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Электронный компонент: BAS70WS

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diode
2.65
1.70
1
.
3
0
0
.
3
0
1
.
0
0









SOD-323
Maximum Ratings and Electrical Characteristics, Single Diode
@ T
A
= 25C unless otherwise specified
Characteristic
Symbol
BAS70
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
70
V
RMS Reverse Voltage
V
R(RMS)
49
V
Forward Continuous Current (Note 1)
I
F
70
mA
Non-Repetitive Peak Forward Surge Current
@ t
p
< 1.0s I
FSM
100 mA
Power Dissipation (Note 1)
P
d
200
mW
Thermal Resistance Junction to Ambient Air (Note 1)
R
qJA
625
K/W
Operating Junction Temperature Range
T
j
-55 to +125
C
Storage Temperature Range
T
STG
-65 to +150
C
Characteristic
Symbol
Min
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 2) V
(BR)R
Forward Voltage
V
F
--
410
1000
mV
t
p
<300s, I
F
= 1.0mA
t
p
<300s, I
F
= 15mA
Peak Reverse Current I
RM
100 nA t
p
< 300s, V
R
= 50V
Junction Capacitance
C
j
2.0
pF
V
R
= 0V, f = 1.0MHz
Reverse Recovery Time
t
rr
--
5.0
ns
I
F
= I
R
= 10mA to I
R
= 1.0mA,
R
L
=100
W
Electrical Ratings
@ T
A
= 25C unless otherwise specified
Low Turn-on Voltage
Fast Switching
PN Junction Guard Ring for Transient and
ESD Protection
Notes:
1. Valid Provided that terminals are kept at ambient temperature.
2. Test period <3000
ms.
Marking:
BAS70WS
SCHOTTKY DIODE
1 /1
Unit:mm
BAS70WS:K73
Features
70
V
IR=10uA
SOD-323 PACKAGE OUTLINE DIMENSIONS
Symbol
A
A1
A2
b
c
D
E
E1
L
L1
Min
1.050
0.000
1.050
0.200
0.080
1.200
1.600
2.500
0.250
0
Max
1.250
0.100
1.150
0.400
0.150
1.400
1.800
2.800
0.450
8
Min
0.041
0.000
0.041
0.008
0.003
0.047
0.063
0.098
0.010
0
Max
0.049
0.004
0.045
0.016
0.006
0.055
0.071
0.110
0.018
8
Dimensions In Millimeters
Dimensions In Inches
0.019REF
0.475REF
c
b
D
0
.
2
0
E
A1
A2
A
E1
L
L1