JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
A94
TRANSISTOR
PNP
FEATURES
Power dissipation
P
CM
: 0.625 W
Tamb=25
Collector current
I
CM:
-0.2 A
Collector-base voltage
V
(BR)CBO
: -400 V
Operating and storage junction temperature range
T
J
T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V (BR)
CBO
Ic= -100
A
I
E
=0
-400
V
Collector-emitter breakdown voltage
V (BR)
CEO
I
C
= -1 mA
I
B
=0
-400
V
Emitter-base breakdown voltage
V (BR)
EBO
I
E
=-100
A
I
C
=0
-5
V
Collector cut-off current
I
CBO
V
CB
=-400 V, I
E
=0
-0.1
A
Collector cut-off current
I
CEO
V
CE
=-400 V, I
B
=0
-5
A
Emitter cut-off current
I
EBO
V
EB
= -4 V, I
C
=0
-0.1
A
h
FE
1
V
CE
=-10V, I
C
=-10 mA
80
300
h
FE
2
V
CE
=-10V, I
C
=-1mA
70
DC current gain
h
FE
3
V
CE
=-10V, I
C
=-100 mA
60
V
CE
(sat)
I
C
=-10 mA
I
B
=-1mA
-0.2
V
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=-50 mA
I
B
=-5mA
-0.3
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
=-10 mA
I
B
= -1 mA
-0.75
V
Transition frequency
f
T
V
CE
=-20V
I
C
=-10mA
f =30MHz
50
MHz
1
2
3
TO
--
92
1.EMITTER
2.BASE
3. COLLECTOR
D
b
E
A
A
1
C
L
D1
e
e1
TO-92 PACKAGE OUTLINE DIMENSIONS
Symbol
A
A1
b
c
D
D1
E
e
e1
L
Min
3.300
1.100
0.380
0.360
4.400
3.430
4.300
2.440
14.100
0.000
Max
3.700
1.400
0.550
0.510
4.700
4.700
2.640
14.500
1.600
0.380
Min
0.130
0.043
0.015
0.014
0.173
0.135
0.169
0.096
0.555
0.000
Max
0.146
0.055
0.022
0.020
0.185
0.185
0.104
0.571
0.063
0.015
Dimensions In Millimeters
Dimensions In Inches
0.050TYP
1.270TYP
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