JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SA821
TRANSISTOR (PNP)
FEATURES
Power dissipation
P
CM
: 0.25 W
Tamb=25
Collector current
I
CM
: -0.03 A
Collector-base voltage
V
(BR)CBO
: -210 V
Operating and storage junction temperature range
T
J
T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic= -50
A
I
E
=0
-210
V
Collector-emitter breakdown voltage
V(BR)
CEO
I
C
= -0.1 mA , I
B
=0
-210
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= -50
A
I
C
=0
-5
V
Collector cut-off current
I
CBO
V
CB
=-150V, I
E
=0
-1
A
Emitter cut-off current
I
EBO
V
EB
= -4.5 V , I
C
=0
-1
A
DC current gain
h
FE
V
CE
=-3 V, I
C
= -5mA
56
270
Collector-emitter saturation voltage
V
CEsat
I
C
= -2mA, I
B
= -0.2mA
-0.6
V
Transition frequency
f
T
V
CE
=-5V, I
C
= -2mA
30
MHz
Output capacitance
C
ob
V
CE
=-10V,I
E
=0,f=1MHz
12
pF
CLASSIFICATION OF
h
FE
Rank
N
P
Q
Range
56-120
82-180
120-270
1
2
3
TO
--
92
1.EMITTER
2. COLLECTOR
3. BASE
D
b
E
A
A
1
C
L
D1
e
e1
TO-92 PACKAGE OUTLINE DIMENSIONS
Symbol
A
A1
b
c
D
D1
E
e
e1
L
Min
3.300
1.100
0.380
0.360
4.400
3.430
4.300
2.440
14.100
0.000
Max
3.700
1.400
0.550
0.510
4.700
4.700
2.640
14.500
1.600
0.380
Min
0.130
0.043
0.015
0.014
0.173
0.135
0.169
0.096
0.555
0.000
Max
0.146
0.055
0.022
0.020
0.185
0.185
0.104
0.571
0.063
0.015
Dimensions In Millimeters
Dimensions In Inches
0.050TYP
1.270TYP
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