JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
3DD13003
TRANSISTOR ( NPN )
FEATURES
power switching applications
MAXIMUM RATINGS* T
A
=25 unless otherwise noted
Symbol
Parameter Value
Units
V
CBO
Collector-Base Voltage
700 V
V
CEO
Collector-Emitter Voltage
400
V
V
EBO
Emitter-Base Voltage
9
V
I
C
Collector Current -Continuous
1.5
A
P
C
Collector Dissipation
2
W
T
J
, T
stg
Junction and Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic= 1000uA, I
E
=0 700
V
Collector-emitter breakdown voltage
V(BR)
CEO
Ic= 10 mA, I
B
=0 400
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= 1mA, I
C
=0 9
V
Collector cut-off current
I
CBO
V
CB
= 700V , I
E
=0
1000
A
Collector cut-off current
I
CEO
V
CE
= 400V,
B
=0
500
A
Emitter cut-off current
I
EBO
V
EB
= 9 V, I
C
=0
1000
A
h
FE
1
V
CE
= 5 V, I
C
= 0.5 A
8
40
DC current gain
h
FE
2
V
CE
= 5 V, I
C
= 1.5A
5
Collector-emitter saturation voltage
V
CE
(sat) I
C
=1000mA,I
B
= 250 mA
1
V
Base-emitter saturation voltage
V
BE
(sat) I
C
=1000mA, I
B
= 250mA
1.2
V
Base-emitter voltage
V
BE
I
E
= 2000 mA
3
V
Transition frequency
f
T
V
CE
=10V,Ic=100mA
f =1MHz
5
MHz
Fall time
t
f
0.5
s
Storage time
t
s
I
C
=1A, I
B1
=-I
B2
=0.2A
V
CC
=100V
2.5
s
CLASSIFICATION OF
h
FE
(1)
Rank
Range
8-10 10-15 15-20 20-25 25-30 30-35 35-40
1 2 3
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
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