1
.
9
0
.
9
5
0
.
9
5
2
.
9
0
.
4
1. 3
2. 4
1
.
0
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SC3052
TRANSISTOR (NPN)
FEATURES
Power dissipation
P
CM
: 0.15 W (Tamb=25
)
Collector current
I
CM:
0.2 A
Collector-base voltage
V
(BR) CBO
: 50 V
Operating and storage junction temperature range
T
J
, T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V
(BR) CBO
I
C
= 100
A, I
E
=0
50 V
Collector-emitter breakdown voltage
V
(BR) CEO
I
C
= 100
A, I
B
=0
50 V
Emitter-base breakdown voltage
V
(BR) EBO
I
E
= 100
A, I
C
=0
6 V
Collector cut-off current
I
CBO
V
CB
= 50 V , I
E
=0
0.1
A
Emitter cut-off current
I
EBO
V
EB
= 6V , I
C
=0
0.1
A
h
FE(1)
V
CE
= 6V, I
C
= 1mA
150
800
DC current gain
h
FE(2)
V
CE
= 6V, I
C
= 0.1mA
50
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=100mA, I
B
= 10mA
0.3
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
= 100mA, I
B
= 10mA
1
V
Transition frequency
f
T
V
CE
= 6V, I
C
= 10mA
180 MHz
Collector output capacitance
C
ob
V
CE
=6V, I
E
=0, f=1MHz
4
pF
Noise figure
NF
V
CE
=6V,I
E
=-0.1mA, f=1KHz, R
G
=2K
15 dB
CLASSIFICATION OF h
FE(1)
Rank
E F G
Range
150~300 250~500 400~800
Marking
LE LF LG
Unit: mm
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
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