2003 IXYS All rights reserved
1 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
VTO 39
VVZ 39
V
RSM
V
RRM
Type
V
DSM
V
DRM
V
V
700 600 VTO 39-06ho7
900 800 VTO 39-08ho7 VVZ 39-08ho7
1300 1200 VTO 39-12ho7 VVZ 39-12ho7
Three Phase Rectifier Bridge
I
dAV
= 39 A
V
RRM
= 600-1200 V
Features
Package with DCB ceramic
base plate
Isolation voltage 3000 V~
Planar passivated chips
Low forward voltage drop
Leads suitable for PC board soldering
Applications
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
Small and light weight
Data according to IEC 60747 refer to a single diode/thyristor unless otherwise stated.
for resistive load at bridge output.
Symbol
Conditions
Maximum Ratings
I
dAV
T
C
= 85C, module
39
A
I
TAVM
T
C
= 85
C; (180
sine ; per thyristor)
16
A
I
TSM
T
VJ
= 45
C;
t = 10 ms (50 Hz), sine
200
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
210
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
180
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
190
A
I
2
t
T
VJ
= 45
C
t = 10 ms (50 Hz), sine
200
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
150
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
160
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
150
A
2
s
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 20 A
100
A/s
f = 50Hz, t
P
= 200s
V
D
=
2
/
3
V
DRM
I
G
= 0.15 A
non repetitive, I
T
= I
TAVM
500
A/s
di
G
/dt = 0.15 A/s
(dv/dt)
cr
T
VJ
= T
VJM
;
V
DR
=
2
/
3
V
DRM
500
V/s
R
GK
=
; method 1 (linear voltage rise)
V
RGM
10
V
P
GM
T
VJ
= T
VJM
t
p
=
30 s
5
W
I
T
= I
TAVM
t
p
= 300 s
2.5
W
P
GAVM
0.5
W
T
VJ
-40...+125
C
T
VJM
125
C
T
stg
-40...+125
C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
I
ISOL
1 mA
t = 1 s
3000
V~
M
d
Mounting torque (M4)
1.5 - 2
Nm
14 - 18
lb.in.
Weight
typ.
18
g
Priliminary data
321
E72873
F
A
H
J M
B E G
N
L
I
F
A
H
J
M
N
L
I
VVZ 39
VTO 39
Pin arrangement see outlines
2003 IXYS All rights reserved
2 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
Dimensions in mm (1 mm = 0.0394")
Symbol
Conditions
Characteristic Values
I
D
, I
R
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
5
mA
V
T
I
T
= 20 A; T
VJ
= 25C
1.6
V
V
T0
For power-loss calculations only (T
VJ
= 125C)
0.85
V
r
T
27
m
V
GT
V
D
= 6 V;
T
VJ
= 25C
1.5
V
T
VJ
= -40C
2.5
V
I
GT
V
D
= 6 V;
T
VJ
= 25C
25
mA
T
VJ
= -40C
50
mA
V
GD
T
VJ
= T
VJM
;
V
D
=
2
/
3
V
DRM
0.2
V
I
GD
3
mA
I
L
T
VJ
= 25C; t
P
= 10 s
75
mA
I
G
= 0.1 A; di
G
/dt = 0.1 A/s
I
H
T
VJ
= 25C; V
D
= 6 V; R
GK
=
50
mA
t
gd
T
VJ
= 25C; V
D
= V
DRM
2
s
I
G
= 0.1 A; di
G
/dt = 0.1 A/s
R
thJC
per thyristor; DC
1.3
K/W
per module
0.22
K/W
R
thJH
per thyristor; DC
1.8
K/W
per module
0.3
K/W
d
S
Creeping distance on surface
11.2
mm
d
A
Creepage distance in air
5
mm
a
Max. allowable acceleration
50
m/s
2
321
VTO 39
VVZ 39
VTO 39
VVZ 39
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