JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89 Plastic-Encapsulate Transistors
2SD2150
TRANSISTOR NPN
FEATURES
Power dissipation
P
CM
: 0.5 W Tamb=25
Collector current
I
CM
: 3 A
Collector-base voltage
V
(BR)CBO
: 40 V
Operating and storage junction temperature range
T
J
T
stg
: -55 to +150
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter
Symbol Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic=
50
A,I
E
=0
40
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic=
1
mA,I
B
=0
20
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=
50
A,I
C
=0
6
V
Collector cut-off current
I
CBO
V
CB
=
30
V,I
E
=0
0.1
A
Emitter cut-off current
I
EBO
V
EB
=
5
V,I
C
=0
0.1
A
DC current gain
h
FE(1)
V
CE
=
2
V,I
C
=
0.1
A
180
560
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
2
A,I
B
=100mA
0.5
V
Transition frequency
f
T
V
CE
=
2
V,I
C
=0.5A ,f=
100
MHz
290
MHz
Collector output capacitance
C
ob
V
CB
=
10
V,I
E
=0,f=
1
MHz
25
pF
CLASSIFICATION OF h
FE(1)
Rank
Q R S
Range
120-270 180-390 270-560
Marking
CFQ CFR CFS
SOT-89
1.
BASE
2.
COLLECTOR
3.
EMITTER
1
2
3
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