JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Diodes
BAV199DW
Multi-Chip DIODES
FEATURES
Power dissipation
P
CM:
0.2 W (Tamb=25
)
Collector current
I
F
: 200 mA
Collector-base voltage
V
R
: 85 V
Operating and storage junction temperature range
T
J
,T
stg
: -55
to +150
MARKING:K52
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Reverse breakdown voltage
V
(BR) R
I
R
= 100A
85
V
Reverse voltage leakage current
I
R
V
R
=75V
5 nA
Forward voltage
V
F
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
0.9
1.0
1.1
1.25
V
Junction capacitance
C
j
V
R
=0V f=1MHz
2
pF
Reveres recovery time
t
rr
I
F
=I
R
=10mA
I
rr
=0.1I
R
R
L
=100
3 nS
SOT-363
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