JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89 Plastic-Encapsulate Transistors
B772
TRANSISTOR (PNP)
FEATURES
Power dissipation
P
CM:
500 mW (Tamb=25
)
Collector current
I
CM:
-3 A
Collector-base voltage
V
(BR)CBO:
-40 V
Operating and storage junction temperature range
T
J
, T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
CLASSIFICATION OF h
FE(1)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic=-100A , I
E
=0
-40 V
Collector-emitter breakdown voltage
V(BR)
CEO
I
C
= -10 mA , I
B
=0 -30 V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= -100 A, I
C
=0 -6 V
Collector cut-off current
I
CBO
V
CB
= -40 V, I
E
=0 -1
A
Collector cut-off current
I
CEO
V
CE
=-30 V, I
B
=0
-10
A
Emitter cut-off current
I
EBO
V
EB
=-6V, I
C
=0
-1
A
h
FE(1)
V
CE
= -2V, I
C
=
-1A 60 400
DC current gain
h
FE(2)
V
CE
=-2V, I
C
= -100mA
32
Collector-emitter saturation voltage
V
CE
(sat) I
C
=-2A, I
B
= -0.2A
-0.5
V
Base-emitter saturation voltage
V
BE
(sat) I
C
=-2A, I
B
= -0.2A
-1.5
V
Transition frequency
f
T
V
CE
= -5V,
C
=-0.1A
f =
10MHz
50 MHz
CLASSIFICATION OF h
FE
(1)
Rank
R
O
Y
GR
Range
60-120 100-200 160-320 200-400
SOT-89
1.
BASE
2.
COLLETOR
3.
EMITTER
1
2
3
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