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Электронный компонент: 8550S-TO-92

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors


8550S
TRANSISTOR
PNP
FEATURE
Power dissipation
P
CM
: 0.625 W
Tamb=25
Collector current
I
CM
: -0.5 A
Collector-base voltage
V
(BR)CBO
: -40 V
Operating and storage junction temperature range
T
J
T
stg
: -55
to +150

ELECTRICAL CHARACTERISTICS
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic= -100
, I
E
=0
-40
V
Collector-emitter breakdown voltage
V(BR)
CEO
Ic= -0.1 mA
I
B
=0
-25
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= -100
A
I
C
=0
-5
V
Collector cut-off current
I
CBO
V
CB
= -40 V , I
E
=0
-0.1
A
Collector cut-off current
I
CEO
V
CE
= -20 V , I
B
=0
-0.1
A
Emitter cut-off current
I
EBO
V
EB
= - 3 V
I
C
=0
-0.1
A
h
FE
1
V
CE
= -1 V, I
C
= -50mA
85
300
DC current gain
h
FE
2
V
CE
= -1 V, I
C
= -500mA
50
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=-500mA, I
B
=-50 mA
-0.6
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
=-500mA, I
B
=-50 mA
-1.2
V
Transition frequency
f
T
V
CE
=- 6 V, I
C
=-20mA
f =
30MHz
150
MHz

CLASSIFICATION OF h
FE
(1)
Rank
B
C
D
Range
85-160
120-200
160-300

1
2
3

TO
--
92
1.EMITTER
2. COLLECTOR
3.BASE
D
b
E
A
A
1
C
L
D1
e
e1
TO-92 PACKAGE OUTLINE DIMENSIONS
Symbol
A
A1
b
c
D
D1
E
e
e1
L
Min
3.300
1.100
0.380
0.360
4.400
3.430
4.300
2.440
14.100
0.000
Max
3.700
1.400
0.550
0.510
4.700
4.700
2.640
14.500
1.600
0.380
Min
0.130
0.043
0.015
0.014
0.173
0.135
0.169
0.096
0.555
0.000
Max
0.146
0.055
0.022
0.020
0.185
0.185
0.104
0.571
0.063
0.015
Dimensions In Millimeters
Dimensions In Inches
0.050TYP
1.270TYP