JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
A42
TRANSISTOR
NPN
FEATURES
Power dissipation
P
CM
: 0.625 W
Tamb=25
Collector current
I
CM
: 0.5 A
Collector-base voltage
V
(BR)CBO
: 300 V
Operating and storage junction temperature range
T
J
T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic= 100
A
I
E
=0
300
V
Collector-emitter breakdown voltage
V(BR)
CEO
Ic= 1 mA
I
B
=0
300
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= 100
A
I
C
=0
5
V
Collector cut-off current
I
CBO
V
CB
= 200 V I
E
=0
0.25
A
Emitter cut-off current
I
EBO
V
EB
= 5 V
I
C
=0
0.1
A
h
FE
1
V
CE
= 10 V, I
C
= 1 mA
60
h
FE
2
V
CE
= 10V, IC
= 10 mA
80
250
DC current gain
H
FE
3
V
CE
= 10 V, I
C
=30 mA
75
Collector-emitter saturation voltage
V
CE
(sat)
I
C
= 20 mA, I
B
= 2 mA
0.2
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
= 20mA, I
B
= 2 mA
0.9
V
Transition frequency
f
T
V
CE
=20 V, I
C
= 10 mA
f =
30MHz
50
MHz
CLASSIFICATION OF h
FE(2)
Rank
A
B
1
B
2
C
Range
80-100
100-150
150-200
200-250
1
2
3
TO
--
92
1.EMITTER
2.BASE
3.COLLECTOR
D
b
E
A
A
1
C
L
D1
e
e1
TO-92 PACKAGE OUTLINE DIMENSIONS
Symbol
A
A1
b
c
D
D1
E
e
e1
L
Min
3.300
1.100
0.380
0.360
4.400
3.430
4.300
2.440
14.100
0.000
Max
3.700
1.400
0.550
0.510
4.700
4.700
2.640
14.500
1.600
0.380
Min
0.130
0.043
0.015
0.014
0.173
0.135
0.169
0.096
0.555
0.000
Max
0.146
0.055
0.022
0.020
0.185
0.185
0.104
0.571
0.063
0.015
Dimensions In Millimeters
Dimensions In Inches
0.050TYP
1.270TYP
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