2.70
3.70
0
.
5
5
1
.
0
5
1
.
6
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diode
B5819WS
SCHOTTKY BARRIER DIODE
FEATURES
Power dissipation
P
D:
200 mW (Tamb=25
)
Collector current
I
F
: 1 A
Collector-base voltage
V
R
: 40 V
Operating and storage junction temperature range
T
J
, T
stg
: -55
to +150
MARKING: SL
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Reverse breakdown voltage
V
(BR)
I
R
= 1mA
40
V
Reverse voltage leakage current
I
R
V
R
=40V
V
R
=4V
V
R
=6V
1
0.05
0.075
mA
Forward voltage
V
F
I
F
=0.1A
I
F
=1A
I
F
=3A
0.45
0.6
0.9
V
Diode capacitance
C
D
V
R
=4V, f=1MHz
120
pF
SOD-323
+
-
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