
15
A
I
dAV
T
A
= 45
C (R
thKA
= 0.5 K/W), module
20
A
I
dAVM
module
20
A
I
FSM
T
VJ
= 45
C;
t = 10 ms (50 Hz), sine
100
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
106
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
85
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
90
A
I
2
t
T
VJ
= 45
C
t = 10 ms (50 Hz), sine
50
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
47
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
36
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
33
A
2
s
T
VJ
-40...+130
C
T
VJM
130
C
T
stg
-40...+125
C
V
ISOL
50/60 Hz, RMS
t = 1 min
3000
V~
I
ISOL
1 mA
t = 1 s
3600
V~
M
d
Mounting torque (M5)
2 - 2.5
Nm
(10-32UNF)
18-22
lb.in.
Weight
typ.
35
g
Features
q
Package with DCB ceramic base plate
q
Isolation voltage 3600 V~
q
Planar passivated chips
q
Blocking voltage up to 1800 V
q
Low forward voltage drop
q
Leads suitable for PC board soldering
q
UL registered E72873
Applications
q
Supplies for DC power equipment
q
Input rectifiers for PWM inverter
q
Battery DC power supplies
q
Field supply for DC motors
Advantages
q
Easy to mount with two screws
q
Space and weight savings
q
Improved temperature and power
cycling
Dimensions in mm (1 mm = 0.0394")
V
RSM
V
RRM
Type
V
V
900
800
VUO 16-08NO1
1300
1200
VUO 16-12NO1
1500
1400
VUO 16-14NO1
1700
1600
VUO 16-16NO1
1900
1800
VUO 16-18NO1
VUO 16
Three Phase
Rectifier Bridge
1 2
4 5
6
10
8
10
8
6
4/5
1/2
2000 IXYS All rights reserved
2 - 2
VUO 16
T
K
I
2
d
t
A
I
dAVM
I
dAVM
t
A
2
s
ms
s
I
FSM
A
V
F
V
I
F
t
s
t
0.0
0.5
1.0
1.5
2.0
2.5
0
5
10
15
20
25
30
10
-3
10
-2
10
-1
10
0
0
20
40
60
80
100
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
1
2
3
4
5
A
1
10
10
100
0
25
50
75
100
125
150
0
5
10
15
20
25
0
10
20
30
40
50
60
70
80
0
25
50
75
100
125
150
0
5
10
15
20
25
T
VJ
= 130C
T
VJ
= 25C
max.
typ.
0.8 x V
RRM
50 Hz
T
VJ
= 45C
T
VJ
= 130C
W
P
tot
T
A
6
0.5
1
1.5
2
3
4
R
thKA
K/W
C
Zth
JK
Zth
JK
K/W
C
A
T
VJ
= 45C
T
VJ
= 130C
Fig. 2 Surge overload current per diode
I
FSM
: Crest value. t:duration
Fig. 3 I
2
t versus time (1-10 ms)
per diode
Fig. 1 Forward current versus voltage
drop per diode
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig. 5 Maximum forward current at
heatsink temperature T
K
Fig. 6 Transient thermal impedance junction to heatsink per diode
Constants for Z
thJK
calculation:
i
R
th
(K/W)
t
i
(s)
1
0.015
0.008
2
0.1
0.02
3
1.835
0.05
4
2.55
0.4
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